相关论文: Interface roughness, carrier localization and wave…

We present a detailed theoretical analysis of the electronic and optical properties of c-plane InGaN/GaN quantum well structures with In contents ranging from 5% to 25%. Special attention is paid to the relevance of alloy induced carrier…

We present an atomistic description of the electronic and optical properties of $\text{In}_{0.25}\text{Ga}_{0.75}$N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy composition, strain and built-in field…

We present a detailed theoretical analysis of the electronic structure of $c$-plane InGaN/GaN quantum wells with indium contents varying between 10\% and 25\%. The electronic structure of the quantum wells is treated by means of an…

In this work, we study the impact that random alloy fluctuations have on the distribution of electrons and holes across the active region of a (In,Ga)N/GaN multi-quantum well based light emitting diode (LED). To do so, an atomistic…

Localization lengths of the electrons and holes in InGaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schr\"odinger equation. We have treated the distribution of indium atoms as random and found…

We examine the effect of carrier localization due to random alloy fluctuations on the radiative and Auger recombination rates in InGaN quantum wells as a function of alloy composition, crystal orientation, carrier density, and temperature.…

Light emitters based on the semiconductor alloy aluminium gallium nitride ((Al,Ga)N) have gained significant attention in recent years due to their potential for a wide range of applications in the ultraviolet (UV) spectral window. However,…

We investigate the impact of quantum well (QW) thickness on efficiency loss in c-plane InGaN/GaN LEDs using a small-signal electroluminescence (SSEL) technique. Multiple mechanisms related to efficiency loss are independently examined,…

Commercial InGaN/GaN light emitting diode heterostructures continue to suffer from efficiency droop at high current densities. Droop mitigation strategies target Auger recombination and typically require structural and/or compositional…

In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally…

We present direct experimental evidences of Anderson localization induced by the intrinsic alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the measurement of the luminescence spectrum under local injection of…

We calculate the intersubband absorption linewidth in quantum wells (QWs) due to scattering by interface roughness, LO phonons, LA phonons, alloy disorder, and ionized impurities, and compare it with the transport energy broadening that…

For nitride-based InGaN and AlGaN quantum well (QW) LEDs, the potential fluctuations caused by natural alloy disorders limit the lateral intra-QW carrier diffusion length and current spreading. The diffusion length mainly impacts the…

Understanding the impact of the alloy micro-structure on carrier transport becomes important when designing III-nitride-based LED structures. In this work, we study the impact of alloy fluctuations on the hole carrier transport in (In,Ga)N…

We show that the correlation between morphological fluctuations of two interfaces confining a quantum well strongly suppresses a contribution of interface disorder to inhomogeneous line width of excitons. We also demonstrate that only…

The band-inverted electron-hole bilayers, such as InAs/GaSb, are an interesting playground for the interplay of quantum spin Hall effect and correlation effects because of the small density of electrons and holes and the relatively small…

The joint impact of Anderson localization and many-body interaction is observed in the optical properties of strongly-disordered III-nitride quantum wells, a system where the Coulomb interaction and the fluctuating potential are pronounced…

We report transport mobility measurements for clean, two-dimensional (2D) electron systems confined to GaAs quantum wells (QWs), grown via molecular beam epitaxy, in two families of structures, a standard, symmetrically-doped GaAs set of…

We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal…

We present a theory for the intersubband absorption including electronic ground state correlations in a doped GaAs/Al_{35}Ga_{65}As quantum well system. Focusing on the influence of the Coulomb interaction among the carriers at low…