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Nearly all ultrawide-bandgap oxides are affected by hole localization that limits $p$-type conductivity and thus potential applications for these materials. Highly localized holes, also known as hole polarons, trap in the vicinity of…

材料科学 · 物理学 2025-07-17 John L. Lyons

P mono-doped and (P, N) co-doped ZnO are investigated by the first-principles calculations. It is found that substitutive P defect forms a deep acceptor level at O site (PO) and it behaves as a donor at Zn site (PZn), while interstitial P…

材料科学 · 物理学 2015-05-13 Ren-Yu Tian , Yu-Jun Zhao

First-principles calculations based on density functional theory have been carried out to understand the mechanism of fabricating As-doped p-type ZnO semiconductors. It has been confirmed that AsZn-2VZn complex is the most plausible…

材料科学 · 物理学 2013-05-20 Chol-Jun Yu , Yong-Guk Choe , Son-Guk Ri , Myong-Il Kim , Song-Jin Im

The hydrogen interstitial and the substitutional Al_Zn, Ga_Zn and In_Zn are all shallow donors in ZnO and lead to n-type conductivity. Although shallow donors are expected to repel each other, we show by first principles calculations that…

材料科学 · 物理学 2015-06-04 Masahiko Matsubara , Mozhgan N. Amini , Rolando Saniz , Dirk Lamoen , Bart Partoens

Using a first-principles band-structure method and a special quasirandom structure (SQS) approach, we systematically calculate the band gap bowing parameters and \emph{p}-type doping properties of (Zn, Mg, Be)O related random ternary and…

材料科学 · 物理学 2009-12-01 Hongliang Shi , Yifeng Duan

Despite the lack of reproducible experimental confirmation, group-V elements have been considered as possible sources of p-type doping in ZnO in the form of simple and complex defects. Using ab initio calculations, based on state-of-the-art…

材料科学 · 物理学 2014-04-30 Guido Petretto , Fabien Bruneval

The structural phase transitions and the fundamental band gaps of Mg(x)Zn(1-x)O alloys are investigated by detailed first-principles calculations in the entire range of Mg concentrations x, applying a multiple-scattering theoretical…

This study investigates the novelty of the crystalline and electronic structure of (Mg,Ti)-doped ZnO and the co-doped Zn1-x-yMgxTiyO structures using Gaussian and plane-wave basis sets, as implemented in the CP2K code. The goal of…

材料科学 · 物理学 2025-03-05 Sidi Ahmedbowba , Fehmi Khadri , Walid Ouerghui , Said Ridene

The self-interaction corrected local spin-density approximation is used to investigate the ground-state valency configuration of transition metal (TM=Mn, Co) impurities in p-type ZnO. Based on the total energy considerations, we find a…

强关联电子 · 物理学 2007-05-23 L. Petit , T. C. Schulthess , A. Svane , Z. Szotek , W. M. Temmerman , A. Janotti

Possibilities of turning intrinsically n-type oxide semiconductors like ZnO and Zn$_{1-x}$Mg$_x$O into p-type materials are investigated. Motivated by recent experiments on Zn$_{1-x}$Mg$_x$O doped with nitrogen we analyze the electronic…

材料科学 · 物理学 2017-01-12 Daniel F. Urban , Wolfgang Körner , Christian Elsässer

Semiconductors with wide band gap (3.0 eV), high dielectric constant (> 10), good thermal dissipation, and capable of $n$- and $p$-type doping are highly desirable for high-energy power electronic devices. Recent studies indicate that $\rm…

材料科学 · 物理学 2022-02-11 Fernando P. Sabino , Intuon Chatratin , Anderson Janotti , Gustavo M. Dalpian

We present the results of a computational study of ZnO in the presence of Co and Mn substitutional impurities. The goal of our work is to identify potential ferromagnetic ground states within the (Zn,Co)O or (Zn,Mn)O material systems that…

材料科学 · 物理学 2021-03-09 Nicola A. Spaldin

GeO$_2$ has an $\alpha$-quartz-type crystal structure with a very wide fundamental band gap of 6.6 eV and is a good insulator. Here we find that the stable rutile-GeO$_2$ polymorph with a 4.6 eV band gap has a surprisingly low $\sim$6.8 eV…

材料科学 · 物理学 2020-11-19 Christian A. Niedermeier , Keisuke Ide , Takayoshi Katase , Hideo Hosono , Toshio Kamiya

The electronic and optical properties of self-trapped holes in kappa-phase orthorhombic Ga2O3 in conjunction with isoelectronic and acceptor dopants were studied using hybrid density functional theory. Hole trapping was found to be…

Black phosphorus nitrogen (BP-N) is an attractive high-energy-density material. However, high-pressure synthesized BP-N will decompose at low-pressure and cannot be quenched to ambient conditions. Finding a method to stabilize it at 0 GPa…

材料科学 · 物理学 2025-01-03 Guo Chen , Chengfeng Zhang , Yuanqin Zhu , Bingqing cao , Jie Zhang , Xianlong Wang

Doped lithium lanthanum zirconium oxide (LLZO) is a promising class of solid electrolytes for lithium-ion batteries due to their good electrochemical stability and compatibility with Li metal anodes. Ionic diffusivity in these ceramics is…

材料科学 · 物理学 2023-05-16 Juan C. Verduzco , Ernesto E. Marinero , Alejandro Strachan

In this work, we report the combined effect of donor (Nd) and acceptor (Li) co-doping at the Zn-site of ZnO ceramics on structural, microstructural and dielectric properties. Combining experimental observations with DFT based theoretical…

材料科学 · 物理学 2020-09-10 Md. Zahidur Rahaman , Hidekazu Tanaka , A. K. M. Akther Hossain

Doped heavy metal-free III-V semiconductor nanocrystal quantum dots are of great interest both from the fundamental aspects of doping in highly confined structures, and from the applicative side of utilizing such building blocks in the…

介观与纳米尺度物理 · 物理学 2023-06-27 Lior Asor , Jing Liu , Shuting Xiang , Nir Tessler , Anatoly I. Frenkel , Uri Banin

We present a comprehensive study on the structure and optical properties of Mn-and Co-doped ZnO samples prepared via solid-state reaction method with different dopant concentrations and atmospheres. The samples were structural and…

Different samples of Zn1-xMnxO series have been prepared by conventional solid state sintering method. It has been identified, up to what extent of doping enable us to synthesize single-phase polycrystalline Mn doped ZnO samples which is…

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