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相关论文: Comprehensive Modeling of Graphene Resistivity

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The electron-phonon interaction in monolayer graphene is investigated by using density functional perturbation theory. The results indicate that the electron-phonon interaction strength is of comparable magnitude for all four in-plane…

介观与纳米尺度物理 · 物理学 2015-05-14 K. M. Borysenko , J. T. Mullen , E. A. Barry , S. Paul , Y. G. Semenov , J. M. Zavada , M. Buongiorno Nardelli , K. W. Kim

We present a first-principles study of the temperature- and density-dependent intrinsic electrical resistivity of graphene. We use density-functional theory and density-functional perturbation theory together with very accurate Wannier…

Density functional perturbation theory is used to analyze electron-phonon interaction in bilayer graphene. The results show that phonon scattering in bilayer graphene bears more resemblance with bulk graphite than monolayer graphene. In…

介观与纳米尺度物理 · 物理学 2010-11-29 K. M. Borysenko , J. T. Mullen , X. Li , Y. G. Semenov , J. M. Zavada , M. Buongiorno Nardelli , K. W. Kim

The electron scattering by the short-range defects in the monolayer graphene is considered in the framework of the flatland model. We analyze the effect of this scattering on the electronic resistivity of the monolayer graphene (direct…

介观与纳米尺度物理 · 物理学 2018-10-10 N Firsova , S Ktitorov

We address the two-dimensional band-structure of graphene above the vacuum level in the context of discrete states immersed in the three-dimensional continuum. Scattering resonances are discovered that originate from the coupling of the…

介观与纳米尺度物理 · 物理学 2013-01-31 V. U. Nazarov , V. M. Silkin , E. E. Krasovskii

We review the different results obtained in the last decade in the field of Raman scattering of graphene based systems, with an applied magnetic field. Electronic properties of graphene based systems with an applied magnetic field will…

介观与纳米尺度物理 · 物理学 2018-02-14 C. Faugeras , M. Orlita , M. Potemski

Transmission of low-energetic electrons through two-dimensional materials leads to unique scattering resonances. These resonances contribute to photoemission from occupied bands where they appear as strongly dispersive features of…

材料科学 · 物理学 2017-11-22 M. Krivenkov , D. Marchenko , J. Sánchez-Barriga , O. Rader , A. Varykhalov

The broadband and ultrafast photoresponse of graphene has been extensively studied in recent years, although the photoexcited carrier dynamics is still far from being completely understood. Different experimental approaches imply either one…

介观与纳米尺度物理 · 物理学 2017-08-22 Sergey Menabde , Hyunwoo Cho , Namkyoo Park

Raman scattering (RS) spectra and current-voltage characteristics at room temperature were measured in six series of small samples fabricated by means of electron-beam lithography on the surface of a large size (5x5 mm) industrial monolayer…

介观与纳米尺度物理 · 物理学 2015-01-13 I. Shlimak , A. Haran , E. Zion , T. Havdala , Yu. Kaganovskii , A. V. Butenko , L. Wolfson , V. Richter , D. Naveh , A. Sharoni , E. Kogan , M. Kaveh

Graphite is a well-studied material with known electronic and optical properties. Graphene, on the other hand, which is just one layer of carbon atoms arranged in a hexagonal lattice, has been studied theoretically for quite some time but…

介观与纳米尺度物理 · 物理学 2015-05-13 F. Molitor , D. Graf , C. Stampfer , T. Ihn , K. Ensslin

The in-plane acoustic phonon scattering in graphene is solved by considering fully inelastic acoustic phonon scatterings in two-dimensional (2D) Dirac materials for large range of temperature ($T$) and chemical potential ($\mu$). Rigorous…

介观与纳米尺度物理 · 物理学 2020-04-22 Khoe Van Nguyen , Yia-Chung Chang

Inelastic phonon scattering in graphene field-effect transistors (FETs) is studied by numerically solving the Boltzmann transport equation in three dimensional real and phase spaces (x, kx, ky). A kink behavior due to ambipolar transport…

介观与纳米尺度物理 · 物理学 2015-05-27 Jyotsna Chauhan , Jing Guo

We present a detailed calculation of intensities of two-phonon and four-phonon Raman peaks in graphene. Writing the low-energy hamiltonian of the interaction of electrons with the crystal vibrations and the electromagnetic field from pure…

材料科学 · 物理学 2009-11-13 D. M. Basko

The main features of the conductivity of doped single layer graphene are analyzed, and models for different scattering mechanisms are presented.

介观与纳米尺度物理 · 物理学 2009-11-13 F. Guinea

We report on the temperature dependent electron transport in graphene at different carrier densities $n$. Employing an electrolytic gate, we demonstrate that $n$ can be adjusted up to 4$\times10^{14}$cm$^{-2}$ for both electrons and holes.…

介观与纳米尺度物理 · 物理学 2010-12-14 Dmitri K. Efetov , Philip Kim

We consider a problem of obtaining information about the scattering potentials of the monolayer graphene sample using available experimental data on its resistance. We have in mind a development of the study describing super-high mobility…

介观与纳米尺度物理 · 物理学 2019-07-26 N. E. Firsova. S. A. Ktitorov

The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature $T \gtrsim 10\,\,$K, and the resistivity increases…

We investigated experimentally the high-temperature electrical resistance of graphene interconnects. The test structures were fabricated using the focused ion beam from the single and bi-layer graphene produced by mechanical exfoliation. It…

材料科学 · 物理学 2008-05-24 Q. Shao , G. Liu , D. Teweldebrhan , A. A. Balandin

Declining the lattice thermal conductivity in graphene is essential for its thermoelectric applications. In high electron density systems, scatterings of phonons by electrons are no less than the phonon scatterings by other phonons. With…

材料科学 · 物理学 2019-08-08 Ajit Jena , Wu Li

Magneto-Raman scattering experiments from the surface of graphite reveal novel features associated to purely electronic excitations which are observed in addition to phonon-mediated resonances. Graphene-like and graphite domains are…

介观与纳米尺度物理 · 物理学 2015-05-27 C. Faugeras , M. Amado , P. Kossacki , M. Orlita , M. Kühne , A. A. L. Nicolet , Yu. I. Latyshev , M. Potemski
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