相关论文: Current splitting and valley polarization in elast…

Due to its strong bonds graphene can stretch up to 25% of its original size without breaking. Furthermore, mechanical deformations lead to the generation of pseudo-magnetic fields (PMF) that can exceed 300 T. The generated PMF has opposite…

Valleytronics using two-dimensional materials opens unprecedented opportunities for information processing with the valley polarizer being a basic building block. Paradigms such as strain engineering, the inclusion of line defects, and the…

The paper presents a theoretical description of the effects of strain induced by out-of-plane deformations on charge distributions and transport on graphene. A review of a continuum model for electrons using the Dirac formalism is…

The electron transport of different conical valleys is investigated in graphene with extended line-defects. Intriguingly, the electron with a definite incident angle can be completely modulated into one conical valley by a resonator which…

We study theoretically the electron current across a monolayer graphene/hexagonal boron nitride/bilayer graphene tunnelling junction in an external magnetic field perpendicular to the layers. We show that change in effective tunnelling…

We show how the trigonal warping effect in doped graphene can be used to produce fully valley polarized currents. We propose a device that acts both as a beam splitter and a collimator of these electronic currents. The result is…

We propose an all-electrical setup to generate valley polarization in graphene. A finite graphene sheet is connected to two normal metal electrodes each with two terminals along its zigzag edges, while the armchair edges remain free. When a…

In this Letter, both the manipulation of valley-polarized currents and the optical-like behaviors of Dirac fermions are theoretically explored in polycrystalline graphene. When strain is applied, the misorientation between two graphene…

We investigate the electronic transport in graphene nanoelectromechanical resonators (GrNEMS), known also as graphene nanodrums or nanomembranes. We demonstrate that these devices, despite small values of out-of-plane strain, between $0.1$…

Valley-polarized currents can be generated by local straining of multi-terminal graphene devices. The pseudo-magnetic field created by the deformation allows electrons from only one valley to transmit and a current of electrons from a…

The valley degree of freedom in 2D materials can be manipulated for low-dissipation quantum electronics called valleytronics. At the boundary between two regions of bilayer graphene with different atomic or electrostatic configuration,…

The low energy band structure of graphene has two inequivalent valleys at K and K' points of the Brillouin zone. The possibility to manipulate this valley degree of freedom defines the field of valleytronics, the valley analogue of…

In graphene, long-wavelength deformations that result in elastic shear strain couple to the low-energy Dirac electrons as pseudogauge fields. Using a scalable tight-binding model, we consider analogs to magnetotransport in mesoscopic…

The generation of a fully valley-polarized current (FVPC) in bulk graphene is a fundamental goal in valleytronics. To this end, we investigate valley-dependent transport through a strained graphene modulated by a finite magnetic…

We show that the optical excitation of graphene with polarized light leads to the pure valley current where carriers in the valleys counterflow. The current in each valley originates from asymmetry of optical transitions and electron…

Electron transport in nanoscale devices can often result in nontrivial spatial patterns of voltage and current that reflect a variety of physical phenomena, particularly in nonlocal transport regimes. While numerous techniques have been…

We investigate the electromechanical response of doubly clamped graphene nanoribbons to a transverse gate voltage. An analytical model is developed to predict the field-induced deformation of graphene nanoribbons as a function of field…

The existence of two-inequivalent valleys in the band structure of graphene has motivated the search of mechanisms that allow their separation and control for potential device applications. Among the several schemes proposed in the…

We recently shown, using tight-binding calculations, that nonequilibrium valley polarization can be realized in graphene, when the current is injected through "valley filter": a ballistic point contact with zigzag edges. Here we…

Particular strain geometry in graphene could leads to a uniform pseudo-magnetic field of order 10T and might open up interesting applications in graphene nano-electronics. Through quantum transport calculations of realistic strained…