相关论文: Weak Localization and Weak Antilocalization in Dou…
We non-perturbatively analyze the effect of electron-electron interactions on weak localization (WL) in relatively short metallic conductors with a tunnel barrier. We demonstrate that the main effect of interactions is electron dephasing…
Motivated by the experimental difficulty to produce topological insulators (TIs) of the Bi$_2$Se$_3$ family with pure surface-state conduction, we study the effect that the bulk can have on the low-temperature transport properties of gated…
A random-matrix theory is presented which shows that breaking time-reversal symmetry by itself does {\em not} suppress the weak-localization correction to the conductance of a disordered metal wire attached to a superconductor. Suppression…
We consider magnetotransport in a disordered two-dimensional electron gas in the presence of a periodic modulation in one direction. Existing quasiclassical and quantum approaches to this problem account for Weiss oscillations in the…
In the presence of the charged impurities, we study the weak localization (WL) effect by evaluating the quantum interference correction (QIC) to the conductivity of Dirac fermions in graphene. With the inelastic scattering rate due to…
Weak antilocalization (WAL) effect is commonly observed in 2D systems, or 3D topological insulators, topological semimetal systems. Here we report the clear sign of WAL effect in high quality Ta$_{0.7}$Nb$_{0.3}$Sb$_2$ single crystals, in…
The presence of both inversion ($P$) and time-reversal ($T$) symmetries in solids leads to a well-known double degeneracy of the electronic bands (Kramers degeneracy). When the degeneracy is lifted, spin textures can be directly observed in…
The nonlinear behavior of the Hall resistivity at low magnetic fields in single quantum well GaAs/In$_x$Ga$_{1-x}$As/GaAs heterostructures with degenerated electron gas is studied. It has been found that this anomaly is accompanied by the…
Quantum corrections to electrical resistance can serve as sensitive probes of the magnetic landscape of a material. For example, interference between time-reversed electron paths gives rise to weak localization effects, which can provide…
In condensed matter systems, coherent backscattering and quantum interference in the presence of time-reversal symmetry lead to well-known phenomena such as weak localization (WL) and universal conductance fluctuations (UCF). Here we use…
The interference induced transverse negative magnetoresistance of GaAs/InGaAs/GaAs quantum well heterostructures has been studied in the presence of strong in-plane magnetic field. It is shown that effect of in-plane magnetic field is…
Results of experimental study of the weak localization phenomenon in 2D system with artificial inhomogeneity of potential relief are presented. It is shown that the shape of the magnetoconductivity curve is determined by the statistics of…
The weak antilocalization (WAL) effect is known as a quantum correction to the classical conductivity, which never appeared in two-dimensional magnets. In this work, we reported the observation of a WAL effect in the van der Waals…
Using the Feynman diagram techniques, we derive the finite-temperature conductivity and magnetoconductivity formulas from the quantum interference and electron-electron interaction, for a three-dimensional disordered Weyl semimetal. For a…
We report transport studies on the layered van der Waals topological crystalline insulator Ta$_2$Pd$_3$Te$_5$. The temperature-dependent resistance at high temperature is dominated by a bulk insulating gap and tend to saturate at low…
Charge transport in amorphous semiconductors is considerably more complicated than process in crystalline materials due to abundant localized states. In addition to device-scale characterization, spatially resolved measurements are…
The weak localization correction to the conductivity in coupled double layer structures is studied both experimentally and theoretically. Statistics of closed paths has been obtained from the analysis of magnetic field and temperature…
We study the weak antilocalization (WAL) effect in the magnetoresistance of narrow HgTe wires fabricated in quantum wells (QWs) with normal and inverted band ordering. Measurements at different gate voltages indicate that the WAL is only…
Quantum interference of electrons in disordered conductors is a sensitive probe of the internal structure of quasiparticles, revealing universal signatures of symmetry through weak localization (WL) and weak antilocalization (WAL). While…
Large reductions of the superconducting transition temperature $T_{c}$ and the accompanying loss of the thermal electrical resistivity (electron-phonon interaction) due to radiation damage have been observed for several A15 compounds,…