相关论文: Current Saturation in Nonmetallic Field Emitters

We present a theoretical study on the high-field charge transport on the surface of Bi$_2$Se$_3$ and reproduce all the main features of the recent experimental results, i.e., the incomplete current saturation and the finite residual…

In this work we investigate a generalized tunneling barrier for planar emitters at zero-temperature. We present the evidence of the emergence of a non-Fowler-Nordheim-type general behavior for the field emission current density in the case…

The Child-Langmuir law is investigated numerically using a fully electromagnetic particle-in-cell code for a closed axially symmetric diode. It is found that the average current transmitted to the anode increases with the injected current…

It has been argued that current saturation in graphene field-effect transistors (GFETs) is needed to get the highest possible maximum oscillation frequency (fmax). This paper numerically investigates whether velocity saturation can help to…

High performance p- and n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) are obtained by using high and low work function metals, Pd and Al as source/drain (S/D) electrodes respectively. Ohmic contacts made to…

Field electron emission (FE) has relevance in many different technological contexts. However, many related technological papers use a physically defective elementary FE equation for local emission current density (LECD). This equation takes…

Electron field emission characteristics of individual multiwalled carbon nanotubes have been investigated by a piezoelectric nanomanipulation system operating inside a scanning electron microscopy chamber. The experimental setup ensures a…

Charge traps in the semiconductor bulk (bulk charge traps) make it difficult to predict the electric field within wide-bandgap semiconductors. The issue is the daunting number of bulk charge-trap candidates which means the treatment of bulk…

The electron field emission of patterned films of nitrogenated carbon nanotubes is shown to be decisively influenced by the deposition conditions. The growth was carried out by decomposing methane in a nitrogen/ammonia atmosphere using hot…

A model is constructed to describe the thermal-field emission of electrons from a three-dimensional ($3$D) topological semimetal hosting Dirac/Weyl node(s). The traditional thermal-field electron emission model is generalised to accommodate…

Field electron emission (FE) from a structure-defined single-walled carbon nanotube (SWNT) was observed experimentally. A series of observations of the same SWNT by scanning electron microscopy, field emission microscopy and transmission…

Field emission (FE) and the electronic-states origin of graphitic nanostructures were investigated by first-principles calculations based on time-dependent density-functional theory. We find that the FE current from graphitic ribbons…

Carrier conduction in wide bandgap semiconductors (WBS) often exhibits velocity saturation at the high-electric field regime. How such effect influences the transition between contact-limited and space-charge-limited current in a…

The ability to control electronic properties of a material by externally applied voltage is at the heart of modern electronics. In many cases, it is the so-called electric field effect that allows one to vary the carrier concentration in a…

We report the observation and characterization of field emission current from individual single- and few-layer graphene flakes laid on a flat SiO2/Si substrate. Measurements were performed in a scanning electron microscope chamber equipped…

Using low-resistance electrical contacts, we have measured the intrinsic high-field transport properties of metallic single-wall carbon nanotubes. Individual nanotubes appear to be able to carry currents with a density exceeding 10^9…

The time evolution and saturation of the Weibel instability at the ion Alfv\'en current are presented by ab initio particle-in-cell simulations. We found that the ion Weibel current in 3D could evolve into the Alfv\'en current where the…

The Fowler-Nordheim tunneling current formula has been widely used in the design of devices based on metal/insulator (metal/semiconductor) heterojunctions with triangle potential barriers, such as the flash memory. Here we adopt the model…

In this paper, a phenomenological theory of saturated ferromagnetoelastic conductors is established using a multi-continuum model and the classical laws of mechanics, thermodynamics and electromagnetics. The theory is nonlinear and is valid…

We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP and Ge in THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of…