相关论文: Modeling of hysteresis loop and its applications i…
In published papers, the Gibbs free energy of ferroelectric materials has usually been quantified by the retention of 6th or 8th order polarization terms. In this paper, a newly analytical model of Gibbs free energy, thereout, a new model…
Description of domains switching processes in crystalline ferroelectrics by means of relaxation type equations with account of variable external electric field is proposed. Exact solution of these equations in closed analytical form at…
The kinetic theory of switching processes in crystalline ferroelectric materials under the influence of a variable external electric field is formulated. The basic equations are derived and their exact analytical solution at arbitrary…
An efficient cooling effect is put forward, by means of external electric or magnetic fields along hysteresis loops. A simplified model of hysteresis is used for numerical illustration. The model is based upon a second-order expansion of…
With the advent of increasingly elaborate experimental techniques in physics, chemistry and materials sciences, measured data are becoming bigger and more complex. The observables are typically a function of several stimuli resulting in…
We have proposed the phenomenological description of dielectric hysteresis loops in ferroelectric semiconductors with charged defects and prevailing extrinsic conductivity. Exactly we have modified Landau-Ginsburg approach and shown that…
We propose a hysteretic model for electromechanical coupling in piezoelectric materials, with the strain and the electric field as inputs and the stress and the polarization as outputs. This constitutive law satisfies the thermodynamic…
Antiferroelectrics exhibit unique double-hysteresis polarization loops, which have garnered significant attention due to their potential applications such as energy storage, electromechanical transduction, as well as synapse devices.…
Recently introduced model of magnetic hysteresis was extended into set of the following features: frequency, pick of induction and temperature of specimen. Group theoretical classification of hysteresis loops' sets is presented. An effect…
Emergent functionalities of structural and topological defects in ferroelectric materials underpin an extremely broad spectrum of applications ranging from domain wall electronics to high dielectric and electromechanical responses. Many of…
Ferroelectric interfaces are unique model objects for fundamental studies of polar surface properties such as versatile screening mechanisms of spontaneous polarization by free carriers and possible ion exchange with ambient media. The…
The connection between hysteresis and thermal relaxation in magnetic materials is studied from both the experimental and the theoretical viewpoint. Hysteresis and viscosity effects are measured in Finemet-type nanocrystalline materials…
Piezoelectricity of some materials has shown to have many applications, in particular in energy harvesting. Due to the inherent hysteresis in the characteristic of such materials, a number of hysteretic models have been proposed minding the…
We consider three mechanisms of hysteresis phenomena in alternating magnetic field: the domain wall motion in a random medium, the nucleation and the retardation of magnetization due to slow (critical) fluctuations. We construct…
A new mathematical model of hysteresis loop has been derived. Model consists in an extansion of tanh($\cdot$) by extanding the base of exp function into an arbitrary positive number. The presented model is self-similar and invariant with…
A number of improvements have been added to the existing analytical model of hysteresis loop defined in parametric form. In particular, three phase shifts are included in the model, which permits to tilt the hysteresis loop smoothly by the…
We describe ferroelectric thin films with circular electrodes and develop a thermodynamic theory that explains previously mysterious experiments. It is found to be especially useful for restricted geometries such as microstructures for…
This paper combines experimental and modelling studies to provide a detailed examination of the influence of porosity volume fraction and morphology on the polarisation-electric field response of ferroelectric materials. The broadening of…
Antiferroelectrics attract broad attention due to their unusual physical characteristics, chief among which is the double-hysteresis loop that separates their antipolar ground state from the voltage-induced polar phase, which is promising…
We have modified Landau-Khalatnikov approach and shown that both the polar lattice and the screened charged defects determine the response of disordered ferroelectric-semiconductors. This system exhibits the spatially inhomogeneous…