相关论文: Photoconductive response of strained silicon nanow…

Due to its low bandgap and high optical efficiency, tellurium is considered an important material candidate for mid-infrared applications. Taking advantage of its structural anisotropy, we fabricated tellurium nanowire devices and…

We show that avoiding bends in a current-carrying superconducting nanowire enhances the probability for low energy photons to be detected and that this enhancement is entirely due to the increase in the experimentally achievable critical…

Low dimensional systems, nanowires, in particular, have exhibited excellent optical and electronic properties. Understanding the thermal properties in semiconductor nanowires is very important for their applications in their electronic…

The thermal conductance of straight and corrugated monocrystalline silicon nanowires has been measured between 0.3 K and 5 K. The difference in the thermal transport between corrugated nanowires and straight ones demonstrates a strong…

The effects of very low temperature on the electron transport in a [110] and [100] axially aligned unstrained silicon nanowires (SiNWs) are investigated. A combination of semi-empirical 10-orbital tight-binding method, density functional…

Understanding the movement of charge within organic semiconducting films is crucial for applications in photo-voltaics and flexible electronics. We study the sensitivity of the electrical conductance of a silicon nanowire to changes of…

The low-field electron mobility in rectangular silicon nanowire (SiNW) transistors was computed using a self-consistent Poisson-Schr\"{o}dinger-Monte Carlo solver. The behavior of the phonon-limited and surface-roughness-limited components…

The nonlinear characteristics of hydrogenated amorphous silicon nanowires are experimentally demonstrated. A high nonlinear refractive index, n2=1.19 x 10-17 m2/W, combined with a low two-photon absorption, 0.14 x 10-11 m/W, resulted in a…

We report for the first time a large photoresponse in an array of charge transfer complex Cu:TCNQ nanowires (average diameter 30 nm) fabricated as a nanobridge device. The device shows highest photoresponse for excitation with 405 nm light…

Photons typically do not contribute to thermal transport within a solid due to their low energy density and tendency to be quickly absorbed. We propose a practical material system - infrared plasmonic resonators embedded in a semiconductor…

Silicon nanoparticles have the promise to surpass the theoretical efficiency limit of single-junction silicon photovoltaics by the creation of a "phonon bottleneck", a theorized slowing of the cooling rate of hot optical phonons that in…

Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable bandgap energy and directness. Herein, we exploit these attributes along with the enhanced lattice…

In nanostructures phonon transport behaviour is distinctly different to transport in bulk materials such that materials with ultra low thermal conductivities and enhanced thermoelectric performance can be realized. Low thermal…

Photo-gated transistors based on dye-sensitized nanocrystalline titanium dioxide thin film are established. A transistor-like transport behavior characterized by the linear increase, saturated plateau, and breakdown-like increase in the…

We present femtosecond transient transmission (or absorbance) measurements in silicon nanowires in the energy range 1.1-3.5 eV, from below the indirect band-gap to above the direct band-gap. Our pump-probe measurements allow us to give a…

Featured with a plethora of electric and magnetic Mie resonances, high index dielectric nanostructures offer a versatile platform to concentrate light-matter interactions at the nanoscale. By integrating unique features of far-field…

We report a high Responsivity broad band photo-detector working in the wavelength range 400 nm to 1100 nm in a horizontal array of Si microlines (line width ~1 micron) fabricated on a Silicon-on-Insulator (SOI) wafer. The array was made…

By coupling silicon nanowires (~150 nm diameter, 20 micron length) with an {\Omega}-shaped plasmonic nanocavity we are able to generate broadband visible luminescence, which is induced by high-order hybrid nanocavity-surface plasmon modes.…

Semiconductor nanowires are attractive for photovoltaic applications because light absorption can be enhanced compared to planar layers due to the more complex coupling of light with wavelength-scale matter. However, experimentally it is…

Generally, a superconducting nanowire single-photon detector (SNSPD) is composed of wires with a typical width of ~100 nm. Recent studies have found that superconducting strips with a micrometer-scale width can also detect single photons.…