相关论文: Island dynamics and anisotropy during vapor phase …

We study the dynamics and morphology of grain growth with anisotropic energy and mobility of grain boundaries using a generalized phase field model. In contrast to previous studies, both inclination and misorientation of the boundaries are…

Self-assembled Ge islands were grown on stripe-patterned Si (001) substrates by solid source molecular beam epitaxy. The surface morphology obtained by atomic force microscopy (AFM) and cross-sectional transmission electron microscopy…

This brief report examines the influence of Ga/N flux conditions on Mn incorporation in GaN. Mn-doped GaN layers were grown at 680$^{\circ}$C by molecular beam epitaxy on a Ga-polar GaN(0001) template substrate under Ga-rich, N-rich, and…

Grazing incidence anomalous x-ray scattering was used to monitor in situ the molecular beam epitaxy growth of GaN/AlN quantum dots (QDs). The strain state was studied by means of grazing incidence Multi-wavelength Anomalous Di raction (MAD)…

Recent experiments show that the islanding behavior during chemical vapor deposition (CVD) of Si on Si(111) using disilane (Si${_2}$H${_6}$) is quite different from that due to molecular beam epitaxy (MBE). While the latter can be…

We have investigated InGaAs layers grown by molecular-beam epitaxy on GaAs(001) by transmission electron microscopy (TEM) and photoluminescence spectroscopy. InGaAs layers with In-concentrations of 16, 25 and 28 % and respective thicknesses…

Recent interest in very thin single phase Ga1-xMnxN dilute magnetic layers increased needs for precise, non-destructive, and relatively fast characterization methods with key issues being the macroscopic lateral Mn distribution and the…

We study the formation and evolution of coherent islands on lattice mismatched epitaxially strained films. Faceted islands form in films with aniostropic surface tension. Under annealing, these islands ripen until a stable array is formed,…

Step meandering during growth of gallium nitride (0001) surface is studied using kinetic Monte Carlo method. Simulated growth process, conducted in N-rich conditions are therefore controlled by Ga atoms surface diffusion. The model employs…

Growth of atomic indium chains - 1D islands - on the Si(100)-2x1 surface was observed by scanning tunneling microscopy (STM) at room temperature and simulated by means of a kinetic Monte Carlo method. Density of indium islands and island…

The effect of impurities on epitaxial growth in the submonolayer regime is studied using kinetic Monte Carlo simulations of a two-species solid-on-solid growth model. Both species are mobile, and attractive interactions among adatoms and…

Clean Si(111)-(7{x7) surfaces, followed by air-exposure, have been investigated by reflection high energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Fourier transforms (FTs) of STM images show the presence of…

We present a theoretical survey of magnetocrystalline anisotropies in (Ga,Mn)As epilayers and compare the calculations to available experimental data. Our model is based on an envelope function description of the valence band holes and a…

Single layer graphene islands with a typical diameter of several nanometers were grown on a Pt (111) substrate. Scanning tunneling microscopy (STM) analysis showed most of islands are hexagonally shaped and the zigzag-type edge predominates…

We studied the growth and ordering of a Pb layer deposited on Cu(001) at 150 K. Contrary to the case of adsorption of Pb at room temperature, islands readily form. These islands order in a high-order commensurate structure of symmetry (…

Using a microscopic finite-cluster tight-binding model, we investigate the trend of the magnetic anisotropy energy as a function of the cluster size for an individual Mn impurity positioned in the vicinity of the (110) GaAs surface,We…

We use a multiscale approach to study a lattice-gas model of submonolayer growth of Fe/Mo(110) by Molecular Beam Epitaxy. To begin with, we construct a two-dimensional lattice-gas model of the Fe/Mo(110) system based on first-principles…

The nucleation and growth of two--dimensional islands is studied with Monte Carlo simulations of a pair--bond solid--on--solid model of epitaxial growth. The conventional description of this problem in terms of a well--defined critical…

The purpose of this paper is to report some new experimental and theoretical results about the analysis of in-plane lattice spacing oscillations during two-dimensional (2D) homo and hetero epitaxial growth. The physical origin of these…

We study the dynamical properties of spherical galaxies with surface luminosity profile described by the R^{1/m}-law, in which a variable degree of orbital anisotropy is allowed. The parameter m for the present models covers the range…