相关论文: GaZn-VZn acceptor complex defect in Ga-doped ZnO

Studies of the structural, electronic, and optical characteristics of the interfaces between graphene and ZnO polar surfaces is carried out using first-principles simulations. At the interface, a strong van der Waals force is present, and…

Spin coating technique was used to synthesize pure ZnO and Cu doped ZnO films on amorphous and conducting glass substrates. The doped amount of Cu in ZnO was varied up to 5% in atomic percentage. Speed of spin coating system, coating time,…

This study investigates the ground-state energetics and thermodynamics of intrinsic point defects in zinc phosphide Zn$_3$P$_2$ using \emph{ab initio} density functional theory combined with an extensive potential energy landscape search.…

Both hexagonal wurtzite and cubic zinc blend GaN phases were synthesized in GaAs by 50 keV N+ implantation at 400 deg C and subsequent annealing at 900 deg C for 15 min in N2 ambient. Crystallographic structural and Raman scattering studies…

We develop ZnO/p-Si photodetectors by atomic layer deposition (ALD) of ZnO thin films on laser-microstructured silicon and we investigate their electrical and optical behavior, demonstrating high sensitivity and broadband operation.…

We report accurate energetics of defects introduced in GaN on doping with divalent metals, focussing on the technologically important case of Mg doping, using a model which takes into consideration both the effect of hole localisation and…

Large reflection losses at interfaces in light emitting semiconductor devices cause a significant reduction in their light emission and energy efficiencies. Metal nanoparticle (NP) surface coatings have been demonstrated to increase the…

The N/Z dependence of projectile fragmentation at relativistic energies has been studied in a recent experiment at the GSI laboratory with the ALADiN forward spectrometer coupled to the LAND neutron detector. Besides a primary beam of…

In this letter, we have investigated the third-order optical nonlinearities of high-quality Ni doped ZnO nanorods crystallized in wurtzite lattice, prepared by the wet chemical method. In our experiments, we found that the two photon…

Crystalline wurtzite zinc oxide (w-ZnO) can be used as a wide band gap semiconductor for light emitting devices and for transparent or high temperature electronics. The use of amorphous zinc oxide (a-ZnO) can be an advantage in these…

The room temperature hole conductivity of the ultra wide bandgap semiconductor beta Ga2O3 is a pre-requisite for developing the next-generation electronic and optoelectronic devices based on this oxide. In this work, high-quality p-type…

In this work we use density functional theory (DFT) to investigate the influence of semi-local exchange and correlation effects on the electronic and optical properties of zinc oxide. We find that the inclusion of such effects using the…

In light of recent advancements in energy technology, there is an urgent need for lead-free barium titanate (BTO) -based materials that exhibit remarkable ferroelectric and photoelectric properties. Notwithstanding the considerable…

We observe unusually narrow donor-bound exciton transitions (0.4 meV) in the photoluminescence spectra of GaN nanowire ensembles grown on Si(111) substrates at very high (> 850 degrees Celsius) temperatures. The spectra of these samples…

Recent \textit{ab initio} calculations predict 1D dispersive electronic bands confined to the atomic scale cores of dislocations in the wide bandgap (3.84 eV) semiconductor ZnS. We test these predictions by correlating sub-bandgap optical…

UV sensing in pure ZnO is due to oxygen adsorption/desorption process from ZnO surface. Vanadium doping improves UV sensitivity of ZnO. Enhancement in UV sensitivity in doped ZnO is attributed to trapping and de-trapping of electrons at V4+…

We investigate charge transfer in prototypical molecular donor-acceptor compounds using hybrid density functional theory (DFT) and the GW approximation at the perturbative level (G0W0) and at full self-consistency (sc-GW). For the systems…

The Zn K-edge X-ray absorption spectroscopy has been used to investigate in situ the decomposition of zinc peroxide (ZnO$_2$) to zinc oxide (ZnO). Principal component and linear combination analyses of the EXAFS spectra have been employed…

Quantum dots have found applications across the semiconductor and biotechnology industries, improving energy efficiency, color purity, and imaging capability. However, the standard quantum dot relies on a heavy metal architecture, which has…

Determining defect types and concentrations remains a big challenge of semiconductor materials science. By using ab-initio thermal conductivity calculations we reveal that Ni/vacancy antisites, and not the previously claimed Sn/Zr…