相关论文: A Physically based compact I-V model for monolayer…
Ionic liquid gated field-effect transistors (FETs) based on semiconducting transition metal dichalcogenides (TMDs) are used to study a rich variety of extremely interesting physical phenomena, but important aspects of how charge carriers…
The attachment of redox active molecules to transition metal dichalcogenides (TMDs), such as MoS2, constitutes a promising approach for designing electrochemically switchable devices through the control of the material charge/spin transport…
We investigate electronic transport through gate-defined quantum dots in molybdenum disulfide MoS$_2$ using an integrated charge detector. We observe a crossover from two weakly coupled single dots to a strongly coupled double quantum dot.…
Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device…
Transition-metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS2), are expected to be promising for next generation device applications. The existence of sulfur vacancies formed in MoS2, however, will potentially make devices…
Elucidating the polymorphism of transition metal dichalcogenide layers and the interplay between structure and properties is a key challenge for the application of these materials. We identify a novel low energy metastable phase of…
2D transition metal dichalcogenides (TMDs) have attracted a lot of attention recently for energy-efficient tunneling-field-effect transistor (TFET) applications due to their excellent gate control resulting from their atomically thin…
In a preceding paper, we have presented a general lattice formulation of the dynamic self-consistent field (DSCF) theory for inhomogeneous, unentangled homopolymer fluids. Here we apply the DSCF theory to study both transient and…
This paper presents an improved compact model for TeraFETs employing a nonlinear transmission line approach to describe the non-uniform carrier density oscillations and electron inertia effects in the TeraFET channels. By calculating the…
We study the collective electronic excitations in metallic single- and bilayer transition metal dichalcogenides (TMDCs) using time dependent density functional theory in the random phase approximation. For very small momentum transfers…
Atomically thin transition metal dichalcogenides can exhibit markedly different electronic properties compared to their bulk counterparts. In the case of NbSe$_2$, the question of whether its charge density wave (CDW) phase is enhanced in…
We study the optical behaviour of an arrangement in which the interface between a linear and non-linear dielectric media is covered by an embedded mono-layer of transition metal dichalcogenides (TMDC). The optical behaviour is qualitatively…
Transition metal dichalcogenides (TMDs) have recently attracted attention due to their interesting electronic and optical properties. Fabrication of these materials in a reliable and facile method is important for future applications, as…
A compact analytical model is developed for the mobile charge density of polar multiple channel field effect transistors. Two dimensional electron and hole gases can be potentially induced by spontaneous and piezoelectric polarization in…
Ion channels are of major interest and form an area of intensive research in the fields of biophysics and medicine since they control many vital physiological functions. The aim of this work is on one hand to propose a fully stochastic and…
In this paper piezoconductivity phenomenon in MOSFET channel is discussed and extension of drain current model with possibility of stress consideration is proposed. Analysis of obtained model combined with examination of stress components…
We report field-effect transistors (FETs) with single-crystal molybdenum disulfide (MoS2) channels synthesized by chemical vapor deposition (CVD). For a bilayer MoS2 FET, the mobility is ~17 cm2V-1s-1 and the on/off current ratio is ~108,…
In-plane heterojunction tunnel field effect transistors based on monolayer transition metal dichalcogenides are studied by means of self-consistent non-equilibrium Green's functions simulations and an atomistic tight-binding Hamiltonian. We…
In this paper we report a semianalytical model of the mass transfer impedance in microfluidic electrochemical chips (MEC). It is based on the molar advection diffusion equation in a microfluidic channel with a Poiseuille flow and an…
Reduced exciton mass, polarizability, and dielectric constant of the surrounding medium are essential properties for semiconducting materials, and they have been extracted recently from the magnetoexciton energies. However, the acceptable…