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As a 3D topological insulator, bismuth selenide (Bi2Se3) has potential applications for electrically and optically controllable magnetic and optoelectronic devices. How the carriers interact with lattice is important to understand the…

We introduce a simplified version of the steady-state ab initio laser theory for calculating the effects of mode competition in continuous wave lasers using the passive cavity resonances. This new theory harnesses widely available numerical…

We reported on the generation of femtosecond pulse in an anomalous-dispersion fiber ring laser by using a polyvinyl alcohol (PVA)-based Topological Insulator (TI), Bi2Se3 saturable absorber (SA). The PVA-TI composite has a low saturable…

Quantum anomalous Hall effect (QAHE), which generates dissipation-less edge current without external magnetic field, is observed in magnetic-ion doped topological insulators (TIs), such as Cr- and V-doped (Bi,Sb)2Te3. The QAHE emerges when…

介观与纳米尺度物理 · 物理学 2015-11-06 M. Mogi , R. Yoshimi , A. Tsukazaki , K. Yasuda , Y. Kozuka , K. S. Takahashi , M. Kawasaki , Y. Tokura

Three-dimensional topological insulators (TIs) have emerged as a unique state of quantum matter and generated enormous interests in condensed matter physics. The surfaces of a three dimensional (3D) TI are composed of a massless Dirac cone,…

A chromium-doped saturable absorber fibre stabilizes an otherwise spontaneously chaotic ytterbium- doped fibre laser. This original passively Q-switched all-fibre laser produces sustained and stable trains of smooth pulses at high…

光学 · 物理学 2012-09-17 Bernard Dussardier , Jerome Maria , Pavel Peterka

Placing quantum materials into optical cavities provides a unique platform for controlling quantum cooperative properties of matter, via both weak and strong light-matter coupling. Here we report the experimental evidence of reversible…

Structural, resistivity, thermoelectric power and magneto-transport properties of Cu doped Bi2Te3 topological insulators have been investigated. The occurrence of the tuning of charge carriers from n type to p type by Cu doping at Te sites…

We study how the surface states in the strong topological insulator Bi$_2$Se$_3$ are influenced by finite size effects, and compare our results with those recently obtained for 2D topological insulator HgTe. We demonstrate two important…

介观与纳米尺度物理 · 物理学 2015-05-14 Jacob Linder , Takehito Yokoyama , Asle Sudbø

The field of topological insulators (TIs) is rapidly growing. Concerning possible applications, the search for materials with an easily controllable TI phase is a key issue. The quantum spin Hall effect, characterized by a single pair of…

介观与纳米尺度物理 · 物理学 2012-03-21 Paolo Michetti , Jan C. Budich , Elena G. Novik , Patrik Recher

Exotic and robust metallic surface states of topological insulators (TIs) have been expected to provide a promising platform for novel surface chemistry and catalysis. However, it is still an unprecedented field how TIs affect the activity…

计算物理 · 物理学 2015-09-09 Jianping Xiao , Liangzhi Kou , Chi-Yung Yam , Thomas Frauenheim , Binghai Yan

The surface area of Bi2Te3 thin films was increased by introducing nanoscale porosity. Temperature dependent resistivity and magnetotransport measurements were conducted both on as-grown and porous samples (23 and 70 nm). The longitudinal…

Quantum spin Hall (QSH) insulator materials feature topologically protected edge states that can drastically reduce dissipation and are useful for the next-generation electronics. However, the nonvolatile control of topological edge state…

材料科学 · 物理学 2020-12-30 Hua Bai , Xinwei Wang , Weikang Wu , Pimo He , Zhu'an Xu , Shengyuan A. Yang , Yunhao Lu

Topological insulators (TIs) are an important family of quantum materials that exhibit a Dirac point (DP) in the surface band structure but have a finite band gap in bulk. A large degree of spin-orbit interaction and low bandgap is a…

材料科学 · 物理学 2024-02-22 Thomas K. Reid , S. Pamir Alpay , Alexander V. Balatsky , Sanjeev K. Nayak

The topological magnetoelectric effect (TME) in three-dimensional topological insulators (TIs), described by $\Delta P = \frac{e^2}{2h} N_{\rm Ch}^{(2)} \Delta B$, serves as a condensed-matter realization of the four-dimensional quantum…

介观与纳米尺度物理 · 物理学 2026-03-06 Yuanze Li , Renfei Wang , Yifan Zhang , Jiahao Chen , Yingdong Deng , Jin Xie , Xufeng Kou , Yang Liu , Tian Liang

The recently discovered three dimensional or bulk topological insulators are expected to exhibit exotic quantum phenomena. It is believed that a trivial insulator can be twisted into a topological state by modulating the spin-orbit…

介观与纳米尺度物理 · 物理学 2011-10-24 Su-Yang Xu , Y. Xia , L. A. Wray , D. Qian , Shuang Jia , J. H. Dil , F. Meier , J. Osterwalder , B. Slomski , H. Lin , R. J. Cava , M. Z. Hasan

Using angle resolved photoemission spectroscopy we studied the evolution of the surface electronic structure of the topological insulator $\text{Bi}_2\text{Se}_3$ as a function of water vapor exposure. We find that a surface reaction with…

介观与纳米尺度物理 · 物理学 2011-11-15 Hadj M. Benia , Chengtian Lin , Klaus Kern , Christian R. Ast

Topological Insulators (TIs) exhibit exciting optical properties, which opens up a new pathway to generate ultrashort pulses from fiber lasers. Layered TIs display distinct saturable absorption property due to excited state absorption, as…

材料科学 · 物理学 2021-05-20 Shyamal Mondal , Rounak Ganguly , Krishnakanta Mondal

We measured the response of the surface state spectrum of epitaxial Sb2Te3 thin films to applied gate electric fields by low temperature scanning tunneling microscopy. The gate dependent shift of the Fermi level and the screening effect…

介观与纳米尺度物理 · 物理学 2014-05-07 Tong Zhang , Jeonghoon Ha , Niv Levy , Young Kuk , Joseph Stroscio

Recent development of ultrashort laser pulses allows for optical control of structural and electronic properties of complex quantum materials. The layered transition metal dichalcogenide MoTe2, which can crystalize into several different…

材料科学 · 物理学 2019-05-29 M. Y. Zhang , Z. X. Wang , Y. N. Li , L. Y. Shi , D. Wu , T. Lin , S. J. Zhang , Y. Q. Liu , C. N. Wang , Q. M. Liu , J. Wang , T. Dong , N. L. Wang