相关论文: An electronic ratchet is required in nanostructure…
Electronic flying qubits offer an interesting alternative to photonic qubits: electrons propagate slower, hence easier to control in real time, and Coulomb interaction enables direct entanglement between different qubits. Although their…
We investigate the electronic structure and defect properties of Sn- and Ge- doped ZnTe by first-principles calculations within the DFT+$GW$ formalism. We find that $(\text{Sn}_\text{Zn})$ and $(\text{Ge}_\text{Zn})$ introduce isolated…
The integration of the coupling effects of intrinsic wettability and surface charge in a nanochannel can cause non-intuitive behavior in the electrokinetic energy conversion processes. We demonstrate that in a nanofluidic device the energy…
Our goal is to electronically regulate electrochemical cells. For this, we introduced a third element, called the gate, which was placed between the cathode and the anode electrodes of the cell. Voltage applied to this element controlled…
The novel concept of non-compensated n-p codoping has made it possible to create tunable intermediate bands in the intrinsic band gap of TiO2, making the codoped TiO2 a promising material for developing intermediate band solar cells…
We investigate electron transport in two quantum circuits with mutual Coulomb interaction. The first circuit is a double quantum dot connected to two electron reservoirs, while the second one is a quantum point contact in the weak tunneling…
Tandem solar cells are at the forefront of extending the efficiency limits of solar cell technology. Among two-terminal tandems, current-matched (CM) tandem solar cells are of particular interest, owing to their relative ease of…
To absorb the photons below the band-gap energy effectively, we proposed a quantum dot (QD) photocell modeled by multi-level system for the quantum yields and photo-to-charge efficiency limits. The theoretical results show the quantum…
Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap…
Quantum mechanics dictates the band-structure of materials that is essential for functional electronic components. With increased miniaturization of devices, it becomes possible to exploit the full potential of quantum mechanics through the…
The purpose of this work is to look for a practical structure for application of quantum dots (QD) in solar cells in order to enhance sub-band gap photon absorption. We focuse on a stack of strain-compensated GaSb/GaAs type-II QDs. We…
Complex electronic band structures, with multiple valleys or bands at the same or similar energies can be beneficial for thermoelectric performance, but the advantages can be offset by inter-valley and inter-band scattering. In this paper,…
The quest for optimal perovskite for tandem cell configurations is challenging as it involves several factors ranging from device level performance under field conditions to degradation rates and cost. Here, we first highlight the…
The power conversion efficiency of organic solar cells has recently improved beyond 20%. The active layers of these devices comprise of at least two organic semiconductors, forming a type II heterojunction. Hereby, the device performance is…
A 2-D photonic crystal was integrated experimentally into a thin-film crystalline-silicon solar cell of 1-{\mu}m thickness, after numerical optimization maximizing light absorption in the active material. The photonic crystal boosted the…
We consider quantum wire arrays consisting of GaAs rods embedded in Al$_{x}$Ga$_{1-x}$As and disposed in sites of a square or triangular lattice. The electronic and hole spectra around the conduction band bottom and the valence band top are…
Intermediate band solar cells (IBSCs) pursue the increase in efficiency by absorbing below-bandgap energy photons while preserving the output voltage. Experimental IBSCs based on quantum dots have already demonstrated that both…
Quantum confined devices of three-dimensional topological insulators have been proposed to be promising and of great importance for studies of confined topological states and for applications in low energy-dissipative spintronics and…
Quantum technologies aim to assemble devices whose operation is controlled by the quantum state of individual atoms. Achieving this level of control in a practical, scalable design remains, however, a major obstacle to mass societal…
The electronic structures of substitutional rare-earth (RE) impurities in GaAs and cubic GaN are calculated. The total energy is evaluated with the self-interaction corrected local spin density approximation, by which several configurations…