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We investigate the transport of electrons in disordered and pristine graphene devices. Fano shot noise, a standard metric to assess the mechanism for electronic transport in mesoscopic devices, has been shown to produce almost the same…

介观与纳米尺度物理 · 物理学 2013-09-18 Mario F. Borunda , H. Hennig , Eric J. Heller

What level of scientific knowledge has been gained against COVID-19 during the months of the pandemic? Are current technologies able to keep up with the advances in virology research? Historically, disease outbreaks due to pathogenic…

应用物理 · 物理学 2020-11-05 Giuseppina Simone

Electron-electron (e-e) collisions can impact transport in a variety of surprising and sometimes counterintuitive ways. Despite strong interest, experiments on the subject proved challenging because of the simultaneous presence of different…

The ultrafast response and broadband absorption of all-optical graphene switches are highly desirable features for on-chip photonic switching. However, because graphene is an atomically thin material, its absorption of guided optical modes…

Due to its strong bonds graphene can stretch up to 25% of its original size without breaking. Furthermore, mechanical deformations lead to the generation of pseudo-magnetic fields (PMF) that can exceed 300 T. The generated PMF has opposite…

介观与纳米尺度物理 · 物理学 2017-11-22 Slavisa P. Milovanovic , Francois M. Peeters

We demonstrate a fabrication scheme for clean suspended structures using chemical-vapor-deposition-grown graphene and a dry transfer method on lift-off-resist-coated substrates to facilitate suspended graphene nanoelectronic devices for…

介观与纳米尺度物理 · 物理学 2019-05-22 Ying Liu , T. S. Abhilash , Antti Laitinen , Zhenbing Tan , Guan-jun Liu , Pertti Hakonen

Epitaxial graphene on silicon carbide, or epigraphene, provides an excellent platform for Hall sensing devices in terms of both high electrical quality and scalability. However, the challenge in controlling its carrier density has thus far…

Graphene demonstrated potential for practical applications owing to its excellent electronic and thermal properties. Typical graphene field-effect transistors and interconnects built on conventional SiO2/Si substrates reveal the breakdown…

材料科学 · 物理学 2015-06-04 Jie Yu , Guanxiong Liu , Anirudha V. Sumant , Vivek Goyal , Alexander A. Balandin

Electronic carriers in graphene show a high carrier mobility at room temperature. Thus, this system is widely viewed as a potential future charge-based high-speed electronic-material to complement- or replace- silicon. At the same time, the…

介观与纳米尺度物理 · 物理学 2012-12-04 R. G. Mani , J. Hankinson , C. Berger , W. A. de Heer

Position-sensitive-detectors (PSDs) based on lateral photoeffect has been widely used in diverse applications, including optical engineering, aerospace and military fields. With increasing demand in long distance, low energy consumption,…

介观与纳米尺度物理 · 物理学 2017-10-31 Wen-Hui Wang , Ru-Xia Du , Xi-Tao Guo , Jie Jiang , Wei-Wei Zhao , Zhong-Hua Ni , Xin-Ran Wang , Yu-Meng You , Zhen-Hua Ni

A novel mediator-free, non-enzymatic electrochemical sensor, based on a graphene-Schottky junction, was fabricated for glucose detection. The sensor offers a promising alternative to the conventional enzyme-catalyzed electrochemical…

化学物理 · 物理学 2015-09-09 Mohamed Serry , M. A. Sakr

Graphene-based electromechanical resonators have attracted much interest recently because of the outstanding mechanical and electrical properties of graphene and their various applications. However, the coupling between mechanical motion…

介观与纳米尺度物理 · 物理学 2017-05-16 Gang Luo , Zhuo-Zhi Zhang , Guang-Wei Deng , Hai-ou Li , Gang Cao , Ming Xiao , Guoping Guo , Guang-Can Guo

In this work we combine a Fin Field Effect Transistor (Fin-FET) characterised by a high height to width aspect ratio with high-k dielectric materials to study the optimized design for chemical-FETs to provide higher transconductance (and…

应用物理 · 物理学 2019-07-26 Serena Rollo , Dipti Rani , Wouter Olthuis , César Pascual García

We study the intrinsic transport properties of suspended graphene devices at high fields (>1 V/um) and high temperatures (>1000 K). Across 15 samples, we find peak (average) saturation velocity of 3.6x10^7 cm/s (1.7x10^7 cm/s), and peak…

介观与纳米尺度物理 · 物理学 2013-12-02 Vincent E. Dorgan , Ashkan Behnam , Hiram J. Conley , Kirill I. Bolotin , Eric Pop

Graphene and its heterostructures exhibit interesting electronic properties and are explored for quantum spin Hall effect(QSHE) and magnetism based device applications. In present work, we propose a heterostructure of graphene encapsulated…

材料科学 · 物理学 2019-10-07 Mohammed Ghadiyali , Sajeev Chacko

High-frequency terahertz (THz) detectors are vital for next-generation high-speed wireless communication systems. Graphene, with its high carrier mobility, broadband absorption, and weak electron-phonon coupling, offers great promise for…

We have developed an etching process to fabricate a quantum dot and a nearby single electron transistor as a charge detector in a single layer graphene. The high charge sensitivity of the detector is used to probe Coulomb diamonds as well…

介观与纳米尺度物理 · 物理学 2015-05-19 Ling-Jun Wang , Gang Cao , Tao Tu , Hai-Ou Li , Cheng Zhou , Xiao-Jie Hao , Zhan Su , Guang-Can Guo , Guo-Ping Guo , Hong-Wen Jiang

Implementing new materials as alternative to silicon for application in photonic devices has been the center of attention in the scientific community. Two-Dimensional (2D) materials have shown a great capacity to be next alternative to…

Monolayer graphene exhibits exceptional electronic and mechanical properties, making it a very promising material for nanoelectromechanical (NEMS) devices. Here, we conclusively demonstrate the piezoresistive effect in graphene in a…

介观与纳米尺度物理 · 物理学 2013-07-12 A. D. Smith , F. Niklaus , A. Paussa , S. Vaziri , A. C. Fischer , M. Sterner , F. Forsberg , A. Delin , D. Esseni , P. Palestri , M. Östling , M. C. Lemme

Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two…

介观与纳米尺度物理 · 物理学 2011-01-19 Haomin Wang , Yihong Wu , Chunxiao Cong , Jingzhi Shang , Ting Yu
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