相关论文: Modeling tunnel field effect transistors - from in…

We discuss a two-band model for two-dimensional superconductors with electron and hole bands separated by an energy gap and singlet $d$-wave pairing in each band. This type of model exhibits a V-shaped to U-shaped transition in the density…

In this paper we revisit the one-dimensional tunnelling problem. We consider different approximations for the transmission through the Coulomb barrier in heavy ion collisions at near-barrier energies. First, we discuss approximations of the…

Despite their ubiquity in nanoscale electronic devices, the physics of tunnel barriers has not been developed to the extent necessary for the engineering of devices in the few-electron regime. This problem is of urgent interest, as this is…

Proton tunneling across hydrogen bonds is a fundamental quantum effect with implications for spectroscopy, catalysis, and biomolecular stability. While state-of-the-art instanton and path-integral methods provide accurate multidimensional…

We present a first-principles band calculation for the quasi-one-dimensional (Q1D) organic superconductor (TMTSF)$_2$ClO$_4$. An effective tight-binding model with the TMTSF molecule to be regarded as the site is derived from a calculation…

A 2D quantum ballistic transport model based on the non-equilibrium Green's function formalism has been used to theoretically investigate the effects induced by an oxide crenel in a very short (7 nm) thin-film…

Single-crystal organic field-effect transistors (OFETs) based on p-channel molecular semiconductors have led to breakthrough carrier mobilities and to the observation of band-like transport. These results represent the limit in our quest…

An approximate method based on adiabatic time dependent density functional theory (TDDFT) is presented, that allows for the description of the electron dynamics in nanoscale junctions under arbitrary time dependent external potentials. In…

In the past decade, detection of THz radiation by plasma-wave-assisted frequency mixing in antenna-coupled field-effect transistors (TeraFETs) -- implemented in various semiconductor material systems (Si CMOS, GaN/AlGaN, GaAs/AlGaAs,…

We study the effects of tunnelling on the band structure and Fermi arc of a time-reversal broken Weyl semimetal (WSM). When coupled to a non-magnetic parabolic band, the WSM's chiral arc state lowers in energy and forms, together with a…

The scattering effects are studied in nanometer-scaled double-gate MOSFET, using Monte Carlo simulation. The non-equilibrium transport in the channel is analyzed with the help of the spectroscopy of the number of scatterings experienced by…

Inspired by new trends in atomtronics, cold atoms devices and Bose-Einstein condensate dynamics, we apply a general technique of N=4 extended Supersymmetric Quantum Mechanics to isospectral Hamiltonians with triple-well potentials, i.e.…

Tunnel ionization (TI) underlies many important ultrafast processes, such as high-harmonic generation and strong-field ionization. Among the existing theories for TI, many-electron weak-field asymptotic theory (ME-WFAT) is by design capable…

We study from first principles the transport properties of Al/AlOx/Al tunnel junctions. On this basis, we analyze the reliability of two analytical models for the conductance, namely the trapezoid potential barrier model and a tight-binding…

Thermofield dynamics (TFD) approach is a real time quantum field method for dealing with finite temperature quantum states in a purified version of usual density operator formalism at finite temperature. In the domain of quantum…

Direct and phonon-assisted tunneling currents in InAlGaAs-InGaAs bulk and double quantum well interband tunnel heterojunctions are simulated rigorously using the non-equilibrium Green's function formalism for coherent and dissipative…

Physics based numerical simulation has been carried out to probe the sub-gap density of states (DOS) and underlying electron transport properties of amorphous oxide based thin film transistors (TFTs). The DOS model of TFTs consists of…

Large-scale quantum computing requires cryogenic electronic controllers such as control/readout circuit and routing circuit. However, current technologies face high power dissipation problems, hindering large-scale qubit integration. Here,…

We investigated the resonant tunneling of a two-spin system through the double quantum dots in Al-N-implanted silicon tunnel FETs (TFETs) by electrical-transport measurements and Landau-Zener-St\"{u}ckelberg-Majorana interferometry with and…

We report the capability to simulate in a quantum mechanical tight-binding (TB) atomistic fashion NW devices featuring several hundred to millions of atoms and diameter up to 18 nm. Such simulations go far beyond what is typically…