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相关论文: Li-intercalated Graphene on SiC(0001): an STM stud…

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On the basis of first-principles calculations, we report that a novel interfacial atomic structure occurs between graphene and the surface of silicon carbide, destroying the Dirac point of graphene and opening a substantial energy gap…

材料科学 · 物理学 2008-04-30 Seungchul Kim , Jisoon Ihm , Hyoung Joon Choi , Young-Woo Son

The results of micro-Raman scattering measurements performed on three different ``graphitic'' materials: micro-structured disks of highly oriented pyrolytic graphite, graphene multi-layers thermally decomposed from carbon terminated surface…

介观与纳米尺度物理 · 物理学 2009-11-13 C. Faugeras , A. Nerriere , M. Potemski , A. Mahmood , E. Dujardin , C. Berger , W. A. de Heer

Existence of van der Waals gaps renders two-dimensional (2D) materials ideal passages of lithium for being used as anode materials. However, the requirement of good conductivity significantly limits the choice of 2D candidates. So far only…

材料科学 · 物理学 2022-06-13 Zheng Shu , Xiangyue Cui , Bowen Wang , Hejin Yan , Yongqing Cai

The lubricating ability of graphite largely depends on the environmental humidity, essentially the amount of water in between its layers. In general, intercalated molecules in layered materials modify their extraordinary properties by…

材料科学 · 物理学 2019-01-09 A. Qadir , Y. W. Sun , W. Liu , P. Goldberg Oppenheimer , Y. Xu , C. J. Humphreys , D. J. Dunstan

Free standing silicene is predicted to display comparable electronic properties as graphene. However, the yet synthesized silicene-like structures have been only realized on different substrates which turned out to exhibit versatile…

材料科学 · 物理学 2015-06-18 G. R. Berdiyorov , M. Neek-Amal , F. M. Peeters , Adri C. T. van Duin

An investigation of the early stage formation of graphene on the C-face of 6H-SiC is presented. We show that the sublimation of few atomic layers of Si out of the SiC substrate is not homogeneous. In good agreement with the results of…

材料科学 · 物理学 2009-11-13 N. Camara , G. Rius , J. -R. Huntzinger , A. Tiberj , L. Magaud , N. Mestres , P. Godignon , J. Camassel

Intercalation of alkali atoms within the lamellar transition metal dichalcogenides is a possible route toward a new generation of batteries. It is also a way to induce structural phase transitions authorizing the realization of optical and…

Here we report the photoemission studies of intercalation process of Fe underneath graphene layer on Ni(111). The process of intercalation was monitored via XPS of corresponding core levels and UPS of the graphene-derived $\pi$ states in…

材料科学 · 物理学 2009-11-13 Yu. S. Dedkov , M. Fonin , U. Rüdiger , C. Laubschat

Recently the graphene/SiC interface has emerged as a versatile platform for the epitaxy of otherwise unstable, monoelemental, two-dimensional (2D) layers via intercalation. Intrinsically capped into a van der Waals heterostructure with…

介观与纳米尺度物理 · 物理学 2022-06-23 Philipp Rosenzweig , Hrag Karakachian , Dmitry Marchenko , Ulrich Starke

In this study the growth process of epitaxial graphene on SiC was investigated systematically. The transition from the initial buffer layer growth to the formation of the first monolayer graphene domains was investigated by various…

Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial chemical vapor deposition SiC reactor. A method for H2…

The Seebeck coefficient in multilayer graphene is investigated within the density-functional theory, using the semiclassical Boltzmann equations and interpolating the bands in a maximally-localized Wannier functions basis set. We compare…

材料科学 · 物理学 2015-01-07 Malgorzata Wierzbowska , Adam Dominiak , Giovanni Pizzi

Because of the dominant role of the surface of molecules and their individuality, molecules behave dis-tinctively in a confined space, which has far-reaching implications in many physical, chemical and bio-logical systems. Here, we…

介观与纳米尺度物理 · 物理学 2014-04-29 DaeEung Lee , Gwanghyun Ahn , Sunmin Ryu

Single-crystalline transition metal films are ideal playing fields for the epitaxial growth of graphene and graphene-base materials. Graphene-silicon layered structures were successfully constructed on Ir(111) thin film on Si substrate with…

In their comment Calandra \textit{et al} \cite{Calandra}, assert two points: (1) the estimate of charge transfer from Li to graphene layers in LiC$_6$ in our letter \cite{Pan2011c} is incorrect because of the three dimensional (3D)…

超导电性 · 物理学 2012-04-10 Z. -H. Pan , A. V. Fedorov , C. A. Howard , M. Ellerby , T. Valla

Metal intercalation in epitaxial graphene enables the emergence of proximity-induced superconductivity and modified quantum transport properties. However, systematic transport studies of intercalated graphene have been hindered by…

The buffer layer has been analysed by combined micro-Raman and micro-transmission experiments. The epitaxial graphene growth on the (0001) Si face of 6H-SiC substrates was tuned to get a mixed surface at the early stage of graphitization…

介观与纳米尺度物理 · 物理学 2012-12-07 A. Tiberj , J. R. Huntzinger , N. Camara , P. Godignon , J. Camassel

We investigate the morphology of quasi-free-standing monolayer graphene (QFMLG) formed at several temperatures by hydrogen intercalation and discuss its relationship with transport properties. Features corresponding to incomplete hydrogen…

介观与纳米尺度物理 · 物理学 2015-02-03 Yuya Murata , Torge Mashoff , Makoto Takamura , Shinichi Tanabe , Hiroki Hibino , Fabio Beltram , Stefan Heun

Graphene monolayer grown by Si evaporation from the 0001 surface of SiC displays a moir\'e pattern of corrugation whose structure is ambiguous: different measurements and theoretical studies show either protruding bumps surrounded by…

介观与纳米尺度物理 · 物理学 2018-04-27 Tommaso Cavallucci , Valentina Tozzini

We investigate the effect of SiC stacking on the 4H-SiC/SiO$_2$ interface, both in the presence and absence of O defects, which appear during thermal oxidation, via first principles calculations. It is known that 4H-SiC(0001) has two…

材料科学 · 物理学 2015-08-10 Christopher James Kirkham , Tomoya Ono