相关论文: Electrical switching of perpendicular magnetizatio…
We suggest coherent switching of canted antiferromagnetic (AFM) spins using spin-orbit torque (SOT) in small magnet. The magnetic system of orthoferrite features biaxial easy anisotropy and the Dzyaloshinskii Moriya interaction, which is…
Heavy metal/ferromagnetic layers with perpendicular magnetic anisotropy (PMA) have potential applications for high-density information storage in racetrack memories and nonvolatile magnetic random access memories. Writing and erasing of…
In this study, we investigate the spin-charge current conversion characteristics of chemically disordered ferromagnetic single FePt thin films by spin-pumping ferromagnetic resonance experiments performed on both a resonance cavity and on…
Spin-transfer-torque, a transfer of angular momentum between the electron spin and the local magnetic moments, is a promising and key mechanism to control ferromagnetic materials in modern spintronic devices . However, much less attention…
Spin transfer torque (STT) driven by a charge current plays a key role in magnetization switching in heavy-metal/ferromagnetic-metal structures. The STT efficiency defined by the ratio between the effective field due to STT and the current…
The magnetic Gilbert damping and spin-orbital to charge interconversion phenomenon play vital role in controlling the modern spintronics device performances. Though the ferromagnets (FMs) and heavy metals (HMs) are considered to be the key…
Spin-orbit torques (SOT) allow the electrical control of magnetic states. Current-induced SOT switching of the perpendicular magnetization is of particular technological importance. The SOT consists of damping-like and field-like torques so…
Spin-orbit torque (SOT) magnetoresistance (MR) devices have attracted attention for use in next-generation MR devices. The SOT devices are known to exhibit different write properties based on the relative angle between the magnetization…
We study deterministic magnetic reversal of a perpendicularly magnetized Co layer in a Co/MgO/Ta nano-square driven by spin Hall torque from an in-plane current flowing in an underlying Pt layer. The rate-limiting step of the switching…
Pulsed current-induced magnetization reversal is investigated in the layer of (Ga,Mn)(Bi,As) dilute ferromagnetic semiconductor (DFS) epitaxially grown under tensile misfit strain causing perpendicular magnetic anisotropy in the layer. The…
Spin polarized currents are employed to efficiently manipulate the magnetization of ferromagnetic ultrathin films by exerting a torque on it. If the spin currents are generated by means of the spin-orbit interaction between a ferromagnetic…
We report that synthetic antiferromagnets (SAFs) can be efficiently switched by spin-orbit torques (SOTs) and the switching scheme does not obey the usual SOT switching rule. We show that both the positive and negative spin Hall angle…
Spin-orbit torque (SOT) enables efficient electrical control of magnetization, offering a pathway towards low-power spintronic devices. Magnetic topological insulators (TIs), with spin-momentum-locked surface states and intrinsic…
We investigate the current induced magnetization dynamics and magnetization switching in an unconventional p-wave superconductor sandwiched between two misaligned ferromagnetic layers by numerically solving Landau-Lifshitz-Gilbert equation…
Voltage control of magnetism and spintronics have been highly desirable, but rarely realized. In this work, we show voltage-controlled spin-orbit torque (SOT) switching in W/CoFeB/MgO films with perpendicular magnetic anisotropy (PMA) with…
The spin Hall effect originating from 5d heavy transition metal thin films such as Pt, Ta, and W is able to generate efficient spin-orbit torques that can switch adjacent magnetic layers. This mechanism can serve as an alternative to…
Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in…
Current-induced magnetic switching of a single magnetic molecule attached to two ferromagnetic contacts is considered theoretically, with the main emphasis put on the role of intrinsic spin relaxation processes. It is shown that…
The ability to switch magnetic elements by spin-orbit-induced torques has recently attracted much attention for a path towards high-performance, non-volatile memories with low power consumption. Realizing efficient spin-orbit-based…
We present an {\it ab-initio} study of the spin-transfer torque in a Fe/MgO/FePt/Fe magnetic tunnel junctions. We consider a FePt film with a thickness up to six unit cells, either in direct contact with the MgO spacer or with an…