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How a Mott insulator develops into a weakly coupled metal upon doping is a central question to understanding various emergent correlated phenomena. To analyze this evolution and its connection to the high-$T_c$ cuprates, we study the…

We study the electronic structure of the doped paramagnetic insulator by finite temperature Quantum Monte-Carlo simulations for the 2D Hubbard model. Throughout we use the moderately high temperature T=0.33t, where the spin correlation…

强关联电子 · 物理学 2007-05-23 C. Groeber , M. G. Zacher , R. Eder

A central question in the high temperature cuprate superconductors is the fate of the parent Mott insulator upon charge doping. Here we use scanning tunneling microscopy to investigate the local electronic structure of lightly doped cuprate…

超导电性 · 物理学 2017-02-21 Peng Cai , Wei Ruan , Yingying Peng , Cun Ye , Xintong Li , Zhenqi Hao , Xingjiang Zhou , Dung-Hai Lee , Yayu Wang

The effect of proximity to a Mott insulating phase on the charge transport properties of a superconductor is determined. An action describing the low energy physics is formulated and different scenarios for the approach to the Mott phase…

强关联电子 · 物理学 2009-11-07 L. B. Ioffe , A. J. Millis

The phase diagram of the high-Tc cuprates is dominated by the Mott insulating phase of the parent compounds. As we approach it from large doping, a standard Fermi-liquid gradually turns into a bad non-Fermi liquid metal, a process which…

强关联电子 · 物理学 2014-04-29 Luca de' Medici , Gianluca Giovannetti , Massimo Capone

How superconductivity emerges in the vicinity of an antiferromagnetic insulating state is a long-standing issue of strong correlation physics. We study the transition from an antiferromagnetic insulator to a superconductor by hole-doping…

强关联电子 · 物理学 2022-08-16 Tianxing Ma , Da Wang , Congjun Wu

We present results of a systematic Quantum-Monte-Carlo study for the single-band Hubbard model. Thereby we evaluated single-particle spectra (PES & IPES), two-particle spectra (spin & density correlation functions), and the dynamical…

强关联电子 · 物理学 2009-10-31 C. Groeber , R. Eder , W. Hanke

We study the electronic state of the doped Mott-Hubbard insulator within Dynamical Mean Field Theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both…

强关联电子 · 物理学 2009-11-11 A. Camjayi , R. Chitra , M. J. Rozenberg

We study the phase diagram of a one-dimensional Hubbard model where, in addition to the standard nearest neighbor hopping $t$, we also include a next-to-nearest neighbor hopping $t'$. For strong enough on-site repulsion, this model has a…

凝聚态物理 · 物理学 2009-10-28 Michele Fabrizio

In this work we investigate doping and temperature dependences of electronic structure of system with strong electronic correlations and strong electron-phonon interaction modeling cuprates in the frameworks of the three-band p-d-Holstein…

强关联电子 · 物理学 2016-12-09 I. A. Makarov , S. G. Ovchinnikov

Cooperation and competition between the antiferromagnetic, d-wave superconducting and Mott-insulating states are explored for the two-dimensional Hubbard model including nearest and next-nearest-neighbor hoppings at zero temperature. Using…

强关联电子 · 物理学 2007-12-11 M. Aichhorn , E. Arrigoni , M. Potthoff , W. Hanke

We analyze enhancements in the magnitude of the self-energy for electrons far away from the Fermi surface in doped Mott insulators using the dynamical cluster approximation to the Hubbard model. For large onsite repulsion, U, and hole…

强关联电子 · 物理学 2016-01-11 J. Merino , O. Gunnarsson , G. Kotliar

We study the effects of hole doping on the two-dimensional Heisenberg-Kondo model around the quantum critical point, where the spin liquid phase (Kondo insulator) and the magnetically ordered phase are separated via a second-order phase…

强关联电子 · 物理学 2009-11-10 Y. Saito , A. Koga , N. Kawakami

We investigate the effect of hole doping on the strong-coupling Hubbard model at half-filling in spatial dimensions $D\ge 1$. We start with an antiferromagnetic mean-field description of the insulating state, and show that doping creates…

凝聚态物理 · 物理学 2009-10-28 Junwu Gan , Dung-Hai Lee , Per Hedegard

A variational Monte Carlo calculation is used for studying the ground state of the two-dimensional Hubbard model, including hopping between both nearest and next-nearest neighbor sites. Superconductivity with d-wave symmetry is found to be…

强关联电子 · 物理学 2008-08-05 D. Eichenberger , D. Baeriswyl

The paramagnetic phase of the one-band Hubbard model is studied at zero-temperature, within the framework of dynamical mean-field theory, and for general particle-hole asymmetry where a doping-induced Mott transition occurs. Our primary…

强关联电子 · 物理学 2016-02-01 David E. Logan , Martin R. Galpin

We apply the recently developed slave fermion approach to study the doped Mott insulator in the one-band Hubbard and Hubbard-Heisenberg models. Our results produce several subtle features in the electron spectra and confirm the key role of…

强关联电子 · 物理学 2023-10-19 Zhuoqing Long , Jiangfan Wang , Yi-feng Yang

In the framework of cluster perturbation theory for the 2D Hubbard and Hubbard-Holstein models at low hole doping we have studied the effect of local and short-range correlations in strongly correlated systems on the anomalous features in…

强关联电子 · 物理学 2019-02-05 V. I. Kuz'min , S. V. Nikolaev , S. G. Ovchinnikov

In this work, we investigate impurity-induced Friedel oscillations in the doped two-dimensional Hubbard model, focusing on the role of holon and doublon excitations. We show that weak impurities, due to the non-fermionic nature of the…

强关联电子 · 物理学 2025-10-23 Anurag Banerjee , Emile Pangburn , Catherine Pépin , Cristina Bena

Unravelling the nature of doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. For this purpose, we study the evolution of…

强关联电子 · 物理学 2018-03-14 Yao Wang , Brian Moritz , Cheng-Chien Chen , Thomas P. Devereaux , Krzysztof Wohlfeld
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