相关论文: Ambipolar quantum dots in undoped silicon fin fiel…

We study the exchange interaction between two hole-spin qubits in a double quantum dot setup in a silicon nanowire in the presence of magnetic and electric fields. Based on symmetry arguments we show that there exists an effective spin that…

We demonstrate a tunable Kondo effect realized in small quantum dots. We can switch our dot from a Kondo impurity to a non-Kondo system as the number of electrons on the dot is changed from odd to even. We show that the Kondo temperature…

This study alleviates the low operating temperature constraint of Si qubits. A qubit is a key element for quantum sensors, memories, and computers. Electron spin in Si is a promising qubit, as it allows both long coherence times and…

The field effect transistors (FETs) exhibited ultrahigh responsivity (107 A/W) to infrared light with great improvement of mobility in graphene / PbS quantum dot (QD) hybrid. These reported transistors are either unipolar or depletion mode…

We investigate the two-terminal nonlinear conductance of a Coulomb-blockaded quantum dot attached to chiral edge states. Reversal of the applied magnetic field inverts the system chirality and leads to a different polarization charge. As a…

We have realized a hybrid solid-state quantum device in which a single-electron semiconductor double quantum dot is dipole coupled to a superconducting microwave frequency transmission line resonator. The dipolar interaction between the two…

We present the results of a finite-element solution of the Laplace equation for the silicon-based trench-isolated double quantum-dot and the capacitively-coupled single-electron transistor device architecture. This system is a candidate for…

A novel approach for the control of exciton-exciton Coulomb coupling in semiconductor macroatoms/molecules is proposed. We show that by applying properly tailored external fields, we can induce ---or significantly reinforce--- excitonic…

Recent achievements in the field of gate defined semiconductor quantum dots reinforce the concept of a spin-based quantum computer consisting of nodes of locally connected qubits which communicate with each other via superconducting circuit…

Recent breakthroughs in quantum-dot circuit-quantum-electrodynamics (circuit-QED) systems are important both from a fundamental perspective and from the point of view of quantum photonic devices. However, understanding the applications of…

We show that two electrons confined in a square semiconductor quantum dot have two isolated low-lying energy eigenstates, which have the potential to form the basis of scalable computing elements (qubits). Initialisation, one-qubit and…

We study double quantum dots coupled to a quasistatic cavity mode with high mode-volume compression allowing for strong light-matter coupling. Besides the cavity-mediated interaction, electrons in different double quantum dots interact with…

We study exchange coupling in Si double quantum dots, which have been proposed as suitable candidates for spin qubits due to their long spin coherence times. We discuss in detail two alternative schemes which have been proposed for…

The non-Fermi-liquid properties of an ultrasmall quantum dot coupled to a lead and to a quantum box are investigated. Tuning the ratio of the tunneling amplitudes to the lead and box, we find a line of two-channel Kondo fixed points for…

We charge an individual donor with electrons stored in a quantum dot in its proximity. A Silicon quantum device containing a single Arsenic donor and an electrostatic quantum dot in parallel is realized in a nanometric field effect…

We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate electrodes allow us to independently tune the charge occupation…

Polymer field-effect transistors with 2D graphene electrodes are devices that merge the best of two worlds: on the one hand, the low-cost and processability of organic materials and, on the other hand, the chemical robustness, extreme…

We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune…

Using a laterally-fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the…

Low temperature zero-bias conductance through two side-coupled quantum dots is investigated using Wilson's numerical renormalization group technique. A low-temperature phase diagram is computed. Near the particle-hole symmetric point…