磁性掺杂拓扑绝缘体中自旋轨道转矩的电场调控
强关联电子
2016-01-06 v1 介观与纳米尺度物理
摘要
电场对磁序的操纵已在自旋电子器件中被证明具有基础和技术重要性。迄今为止，已在各种磁性材料中探索了铁磁性、磁化强度和磁各向异性的电场调控，但自旋轨道转矩（spin-orbit torque, SOT）的高效电场调控仍难以实现。在此，我们报道利用顶栅FET结构在Cr掺杂拓扑绝缘体（TI）薄膜中实现巨SOT的有效电场调控。SOT强度可在可及的栅电压范围内调制4倍，并且它与薄膜中自旋极化表面电流表现出强相关性。此外，我们展示了在恒定电流和面内磁场施加于薄膜下，通过扫描栅电压实现磁化翻转。Cr掺杂TI中SOT的有效电场调控和巨自旋转矩效率可能催生与现代场效应半导体技术兼容的节能栅控自旋转矩器件的发展。
引用
@article{arxiv.1511.07442,
title = {Electric-field control of spin-orbit torque in a magnetically doped topological insulator},
author = {Yabin Fan and Xufeng Kou and Pramey Upadhyaya and Qiming Shao and Lei Pan and Murong Lang and Xiaoyu Che and Jianshi Tang and Mohammad Montazeri and Koichi Murata and Li-Te Chang and Mustafa Akyol and Guoqiang Yu and Tianxiao Nie and Kin L. Wong and Jun Liu and Yong Wang and Yaroslav Tserkovnyak and Kang L. Wang},
journal= {arXiv preprint arXiv:1511.07442},
year = {2016}
}
备注
22 pages, 4 figures