相关论文: Architectural Techniques for Improving NAND Flash …
Compared to planar (i.e., two-dimensional) NAND flash memory, 3D NAND flash memory uses a new flash cell design, and vertically stacks dozens of silicon layers in a single chip. This allows 3D NAND flash memory to increase storage density…
NAND flash memory is ubiquitous in everyday life today because its capacity has continuously increased and cost has continuously decreased over decades. This positive growth is a result of two key trends: (1) effective process technology…
NAND flash memory is ubiquitous in everyday life today because its capacity has continuously increased and cost has continuously decreased over decades. This positive growth is a result of two key trends: (1) effective process technology…
This paper summarizes our work on experimentally characterizing, mitigating, and recovering read disturb errors in multi-level cell (MLC) NAND flash memory, which was published in DSN 2015, and examines the work's significance and future…
This paper summarizes our work on experimentally characterizing, mitigating, and recovering data retention errors in multi-level cell (MLC) NAND flash memory, which was published in HPCA 2015, and examines the work's significance and future…
Prices of NAND flash memories are falling drastically due to market growth and fabrication process mastering while research efforts from a technological point of view in terms of endurance and density are very active. NAND flash memories…
This paper summarizes our work on experimentally analyzing, exploiting, and addressing vulnerabilities in multi-level cell NAND flash memory programming, which was published in the industrial session of HPCA 2017, and examines the work's…
Semiconductor NAND Flash based memory technology dominates the electronic Non-Volatile storage media market. Though NAND Flash offers superior performance and reliability over conventional magnetic HDDs, yet it suffers from certain…
3D NAND flash memory with advanced multi-level cell techniques provides high storage density, but suffers from significant performance degradation due to a large number of read-retry operations. Although the read-retry mechanism is…
3D NAND flash memory with advanced multi-level cell techniques provides high storage density, but suffers from significant performance degradation due to a large number of read-retry operations. Although the read-retry mechanism is…
Over the past two decades, the storage capacity and access bandwidth of main memory have improved tremendously, by 128x and 20x, respectively. These improvements are mainly due to the continuous technology scaling of DRAM (dynamic…
Recommendation system has gained a large popularity for a variety of personalized suggestion tasks, but the ever-increasing number of user data makes real-time processing of recommendation systems difficult. NAND flash memory-based…
This article features extended summaries and retrospectives of some of the recent research done by our group, SAFARI, on (1) understanding, characterizing, and modeling various critical properties of modern DRAM and NAND flash memory, the…
This paper summarizes our work on characterizing application memory error vulnerability to optimize datacenter cost via Heterogeneous-Reliability Memory (HRM), which was published in DSN 2014, and examines the work's significance and future…
With the ever-increasing amount of data generate in the world, estimated to reach over 200 Zettabytes by 2025, pressure on efficient data storage systems is intensifying. The shift from HDD to flash-based SSD provides one of the most…
This paper presents a set of models dedicated to describe a flash storage subsystem structure, functions, performance and power consumption behaviors. These models cover a large range of today's NAND flash memory applications. They are…
The current flash memory technology focuses on the cost minimization of its static storage capacity. However, the resulting approach supports a relatively small number of program-erase cycles. This technology is effective for consumer…
Although NAND flash memory has achieved continuous capacity improvements via advanced 3D stacking and multi-level cell technologies, these innovations introduce new reliability challenges, particularly lateral charge spreading (LCS), absent…
Due to increasing cache sizes and large leakage consumption of SRAM device, conventional SRAM caches contribute significantly to the processor power consumption. Recently researchers have used non-volatile memory devices to design caches,…
We present a behavioral compact model of 3D NAND flash memory for integrated circuits and system-level applications. This model is easy to implement, computationally efficient, fast, accurate and effectively accounts for the different…