相关论文: Tunneling in Graphene SymFETs
Local electronic structures of nanometer-sized patches of epitaxial graphene and its interface layer with SiC(0001) have been studied by atomically resolved scanning tunneling microscopy and spectroscopy. Localized states belonging to the…
A chip to wafer scale, CMOS compatible method of graphene device fabrication has been established, which can be integrated into the back end of the line (BEOL) of conventional semiconductor process flows. In this paper, we present…
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal…
We address the tunneling current in a graphene-hBN-graphene heterostructure as function of the twisting between the crystals. The twisting induces a modulation of the hopping amplitude between the graphene layers, that provides the extra…
The electrical conductivity of suspended graphene has recently been measured for the first time, and found to behave as \sigma ~ \sqrt{|n|} as expected for Dirac quasiparticles at large carrier density. The charge inhomogeneity is strongly…
Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of…
Isolated, atomically thin conducting membranes of graphite, called graphene, have recently been the subject of intense research with the hope that practical applications in fields ranging from electronics to energy science will emerge.…
The development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon, with the inherent difficulties of clean transfer and…
Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached…
Graphene-insulator-graphene vertical tunneling structures are discussed from a theoretical perspective. Momentum conservation in such devices leads to highly nonlinear current-voltage characteristics, which with gates on the tunnel junction…
Interlayer tunneling in graphite mesa-type structures is studied at a strong in-plane magnetic field $H$ up to 55 T and low temperature $T=1.4$ K. The tunneling spectrum $dI/dV$ vs. $V$ has a pronounced peak at a finite voltage $V_0$. The…
Transport through potential barriers in graphene is investigated using a set of metallic gates capacitively coupled to graphene to modulate the potential landscape. When a gate-induced potential step is steep enough, disorder becomes less…
We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ~0.14 eV. Contrary to prior observations of disordered…
The ground state of a graphene sheet at charge neutrality in a perpendicular magnetic field remains enigmatic, with various experiments supporting canted antiferromagnetic, bond ordered, and even charge density wave phases. A promising…
Dirac-electronic tunneling and nonlinear transport properties with both finite and zero energy bandgap are investigated for graphene with a tilted potential barrier under a bias. For validation, results from a finite-difference based…
The maturity of the chemical vapor deposition graphene-based device processing has increased from chip level demonstrations to wafer-scale fabrication in the past few years. Due to this wafer-scale, electrical characterization and analysis…
Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors (FETs) have evolved rapidly and are now considered as an option for conventional…
Graphene electrodes provide a suitable alternative to metal contacts in molecular conduction nanojunctions. Here, we propose to use graphene electrodes as a platform for effective photon assisted tunneling through molecular conduction…
Ripples in pristine freestanding graphene naturally orient themselves in an array that is alternately curved-up and curved-down; maintaining an average height of zero. Using scanning tunneling microscopy (STM) to apply a local force, the…
We show that a system of Josephson junctions coupled via low-resistance tunneling contacts to graphene substrate(s) may effectively operate as a current switching device. The effect is based on the dissipation-driven…