相关论文: Magnetoresistive sensors based on the elasticity o…
We develop and analyze an advanced concept for domain wall based sensing of rotations. Moving domain walls in n closed loops with n-1 intersecting convolutions by rotating fields, we can sense n rotations. By combining loops with coprime…
We experimentally realize a sophisticated structure geometry for reliable magnetic domain wall-based multi-turn-counting sensor devices, which we term closed-loop devices that can sense millions of turns. The concept relies on the reliable…
We report on the direct observation of spin wave and elastic wave emission from magnetic domain walls in ferromagnetic thin films. Driven by alternating homogeneous magnetic fields the magnetic domain walls act as coherent magnetisation…
The magnetoresistance (MR) associated with domain boundaries has been investigated in microfabricated bcc Fe (0.65 to 20 $\mu$m linewidth) wires with controlled stripe domains. Domain configurations have been characterized using magnetic…
The resistivity due to a domain wall in ferromagnetic metallic wire is calculated based on the linear response theory. The interaction between conduction electrons and the wall is expressed in terms of a classical gauge field which is…
Domain walls (DWs) in magnetic nanowires are promising candidates for a variety of applications including Boolean/unconventional logic, memories, in-memory computing as well as magnetic sensors and biomagnetic implementations. They show…
We theoretically study the motion of a magnetic domain wall induced by transverse elastic waves in a one-dimensional magnetic wire, which respects both rotational and translational symmetries. By invoking the conservation of the associated…
A custom-developed magneto-mechanical resonator (MMR) for wireless pressure measurement is investigated for potential applications in process engineering. The MMR sensor utilises changes in the resonance frequency caused by pressure on a…
The authors have investigated magnetic domain wall induced capacitance variation as a tool for the detection of magnetic reversal in magnetic nanowires for in-plane (NiFe) and out-of-plane (Co/Pd) magnetization configurations. The switching…
A series of microstructures designed to pin domain-walls (DWs) in (Ga,Mn)As with perpendicular magnetic anisotropy has been employed to determine extrinsic and intrinsic contributions to DW resistance. The former is explained quantitatively…
Despite the relevance of current-induced magnetic domain wall (DW) motion for new spintronics applications, the exact details of the current-domain wall interaction are not yet understood. A property intimately related to this interaction…
We develop a theory to compute the domain-wall magnetoresistance (DWMR) in antiferromagnetic (AFM) metals with different spin structures. In the diffusive transport regime, the DWMR can be either {\it negative} or positive depending on the…
We report on the noise performance characteristics of magnetic sensors using both magnetic tunnel junction (MTJ) and giant magnetoresistance (GMR) elements. Each sensor studied has a notably different noise and detectivity. Of the sensors…
Magnetoelectric (ME) magnetic field sensors commonly rely on one of the two modulation principles: the nonlinear dependence of magnetostrictive strain on the applied field or the stress-induced change in magnetization susceptibility. While…
Domain wall (DW) devices have garnered recent interest for diverse applications including memory, logic, and neuromorphic primitives; fast, accurate device models are therefore imperative for large-scale system design and verification.…
We have observed the eigenmodes of coupled transverse domain walls in a pair of ferromagnetic nanowires. Although the pair is coupled magnetostatically, its spectrum is determined by a combination of pinning by edge roughness and dipolar…
A method for deterministic control of the magnetic order parameter using an electrical stimulus is highly desired for the new generation of spintronic and magnetoelectronic devices. Much effort has been focused on magnetic domain-wall…
Manipulation of magnetic domain walls can be used to improve the capabilities of the next generation of memory and sensing devices. Materials of recent interest for such devices include heterostructures of ultrathin ferromagnets sandwiched…
Domain walls are the transition regions between two magnetic domains. These objects have been very relevant during the last decade, not only due to their intrinsic interest in the development of novel spintronics devices but also because of…
The dynamic behaviors of magnetic domain walls have significant implications for developing advanced spintronic devices. In this study, we investigate the intriguing resonance phenomenon within the magnetic domain wall structure and its…