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We discuss electric transport and orbital magnetism of multilayer graphenes in a weak-magnetic field using the matrix decomposition technique. At zero temperature, the minimum conductivity is given by that of the monolayer system multiplied…

介观与纳米尺度物理 · 物理学 2008-01-31 Masaaki Nakamura , Lila Hirasawa

Two-dimensional graphene, carbon nanotubes and graphene nanoribbons represent a novel class of low dimensional materials that could serve as building blocks for future carbon-based nanoelectronics. Although these systems share a similar…

介观与纳米尺度物理 · 物理学 2009-06-05 Alessandro Cresti , Norbert Nemec , Blanca Biel , Gabriel Niebler , Francois Triozon , Gianaurelio Cuniberti , Stephan Roche

Temperature-dependent resistivity of graphene grown by chemical vapor deposition (CVD) is investigated. We observe in low mobility CVD graphene device a strong insulating behavior at low temperatures and a metallic behavior at high…

介观与纳米尺度物理 · 物理学 2011-08-16 J. Heo , H. J. Chung , Sung-Hoon Lee , H. Yang , D. H. Seo , J. K. Shin , U-In Chung , S. Seo , E. H. Hwang , S. Das Sarma

The carrier density and temperature dependence of the Hall mobility in mono-, bi- and tri-layer graphene has been systematically studied. We found that as the carrier density increases, the mobility decreases for mono-layer graphene, while…

介观与纳米尺度物理 · 物理学 2015-05-13 Wenjuan Zhu , Vasili Perebeinos , Marcus Freitag , Phaedon Avouris

The intrinsic values of the carriers mobility and density of the graphene layers inside graphite, the well known structure built on these layers in the Bernal stacking configuration, are not well known mainly because most of the research…

材料科学 · 物理学 2015-05-20 S. Dusari , J. Barzola-Quiquia , P. Esquinazi , N. García

In this review we discuss spin and charge transport properties in graphene-based single-layer and few-layer spin-valve devices. We give an overview of challenges and recent advances in the field of device fabrication and discuss two of our…

介观与纳米尺度物理 · 物理学 2016-02-24 F. Volmer , M. Drögeler , G. Güntherodt , C. Stampfer , B. Beschoten

Graphene nanoribbons and constrictions are envisaged as fundamental components of future carbon-based nanoelectronic and spintronic devices. At nanoscale, electronic effects in these devices depend heavily on the dimensions of the active…

We induce surface carrier densities up to $\sim7\cdot 10^{14}$cm$^{-2}$ in few-layer graphene devices by electric double layer gating with a polymeric electrolyte. In 3-, 4- and 5-layer graphene below 20-30K we observe a logarithmic upturn…

介观与纳米尺度物理 · 物理学 2018-02-21 R. S. Gonnelli , E. Piatti , A. Sola , M. Tortello , F. Dolcini , S. Galasso , J. R. Nair , C. Gerbaldi , E. Cappelluti , M. Bruna , A. C. Ferrari

We review the fabrication and key transport properties of graphene double layers, consisting of two graphene monolayers placed in close proximity, independently contacted, and separated by an ultra-thin dielectric. We outline a simple band…

介观与纳米尺度物理 · 物理学 2012-06-14 Seyoung Kim , Emanuel Tutuc

Graphene-based devices show $1/f$ low-frequency noise in several electronic transport properties, such as mobility and charge carrier concentration. The recent outburst of experimental studies on graphene-based devices integrated into…

介观与纳米尺度物理 · 物理学 2020-11-17 Francesco M. D. Pellegrino , Giuseppe Falci , Elisabetta Paladino

Carrier transport in gated 2D graphene monolayers is theoretically considered in the presence of scattering by random charged impurity centers with density $n_i$. Excellent quantitative agreement is obtained (for carrier density $n >…

介观与纳米尺度物理 · 物理学 2007-10-09 E. H. Hwang , S. Adam , S. Das Sarma

We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric-double-layer transistors to continuously tune the carrier density up to values exceeding 10^{14} cm^{-2}. Whereas in…

介观与纳米尺度物理 · 物理学 2016-07-13 J. T. Ye , M. F. Craciun , M. Koshino , S. Russo , S. Inoue , H. T. Yuan , H. Shimotani , A. F. Morpurgo , Y. Iwasa

The temperature dependence of electric transport properties of single-layer and few-layer graphene at large charge doping is of great interest both for the study of the scattering processes dominating the conductivity at different…

介观与纳米尺度物理 · 物理学 2016-09-02 R. S. Gonnelli , F. Paolucci , E. Piatti , Kanudha Sharda , A. Sola , M. Tortello , Jijeesh R. Nair , C. Gerbaldi , M. Bruna , S. Borini

We investigate magneto-transport through graphene nano-ribbons as a function of gate and bias voltage, and temperature. We find that a magnetic field systematically leads to an increase of the conductance on a scale of a few tesla. This…

介观与纳米尺度物理 · 物理学 2010-10-12 Jeroen B. Oostinga , Benjamin Sacepe , Monica F. Craciun , Alberto F. Morpurgo

Charge carriers in a graphene sheet, a single layer of graphite, exhibit much distinctive characteristics to those in other two-dimensional electronic systems because of their chiral nature. In this report, we focus on the observation of…

介观与纳米尺度物理 · 物理学 2012-05-28 Dong-Keun Ki , Dongchan Jeong , Jae-Hyun Choi , Kee-Su Park , Hu-Jong Lee

This study investigates the nanoscale conductivity of encapsulated monolayer graphene at temperatures down to 5 K and magnetic fields of up to 1 T. We use the scattering-type scanning near-field optical microscopy (s-SNOM) technique to…

A gate induced insulating behavior at zero magnetic field is observed in a high mobility suspended monolayer graphene near the charge neutrality point. The graphene device initially cleaned by a current annealing technique was undergone a…

介观与纳米尺度物理 · 物理学 2021-03-03 Cenk Yanik , Vahid Sazgari , Abdulkadir Canatar , Yaser Vaheb , Ismet I. Kaya

We study fluctuations of the conductance of micron-sized graphene devices as a function of the Fermi energy and magnetic field. The fluctuations are studied in combination with analysis of weak localization which is determined by the same…

介观与纳米尺度物理 · 物理学 2015-05-13 D. W. Horsell , A. K. Savchenko , F. V. Tikhonenko , K. Kechedzhi , I. V. Lerner , V. I. Fal'ko

The nonequilibrium dynamics of carriers and phonons in graphene is investigated by solving the microscopic kinetic equations with the carrier-phonon and carrier-carrier Coulomb scatterings explicitly included. The Fermi distribution of hot…

介观与纳米尺度物理 · 物理学 2012-03-15 B. Y. Sun , Y. Zhou , M. W. Wu

We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a…

介观与纳米尺度物理 · 物理学 2010-10-12 Thiti Taychatanapat , Pablo Jarillo-Herrero
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