相关论文: GaZn-VZn acceptor complex defect in Ga-doped ZnO
In Fe-based superconductors, electron doping is often realized by the substitution of transition-metal atoms for Fe. In order to investigate how the electronic structure of the parent compound is influenced by Zn substitution, which…
In order to study the novel gas detection or sensing applications of gallium nitride monolayer (GaN-ML), we mainly focused on the structural, energetic, electronic and magnetic properties of toxic gas molecules (CO, NO) adsorbed on…
We demonstrate a zero-bias ultraviolet (UV) detector using zinc oxide (ZnO) thin films as the active semiconductor layer, specifically for application in cryogenic conditions. The zero-bias device utilizes the piezoelectric potential…
The prospects of scaling current photovoltaic technologies to terawatt levels remain uncertain. All-oxide photovoltaics could open rapidly scalable manufacturing routes, if only oxide materials with suitable electronic and optical…
We show a way to pattern the visible electroluminescence of solution-processed mesoporous ZnO layers. Our approach consists in locally changing the nanoscale morphology of the coated ZnO layers by patterning the underlying surface with thin…
We report growth of high quality ZnO/Zn0.8Mg0.2O quantum well on M-plane oriented ZnO substrates. The optical properties of these quantum wells are studied by using reflectance spectroscopy. The optical spectra reveal strong in-plane…
The structure-property relation of nanostructured Al-doped ZnO thin films has been investigated in detail through a systematic variation of structure and morphology, with particular emphasis on how they affect optical and electrical…
The intrinsic optical properties and peculiarities of the energy structure of hafnium dioxide largely determine the prospects for applying the latter in new generation devices of optoelectronics and nanoelectronics. In this work, we have…
ZnO nano particles are synthesized at different percentages of Ag dopant by facile precipitation method. Two photon absorption (2PA) cross-section and nonlinear refractive index of ZnO nano particles are studied with 130 femto-second laser…
Ta$_{3}$N$_{5}$ is among the most intensively studied photoanode materials for solar-driven water oxidation, yet its performance often remains limited by short carrier lifetimes and defect mediated recombination. Although transient…
The study uses AACVD technology with nitrogen carrier gas to make AZO thin films through which it determines structural, optical, and morphological changes from 0 to 20 percent aluminum doping. The depositions took place at 400 degrees…
Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the properties. Here, we report the first direct microscopic…
Organic Zener diodes with a precisely adjustable reverse breakdown from -3 V to -15 V without any influence on the forward current-voltage curve are realized. This is accomplished by controlling the width of the charge depletion zone in a…
Avalanche photodiodes used for greenhouse gas sensing often use a mesa-structure that suffers from high surface leakage currents and edge breakdown. In this paper, we report 2-micron InGaAs/GaAsSb superlattice (SL) based planar PIN diodes…
Using hybrid density functional theory, we address point defects susceptible to cause charge compensation upon Mg doping of GaN. We determine the free energy of formation of the nitrogen vacancy and of several Mg-related defects. The…
We generalize and systematize basic experimental data on optical and luminescence properties of ZnO single crystals, thin films, powders, ceramics, and nanocrystals. We consider and study mechanisms by which two main emission bands occur, a…
Reversible control of the photoluminescence of ZnO occurring in the visible range, has been achieved by application of a few volts (< 5V) to a device consisting of nanostructured ZnO film sandwiched between Indium Tin Oxide electrode and…
We have studied the high-frequency properties of the non-equilibrium electron gas in GaN samples subjected to electric and magnetic fields. Spectra of the complex tensor of the dynamical mobility have been calculated for THz frequency…
We present a comprehensive study of the energetics and magnetic properties of ZnO clusters doped with 3d transition metals (TM) using ab initio density functional calculations in the framework of generalized gradient approximation + Hubbard…
Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor $\beta$-$Ga_2O_3$ could strongly influence and contribute to the development of the next generation of…