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Device-based tunnel spectroscopy of superconductors was first performed by Giaever, whose seminal work provided clear evidence for the spectral gap in the density of states (DOS) predicted by the Bardeen-Cooper-Schrieffer (BCS) theory.…

We have performed device-based tunnelling spectroscopy of NbSe$_2$ in the vortex state with a magnetic field applied both parallel and perpendicular to the $a-b$ plane. Our devices consist of layered semiconductors placed on top of…

超导电性 · 物理学 2018-12-26 Tom Dvir , Marco Aprili , Charis H. L. Quay , Hadar Steinberg

Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field effect transistors (TFETs) that exploit the tunneling of charge carriers across the forbidden gap of a vdW heterojunction. This…

Tunneling spectroscopy and its evolution are crucial for elucidating the intricate electronic structure and emergent phenomena in quantum materials.Nevertheless, high-quality measurements -- specifically those tracking evolution across…

超导电性 · 物理学 2026-05-22 Yixuan Niu , Jun Cheng , Shiji Ding , Zhongxin Guo , Shang Wang , Chenglong Li , Meining Zhang , Peng Cai

Quantum dots have sharply defined energy levels, which can be used for high resolution energy spectroscopy when integrated in tunneling circuitry. Here we report dot-assisted spectroscopy measurements of the superconductor $NbSe_2$, using a…

超导电性 · 物理学 2021-09-08 T. R. Devidas , Itai Keren , Hadar Steinberg

Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin…

The electronic structure of semiconducting 2D materials such as transition metal dichalcogenides (TMDs) is known to be tunable by its environment, from simple external fields applied with electrical contacts up to complex van der Waals…

Van der Waals (vdW) heterojunctions composed of 2-dimensional (2D) layered materials are emerging as a solid-state materials family that exhibit novel physics phenomena that can power high performance electronic and photonic applications.…

We introduce a novel planar tunneling architecture for van der Waals heterostructures based on via contacts, namely metallic contacts embedded into through-holes in hexagonal boron nitride ($h$BN). We use the via-based tunneling method to…

Control over the electronic spectrum at low energy is at the heart of the functioning of modern advanced electronics: high electron mobility transistors, semiconductor and Capasso terahertz lasers, and many others. Most of those devices…

Miniaturized spectrometers are of immense interest for various on-chip and implantable photonic and optoelectronic applications. State-of-the-art conventional spectrometer designs rely heavily on bulky dispersive components (such as…

We report on fabrication of devices integrating FeTe$_{0.55}$Se$_{0.45}$ with other van-der-Waals materials, measuring transport properties as well as tunneling spectra at variable magnetic fields and temperatures down to 35 mK. Transport…

超导电性 · 物理学 2019-08-28 Ayelet Zalic , Shahar Simon , Sergei Remennik , Atzmon Vakahi , Genda D. Gu , Hadar Steinberg

Van der Waals (vW) Josephson junctions (JJs) realized by stacking materials such as few-layered NbSe2, offers a new landscape to realize superconducting quantum devices with superior properties owing to its crystalline nature and…

介观与纳米尺度物理 · 物理学 2025-01-22 Annu Anns Sunny , H Choubey , A Khola , S Narayanan , R Bharadwaj , P Gireesan , Madhu Thalakulam

Ultra low-loss microwave materials are crucial for enhancing quantum coherence and scalability of superconducting qubits. Van der Waals (vdW) heterostructure is an attractive platform for quantum devices due to the single-crystal structure…

Van der Waals (vdW) Josephson junctions can possibly accelerate the development of advanced superconducting device that utilizes the unique properties of two-dimensional (2D) transition metal dichalcogenide (TMD) superconductors such as…

超导电性 · 物理学 2022-11-17 Chuanwen Zhao , Xin Yi , Qiao Chen , Chengyu Yan , Shun Wang

Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into interfaces and heterostructures. Their potential for…

Van der Waals heterostructures (vdWHs) allow the assembly of high-crystalline two-dimensional (2D) materials in order to explore dimensionality effects in strongly correlated systems and the emergence of potential new physical scenarios. In…

强关联电子 · 物理学 2021-07-13 Carla Boix-Constant , Samuel Mañas-Valero , Rosa Córdoba , Eugenio Coronado

Van der Waals (vdW) heterostructures, stacking different two-dimensional materials, have opened up unprecedented opportunities to explore new physics and device concepts. Especially interesting are recently discovered two-dimensional…

材料科学 · 物理学 2019-09-04 Xinlu Li , Evgeny Y. Tsymbal , Jing-Tao Lü , Jia Zhang , Long You , Yurong Su

Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device…

介观与纳米尺度物理 · 物理学 2019-08-05 Hao Lee , S. Deshmukh , Jing Wen , V. Z. Costa , J. S. Schuder , M. Sanchez , A. S. Ichimura , Eric Pop , Bin Wang , A. K. M. Newaz

Two-dimensional (2D) semiconductors have shown great promise in (opto)electronic applications. However, their developments are limited by a large Schottky barrier (SB) at the metal-semiconductor junction (MSJ), which is difficult to tune by…

介观与纳米尺度物理 · 物理学 2016-04-26 Yuanyue Liu , Paul Stradins , Su-Huai Wei
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