相关论文: Asymmetric Electron-Hole Decoherence in Ion-Gated …
Observations of electron-hole asymmetry in transport through graphene devices at high magnetic field challenge prevalent models of the graphene quantum Hall effect. Here, we study this asymmetry both in conventional magnetotransport and in…
The electron hole asymmetry has been measured in natural graphite using magneto-optical absorption measurements. A splitting is observed for the transitions at both the $K$-point and the $H$-point of the Brillouin zone of graphite where the…
Electron-hole asymmetry is a fundamental property in solids that can determine the nature of quantum phase transitions and the regime of operation for devices. The observation of electron-hole asymmetry in graphene and recently in the phase…
The electron-hole symmetry in the structure "graphene - insulating substrate -semiconductor gate" is violated due to an asymmetrical drop of potential in the semiconductor gate under positive or negative biases. The gate voltage…
We report on magneto-transport measurement in disordered graphene under pulsed magnetic field of up to 57T. For large electron or hole doping, the system displays the expected anomalous Integer Quantum Hall Effect (IQHE) specific to…
Spin-dependent properties of single-layer graphene (SLG) have been studied by non-local spin valve measurements at room temperature. Gate voltage dependence shows that the non-local magnetoresistance (MR) is proportional to the conductivity…
Collisions between electrons and holes can dominate the carrier scattering in clean graphene samples in the vicinity of charge neutrality point. While electron-hole limited resistance in pristine gapless graphene is well-studied, its…
We report electron-hole conduction asymmetry in monolayer graphene. Previously, it has been claimed that electron-hole conduction asymmetry is due to imbalanced carrier injection from metallic electrodes. Here, we show that metallic…
Graphitic nitrogen-doped graphene is an excellent platform to study scattering processes of massless Dirac fermions by charged impurities, in which high mobility can be preserved due to the absence of lattice defects through direct…
In the recent years many researches were performed about graphene. Graphene is always considered a half metal or a zero gap semiconductor. In the last year new experiments were done about graphene on boron nitride and they obtained an…
We report measurements of magnetoresistance in bilayer graphene as a function of gate voltage (carrier density) and temperature. We examine multiple contributions to the magnetoresistance, including those of weak localization (WL),…
A theoretical model is proposed to describe asymmetric gate-voltage dependence of conductance and noise in two-terminal ballistic graphene devices. The model is analyzed independently within the self-consistent Hartree and Thomas-Fermi…
We investigate decoherence of an electron in graphene caused by electron-flexural phonon interaction. We find out that flexural phonons can produce dephasing rate comparable to the electron-electron one. The problem appears to be quite…
We separate localization and interaction effects in epitaxial graphene devices grown on the C-face of a 4H-SiC substrate by analyzing the low temperature conductivities. Weak localization and antilocalization are extracted at low magnetic…
We have investigated a new feature of impurity cyclotron resonances common to various localized potentials of graphene. A localized potential can interact with a magnetic field in an unexpected way in graphene. It can lead to formation of…
We investigate weak localization in metallic networks etched in a two dimensional electron gas between $25\:$mK and $750\:$mK when electron-electron (e-e) interaction is the dominant phase breaking mechanism. We show that, at the highest…
We study electromagnetic properties of a double layer graphene system in which electrons from one layer are coupled with holes from the other layer. The gauge invariant linear response functions are obtained. The frequency dependences of…
Band structure determines the motion of electrons in a solid, giving rise to exotic phenomena when properly engineered. Drawing an analogy between electrons and photons, artificially designed optical lattices indicate the possibility of a…
We present a hydrodynamic theory for electron-hole magnetotransport in graphene incorporating carrier-population imbalance, energy, and momentum relaxation processes. We focus on the electric response and find that the carrier and energy…
We propose a hydrodynamic model describing steady-state and dynamic electron and hole transport properties of graphene structures which accounts for the features of the electron and hole spectra. It is intended for electron-hole plasma in…