中文
相关论文

相关论文: Chemically stabilized epitaxial wurtzite-BN thin f…

200 篇论文

CaFe2O4 is a highly anisotropic antiferromagnet reported to display two spin arrangements with up-up-down-down (phase A) and up-down-up-down (phase B) configurations. The relative stability of these phases is ruled by the competing…

材料科学 · 物理学 2020-09-01 Silvia Damerio , Pavan Nukala , Jean Juraszek , Pim Reith , Hans Hilgenkamp , Beatriz Noheda

We report the growth of undoped and Fe (2 and 5 at. percentage) doped molybdenum oxide thin films on c-plane of sapphire substrate using pulsed laser ablation. X-ray diffraction results show that the films are oriented in (100) direction…

材料科学 · 物理学 2009-12-08 Ram Prakash , D. M. Phase , R. J. Choudhary , Ravi Kumar

(111)NiO epitaxial films are grown on c-sapphire substrates at various growth temperatures ranging from room-temperature to 600C using pulsed laser deposition (PLD) technique. Two series of samples, where different laser fluences are used…

We investigated the high temperature decomposition behavior of wurtzite phase Ti$_{1-x}$Al$_{x}$N films using experimental methods and first-principles calculations. Single phase metastable wurtzite Ti$_{1-x}$Al$_{x}$N (x = 0.65, 0.75, 085…

Insulating hexagonal boron nitride (hBN) films with precisely controlled thickness are ideal dielectric components to modulate various interfaces in electronic devices. To achieve this, high-quality hBN with controlled atomic configurations…

We have synthesized epitaxial Ba2IrO4 (BIO) thin-films on SrTiO3 (001) substrates by pulsed laser deposition and studied their electronic structure by dc-transport and optical spectroscopic experiments. We have observed that BIO thin-films…

强关联电子 · 物理学 2014-04-08 J. Nichols , O. B. Korneta , J. Terzic , G. Cao , J. W. Brill , S. S. A. Seo

The heteroepitaxial growth of Re (0001) films on Nb (110) surfaces has been investigated. Nb/Re bilayers were grown on A-plane sapphire -- alpha-Al2O3 (11-20) -- by molecular beam epitaxy. While Re grew with a (0001) surface, the in-plane…

材料科学 · 物理学 2010-11-23 Paul B. Welander

Single crystal epitaxial thin films of UN and U$_2$N$_3$ have been grown for the first time by reactive DC magnetron sputtering. These films provide ideal samples for fundamental research into the potential accident tolerant fuel, UN, and…

材料科学 · 物理学 2018-03-07 E. Lawrence Bright , S. Rennie , M. Cattelan , N. A. Fox , D. T. Goddard , R. Springell

Biaxially textured LuNi2BC thin films with Tc up to 15.8 K and a residual resistivity ratio up to 15 have been prepared. The films were deposited on MgO(110) substrates using pulsed laser deposition from a stoichiometric target. Via the…

超导电性 · 物理学 2016-09-08 T. Niemeier , R. Hühne , A. Köhler , G. Behr , L. Schultz , B. Holzapfel

The first examples of single crystal epitaxial thin films of a high entropy perovskite oxide are synthesized. Pulsed laser deposition is used to grow the configurationally disordered ABO3 perovskite, Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3,…

Here we study the kinetics of liquefaction and solidification of thin bismuth films grown on the insulating substrate by the pulsed laser deposited (PLD) and molecular beam epitaxy (MBE) and investigated by in situ electron and X-ray…

材料科学 · 物理学 2022-05-16 Tjeerd R. J. Bollmann , Maciej Jankowski

Using comprehensive x-ray reciprocal space mapping, we establish the precise lattice-matching composition for wurtzite $Sc_xAl_{1-x}N$ layers on (0001) GaN to be x = 0.14+/-0.01. 100-nm thick $Sc_xAl_{1-x}N$ films (x = 0.09 - 0.19) were…

材料科学 · 物理学 2024-06-04 Rajendra Kumar , Govardan Gopakumar , Zain Ul Abdin , Michael J. Manfra , Oana Malis

We report on the structural properties of epitaxial FeO layers grown by molecular beam epitaxy on MgO(111). The successful stabilization of polar FeO films as thick as 16 monolayers (ML), obtained by deposition and subsequent oxidation of…

材料科学 · 物理学 2015-06-03 Jacek Gurgul , Ewa Młyńczak , Nika Spiridis , Józef Korecki

We report molecular beam epitaxial growth of a SnTe (111) layer on a CdTe template, fabricated by depositing it on a GaAs (111)A substrate, instead of BaF$_2$ which has been conventionally used as a substrate. By optimizing temperatures for…

材料科学 · 物理学 2016-09-21 Ryo Ishikawa , Tomonari Yamaguchi , Yusuke Ohtaki , Ryota Akiyama , Shinji Kuroda

We report the growth of high-quality c-axis-oriented epitaxial MgB2 thin films by using a pulsed laser deposition technique. The thin films grown on (1`1 0 2) Al2O3 substrates show a Tc of 39 K. The critical current density in zero field is…

超导电性 · 物理学 2009-11-07 W. N. Kang , Hyeong-Jin Kim , Eun-Mi Choi , C. U. Jung , Sung-Ik Lee

Epitaxial hcp Cobalt films with pronounced c-axis texture have been prepared by pulsed lased deposition (PLD) either directly onto Al2O3 (0001) single crystal substrates or with an intermediate Ruthenium buffer layer. The crystal structure…

材料科学 · 物理学 2009-11-13 Jens Brandenburg , Ruben Hühne , Volker Neu , Ludwig Schultz

Chromium selenide thin films were grown epitaxially on Al${_2}$O${_3}$(0001) and Si(111)-(7${\times}$7) substrates using molecular beam epitaxy (MBE). Sharp streaks in reflection high-energy electron diffraction and triangular structures in…

We report on the preparation and characterization of epitaxial thin films of the double-perovskite Sr$_2$CrWO$_6$ by Pulsed Laser Deposition (PLD). On substrates with low lattice mismatch like SrTiO$_3$, epitaxial Sr$_2$CrWO$_6$ films with…

强关联电子 · 物理学 2009-11-07 J. B. Philipp , D. Reisinger , M. Schonecke , M. Opel , A. Marx , A. Erb , L. Alff , R. Gross

Homogeneous highly epitaxial LaSrMnO3 (LSMO) thin films have been grown on Yttria-stabilized-Zirconia (YsZ) / CeO2 buffer layers on technological relevant 4" silicon wafers using a Twente Solid State Technology B.V. (TSST) developed large…

CrN-based alloy thin films are of interest as thermoelectric materials for energy harvesting. Ab initio calculations show that dilute alloying of CrN with 3 at.% W substituting Cr, induce flat electronic bands and push the Fermi level EF…