相关论文: In-Plane Ferroelectric Tunnel Junction
Ferroelectricity is characterized by the presence of spontaneous and switchable macroscopic polarization. Scaling limits of ferroelectricity have been of both fundamental and technological importance, but the probes of ferroelectricity have…
A memory window of ferroelectric field-effect transistors (FeFETs), defined as a separation of the HIGH-state and the LOW-state threshold voltages, is an important measure of the FeFET memory characteristics. In this study, we theoretically…
Charge transport across the interfaces in complex oxides attracts a lot of attention because it allows creating novel functionalities useful for device applications. In particular, it has been observed that movable domain walls in epitaxial…
Non-volatile memories (NVMs) have the potential to reshape next-generation memory systems because of their promising properties of near-zero leakage power consumption, high density and non-volatility. However, NVMs also face critical…
Covalent-polar semiconductors that show intrinsic two-dimensional (2D) vertical polarization present new device opportunities. These materials differ from ordinary ferroelectrics in that they are able to maintain polarization normal to a…
Ferroelectric random access memory cells (FeRAMs) have reached 450 x 400 nm production (0.18 micron^2) at Samsung with lead zirconate-titanate (PZT), 0.13 micron^2 at Matsushita with strontium bismuth tantalate (SBT), and comparable sizes…
Emerging non-volatile memory (NVM) technologies offer unique advantages in energy efficiency, latency, and features such as computing-in-memory. Consequently, emerging NVM technologies are considered an ideal substrate for computation and…
Extraordinary physical properties arise at polar interfaces in oxide materials, including the emergence of two-dimensional electron gases, sheet-superconductivity, and multiferroicity. A special type of polar interface are ferroelectric…
Ferroelectric materials are established candidates for beyond complementary metal-oxide-semiconductor technology, owing to their non-volatile spontaneous electrical polarization. The recent boom in electric dipole texture engineering and…
Ternary content addressable memories (TCAMs) are useful for certain computing tasks since they allow us to compare a search query with a whole dataset stored in the memory array. They can also unlock unique advantages for cryogenic…
Hybrid or organic plastic crystals have the potential as lead-free alternatives to conventional inorganic ferroelectrics. These materials are gaining attention for their multiaxial ferroelectricity, above-room-temperature Curie…
Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy and small cell size below 10nm. Here we study perpendicular…
We report on the spin-polarized electron injection through an Fe(100)/InAs(100) junction. The circularly polarized electroluminescence of injected electrons from epitaxially grown Fe thin film into InAs(100) in an external magnetic field is…
In-memory computing on a reconfigurable architecture is the emerging field which performs an application-based resource allocation for computational efficiency and energy optimization. In this work, we propose a Ferroelectric…
Quantum memories are key components in quantum information networks. Their ability to store and retrieve information on demand makes repeat-until-success strategies scalable. Warm alkali-metal vapours are interesting candidates for the…
Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster than alternative electrical approaches based on spin transfer…
We report on the fabrication and electrical characterization of few-layer graphene (FLG) devices coated with a ferroelectric polymer layer of poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]. Highly stable and reliable resistance…
Understanding the dynamic behavior of the domain structure is critical to the design and application of super-elastic freestanding ferroelectric thin films. The phase-field simulation is currently a powerful tool for observing, exploring,…
Ferroelectricity (Valasek, J. Phys. Rev. 1921, 17, 475) - a spontaneous formation of electric polarisation - is a solid state phenomenon, usually, associated with ionic compounds or complex materials. Here we show that, atypically for…
Nanoscale ferroelectrics that can be integrated into microelectronic fabrication processes are highly desirable for low-power computing and non-volatile memory devices. However, scalable novel ferroelectric materials, such as hafnium oxide…