相关论文: Quantitative Measurements of Nanoscale Permittivit…
Microwave impedance microscopy (MIM) is a near-field imaging technique that has been used to visualize the local conductivity of materials with nanoscale resolution across the GHz regime. In recent years, MIM has shown great promise for the…
Scanning Microwave Impedance Microscopy (MIM) measurement of photoconductivity with 50 nm resolution is demonstrated using a modulated optical source. The use of a modulated source allows for measurement of photoconductivity in a single…
Microwave impedance microscopy (MIM) is an emerging scanning probe technique for nanoscale complex permittivity mapping and has made significant impacts in diverse fields from semiconductors to quantum materials. To date, the most…
We describe here the implementation of an interferometer-based microwave impedance microscope on a home-built tuning-fork based scanning probe microscope (SPM). Tuning-fork based SPMs, requiring only two electrical contacts for…
We report the implementation of a dilution-refrigerator-based scanning microwave impedance microscope (MIM) with a base temperature of ~ 100 mK. The vibration noise of our apparatus with tuning-fork feedback control is as low as 1 nm. Using…
The quantitative nanomechanical characterization of soft materials using the nanoindentation technique requires further improvements in the performances of instruments, including their force resolution in particular. A micro-machined…
We describe the use of a near-field scanning microwave microscope to image the permittivity and tunability of bulk and thin film dielectric samples on a length scale of about 1 micron. The microscope is sensitive to the linear permittivity,…
We present a detailed modeling and characterization of our scalable microwave nanoprobe, which is a micro-fabricated cantilever-based scanning microwave probe with separated excitation and sensing electrodes. Using finite-element analysis,…
Electronic transport in semiconducting single-wall carbon nanotubes is studied by combined scanning gate microscopy and scanning impedance microscopy (SIM). Depending on the probe potential, SIM can be performed in both invasive and…
In this paper, we describe the modification of Nanoscale Impedance Microscopy (NIM), namely, a combination of contact-mode atomic force microscopy with local impedance measurements. The postulated approach is based on the application of…
Tapping mode atomic force microscopy (AFM), also known as amplitude modulated (AM) or AC mode, is a proven, reliable and gentle imaging mode with widespread applications. Over the several decades that tapping mode has been in use,…
We study the channel width scaling of back-gated MoS2 metal-oxide-semiconductor field-effect transistors (MOSFETs) from 2 {\mu}m down to 60 nm. We reveal that the channel conductance scales linearly with channel width, indicating no evident…
Using a magnetic resonance force microscope (MRFM), the power emitted by a spin transfer nano-oscillator consisting of a normally magnetized Py$|$Cu$|$Py circular nanopillar is measured both in the autonomous and forced regimes. From the…
Scanning Probe Microscopy is used to study and quantify the nanoscale electric phenomena in the two classes of oxide systems, namely transport at electroactive grain boundaries and surface behavior of ferroelectric materials. Scanning…
Optomechanical transduction is demonstrated for nanoscale torsional resonators evanescently coupled to optical microdisk whispering gallery mode resonators. The on-chip, integrated devices are measured using a fully fiber-based system,…
We study the effciency of the magnetoimpedance (MI) of thin-wall circumferentially ordered nanotubes in sub-GHz and GHz frequency regimes using micromagnetic simulations. We consider empty ferromagnetic tubes as well as tubes filled with…
We demonstrate a scanning force microscope, based upon a quartz tuning fork, that operates below 100 mK and in magnetic fields up to 6 T. The microscope has a conducting tip for electrical probing of nanostructures of interest, and it…
Charge transport in amorphous semiconductors is considerably more complicated than process in crystalline materials due to abundant localized states. In addition to device-scale characterization, spatially resolved measurements are…
Heat transport in low-dimensional solids can significantly differ from their bulk counterpart due to various size-related effects. This offers rich heat transport phenomena to emerge. However, finding an appropriate thermometry method for…
Implementing microelectromechanical system (MEMS) resonators calls for detailed microscopic understanding of the devices, such as energy dissipation channels, spurious modes, and imperfections from microfabrication. Here, we report the…