相关论文: Pure spin current transport in a SiGe alloy

We report on the first demonstration of generating a spin current and spin transport in a highly doped Si channel at room temperature (RT) using a four-terminal lateral device with a spin injector and a detector consisting of an Fe/MgO…

We show nonlocal spin transport in n-Ge based lateral spin-valve devices with highly ordered Co_2FeSi/n^+-Ge Schottky tunnel contacts. Clear spin-valve signals and Hanle-effect curves are demonstrated at low temperatures, indicating…

We report electrical spin injection and detection in degenerately doped n-type Ge channels using Mn5Ge3C0.8/Al2O3/n^{+}-Ge tunneling contacts for spin injection and detection. The whole structure is integrated on a Si wafer for…

The nonlocal spin injection in lateral spin valves is highly expected to be an effective method to generate a pure spin current for potential spintronic application. However, the spin valve voltage, which decides the magnitude of the spin…

Spin transport electronics - spintronics - focuses on utilizing electron spin as a state variable for quantum and classical information processing and storage. Some insulating materials, such as diamond, offer defect centers whose…

A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts,…

We demonsrtate electrical spin injection and detection in $n$-type Ge ($n$-Ge) at room temperature using four-terminal nonlocal spin-valve and Hanle-effect measurements in lateral spin-valve (LSV) devices with Heusler-alloy Schottky tunnel…

The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states has led to the observation of new electronic transport phenomena such as anomalously quantized…

We present measurements of pure spin current absorption on lateral spin valves. By varying the width of the absorber we demonstrate that spin current absorption measurements enable to characterize efficiently the spin transport properties…

The electron spin lifetime and diffusion length are transport parameters that define the scale of coherence in spintronic devices and circuits. Since these parameters are many orders of magnitude larger in semiconductors than in metals,…

We have measured the spin injection efficiency and spin lifetime in Co$_2$FeSi/$n$-GaAs lateral nonlocal spin valves from 20 to 300 K. We observe large ($\sim$40 $\mu$V) spin valve signals at room temperature and injector currents of…

Spin transport in non-degenerate semiconductors is expected to pave a way to the creation of spin transistors, spin logic devices and reconfigurable logic circuits, because room temperature (RT) spin transport in Si has already been…

We demonstrate the injection and transport of spin-polarized electrons through n-type doped silicon with in-plane spin-valve and perpendicular magnetic field spin precession and dephasing ("Hanle effect") measurements. A voltage applied…

We have succeeded in fully describing dynamic properties of spin current including the different spin absorption mechanism for longitudinal and transverse spins in lateral spin valves, which enables to elucidate intrinsic spin transport and…

Electrical spin transport and accumulation have been measured in highly Si doped Al0.3Ga0.7As utilizing a lateral spin transport device. Persistent photoconductivity allows for the tuning of the effective carrier density of the channel…

The temperature evolution of spin relaxation time, {\tau}sf, in degenerate silicon (Si)-based lateral spin valves is investigated by means of the Hanle effect measurements. {\tau}sf at 300 K is estimated to be 1.68+-0.03 ns and…

We show spin lifetimes of 12.6 ns and spin diffusion lengths as long as 30.5 \mu m in single layer graphene non-local spin transport devices at room temperature. This is accomplished by the fabrication of Co/MgO-electrodes on a Si/SiO$_2$…

Spin accumulation and spin precession in single-layer graphene are studied by non-local spin valve measurements at room temperature. The dependence of the non-local magnetoresistance on electrode spacing is investigated and the results…

We study spin transport through a suspended Cu channel by an electrical non-local 4-terminal measurement for future spin mechanics applications. A magnetoresistance due to spin transport through the suspended Cu channel is observed, and its…

Electrical spin injection and transport in silicon are central challenges for realizing semiconductor-based spintronic devices, particularly in p-type Si, where strong spin relaxation and interface effects often suppress detectable spin…