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相关论文: Angle Dependent Interlayer Magnetoresistance (ILMR…

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Effects of annealing on chemical vapor deposited graphene are investigated via a weak localization magnetoresistance measurement. Annealing at \SI{300}{\celsius} in inert gases, a common cleaning procedure for graphene devices, is found to…

介观与纳米尺度物理 · 物理学 2021-10-12 Hyungki Shin , Ebrahim Sajadi , Ali Khademi , Silvia Lüscher , Joshua A. Folk

Graphene is perhaps the most prominent "Dirac material," a class of systems whose electronic structure gives rise to charge carriers that behave as relativistic fermions. In multilayer graphene several crystal sheets are stacked such that…

统计力学 · 物理学 2022-12-20 Nathan M Myers , Francisco J. Peña , Natalia Cortés , Patricio Vargas

Lifshitz transition represents a sudden reconstruction of Fermi surface structure, giving rise to anomalies in electronic properties of materials. Such a transition does not necessarily rely on symmetry-breaking and thus is topological. It…

Turbostratic multilayer graphene, composed of randomly twisted and stacked graphene sheets, offers a naturally disordered yet tunable platform for exploring moir\'e physics beyond tedious artificial stacking. Using scanning tunneling…

介观与纳米尺度物理 · 物理学 2025-09-23 Mona Garg , Ankit Kumar , Deepti Rana , Anmol Arya , Aswini R , Umesh Waghmare , G. U. Kulkarni , Goutam Sheet

We investigate the magnetotransport in large area graphene Hall bars epitaxially grown on silicon carbide. In the intermediate field regime between weak localization and Landau quantization the observed temperature-dependent parabolic…

介观与纳米尺度物理 · 物理学 2012-03-21 Johannes Jobst , Daniel Waldmann , Igor V. Gornyi , Alexander D. Mirlin , Heiko B. Weber

Tailoring the interlayer twist angle of bilayer graphene (BLG) has a significant influence on its electronic properties, including superconductivity, topological transitions, ferromagnetic states and correlated insulating states. These…

We present a theoretical description of the interlayer magnetoresistance in the layered Dirac fermion system with the application to the organic conductor \alpha-(BEDT-TTF)_2I_3 under pressure. Assuming a non-vertical interlayer tunneling…

材料科学 · 物理学 2010-04-15 Takao Morinari , Takami Tohyama

We study interlayer exchange interaction in magnetic tunnel junctions with ferroelectric barrier. We focus on the influence of image forces on the voltage dependence of the interlayer magnetic interaction (magneto-electric effect). The…

介观与纳米尺度物理 · 物理学 2018-01-11 O. G. Udalov , I. S. Beloborodov

We theoretically calculate the interaction-induced frictional Coulomb drag resistivity between two graphene monolayers as well as between two graphene bilayers, which are spatially separated by a distance "$d$". We show that the drag…

介观与纳米尺度物理 · 物理学 2011-12-23 E. H. Hwang , Rajdeep Sensarma , S. Das Sarma

We study the effect of Coulomb drag between two closely positioned graphene monolayers. In the limit of weak electron-electron interaction and small inter-layer spacing ($\mu_{1(2)}, T\ll v/d$) the drag is described by a universal function…

介观与纳米尺度物理 · 物理学 2012-08-07 B. N. Narozhny , M. Titov , I. V. Gornyi , P. M. Ostrovsky

A series of kinetic phenomena in metallic multilayers has been considered. The kinetic properties of multilayers differ essentially from the properties of both massive metals and thin films. One of the main reasons of that is the influence…

统计力学 · 物理学 2010-06-09 L. V. Dekhtyaruk , Yu. A. Kolesnichenko , V. G. Peschansky

We study the effects of an in-plane magnetic field on the ground state properties of both gapless and gapped graphene sheets within Random Phase Approximation. The critical magnetic field which leads to a fully spin polarized phase…

介观与纳米尺度物理 · 物理学 2009-08-01 A. Qaiumzadeh , Reza Asgari

Magnetic MXenes are turning out to be an important family of materials for exploring 2D magnetism. However, investigations into the inter-dependence of layer thickness, stacking patterns and magnetism in these materials, from a microscopic…

材料科学 · 物理学 2022-09-23 Himangshu Sekhar Sarmah , Subhradip Ghosh

The recently discovered interlayer Dzyaloshinskii-Moriya interaction (IL-DMI) in multilayers with perpendicular magnetic anisotropy favors the canting of spins in the in-plane direction and could thus enable new exciting spin textures such…

The effect of magnetic field on an ultrathin magnetic topological insulator film with structural inversion asymmetry is investigated. We introduce the phase diagram, calculate the Landau-level spectrum analytically and simulate the…

介观与纳米尺度物理 · 物理学 2016-05-13 Shu-feng Zhang , Hua Jiang , X. C. Xie , Qing-feng Sun

Graphene nanostrips with single or a few layers can be made into bending resonators with extremely high sensitivity to environment changes. In this work we study the effect of interlayer shear on resonant frequencies f of graphene…

介观与纳米尺度物理 · 物理学 2010-12-06 Yilun Liu , Zhiping Xu , Quanshui Zheng

In this work, we establish a theoretical analysis of the emergence of layer-contrasted Nernst response perpendicular to the direction of the temperature gradient in twisted moir\'{e} layers, called layer Nernst effect (LNE). This phenomenon…

超导电性 · 物理学 2024-05-10 Jin-Xin Hu , Chuanchang Zeng , Yugui Yao

The magnetic state of heavy metal Pt thin films in proximity to the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$ has been investigated systematically by means of x-ray magnetic circular dichroism and x-ray resonant magnetic reflectivity…

We report on the experimental results of interlayer magnetoresistance in multilayer massless Dirac fermion system $\alpha$-(BEDT-TTF)$_2$I$_3$ under hydrostatic pressure and its interpretation. We succeeded in detecting the zero-mode Landau…

材料科学 · 物理学 2009-05-01 N. Tajima , S. Sugawara , R. Kato , Y. Nishio , K. Kajita

Transport signatures of exchange gap opening because of magnetic proximity effect (MPE) are reported for bilayer structures of Bi2Se3 thin films on yttrium iron garnet (YIG) and thulium iron garnet (TmIG) of perpendicular magnetic…

应用物理 · 物理学 2019-07-31 S. R. Yang , Y. T. Fanchiang , C. C. Chen , C. C. Tseng , Y. C. Liu , M. X. Guo , M. Hong , S. F. Lee , J. Kwo