相关论文: III-V Tri-Gate Quantum Well MOSFET: Quantum Ballis…
A comprehensive study of drain current dispersion effects in $\beta$-Ga$_2$O$_3$ FETs has been done using DC, pulsed and RF measurements. Both virtual gate effect in the gate-drain access region and interface traps under the gate are most…
We study the evolution of the quantum scattering time by gate voltage training in the topological insulator based on InAs/GaSb/InAs trilayer quantum wells. Depending on the minimal gate voltage applied during a gate voltage sweep cycle, the…
We investigate the thermoelectric performance of 2D nanojunctions with gate tunable architectures and varying channel lengths from 3 to 12 nm using a combination of first principles simulations, including density functional theory, DFT with…
The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we…
Quantum computation and quantum simulation require a versatile gate set to optimize circuit compilation for practical applications. However, existing platforms are often limited to specific gate types or rely on parametric couplers to…
Recent measurements on ultra-thin body Negative Capacitance Field Effect Transistors have shown subthreshold behaviors that are not expected in a classical MOSFET. Specifically, subthreshold swing was found to decrease with increased gate…
The utility of near-term quantum computers and simulators is likely to rely upon software-hardware co-design, with error-aware algorithms and protocols optimized for the platforms they are run on. Here, we show how knowledge of noise in a…
In this letter, we report on a unique device design strategy for increasing the breakdown voltage and hence Baliga Figure of Merit (BFOM) of III-nitride HEMTs by engineering the gate edge towards the drain. The breakdown of such devices…
The sensitivity of quantum systems to external disturbances is a fundamental problem for the implementation of functional quantum devices, quantum information and computation. Based on remarkable experimental progress in optics and…
Quantum computers are expected to be highly beneficial for chemistry simulations, promising significant improvements in accuracy and speed. The most prominent algorithm for chemistry simulations on NISQ devices is the Variational Quantum…
Mid-circuit measurements used in quantum error correction are essential in quantum computer architecture, as they read out syndrome data and drive logic gates. Here, we use a heavy-hex code prepared on a superconducting qubit array to…
Quantum computers promise tremendous impact across applications -- and have shown great strides in hardware engineering -- but remain notoriously error prone. Careful design of low-level controls has been shown to compensate for the…
In this work, we explore the triangularity effects on turbulent transport employing global gyrokinetic simulations performed with the ORB5 code. Numerous experiments on the Tokamak \`a Configuration Variable (TCV) and, more recently, on the…
Verifying the correct functioning of quantum gates is a crucial step towards reliable quantum information processing, but it becomes an overwhelming challenge as the system size grows due to the dimensionality curse. Recent theoretical…
Ideal, completely coherent quantum transport calculations had predicted that superlattice MOSFETs may offer steep subthreshold swing performance below 60mV/dec to around 39mV/dec. However, the high carrier density in the superlattice source…
Quantum dot (QD) lay-outs are becoming more complex as the technology is being applied to more complex multi-QD structures. This increase in complexity requires improved capacitance modeling both for design and accurate interpretation of QD…
The impact of local von Neumann measurements on quantum battery capacity is investigated in tripartite quantum systems. Two measurement-based protocols are proposed and the concept of optimal local projective operators is introduced.…
In recent years, Quantum Computing (QC) has progressed to the point where small working prototypes are available for use. Termed Noisy Intermediate-Scale Quantum (NISQ) computers, these prototypes are too small for large benchmarks or even…
In this work influence of gate extension, channel doping level, and channel thickness to short channel effects- DIBL effect and subthreshold swing, SS for the planar and vertical junctionless field effect transistors is compared. It is…
Device variability is a bottleneck for the scalability of semiconductor quantum devices. Increasing device control comes at the cost of a large parameter space that has to be explored in order to find the optimal operating conditions. We…