相关论文: Whisker growth on Sn thin film accelerated under g…

We observed the accelerated tin whisker development under non-destructive gamma-ray and x-ray irradiation and determined the characteristic range of radiation doses 20-30 KGy, for which that effect becomes significant. We were able to…

We have investigated the influence of electric field on tin whisker growth. Sputtered tin samples were exposed to electron radiation, and were subsequently found to have grown whiskers, while sister control samples did not exhibit whisker…

The potential of NiO sublayers for whisker growth mitigation has been examined. A thin NiO film was applied on a Cu-coated substrate before the deposition of a thicker Sn layer. The growth of Sn whiskers was then followed by optical and…

Here, we study the role of stress state and stress gradient in whisker growth in Sn coatings electrodeposited on brass. The bulk stress in Sn coatings was measured using a laser-optics based curvature setup, whereas glancing angle X-ray…

An impact of thin metallic ZrN layers on Si and sapphire wafers on substrate temperature during MBE growth of GaN nanowires is studied. Using nucleation kinetics of GaN as a sensitive probe we show that a thin ZrN layer strongly increases…

Thin films of TiN were sputter-deposited onto Si and sapphire wafers with and without SiN buffer layers. The films were fabricated into RF coplanar waveguide resonators, and internal quality factor measurements were taken at millikelvin…

Reactive dual ion beam sputter deposition of AlN thin films was carried out for the analysis of surface growth characteristics by Atomic Force Microscopy. The variation of roughness as a function of deposition time was analysed by Dynamic…

MgGeN2 films were synthesized using metal-organic chemical vapor deposition on GaN/c-sapphire templates and c-plane sapphire substrates. Energy-dispersive X-ray spectroscopy was used to estimate the cation composition ratios. To mitigate…

We present a systematic study of the properties of TiN films by varying the deposition conditions in an ultra-high-vacuum reactive magnetron sputtering chamber. By increasing the deposition pressure from 2 to 9 mTorr while keeping a nearly…

We have investigated properties of superconducting titanium nitride (TiN) films that were sputtered over a large range of RF-induced DC bias voltage applied to the substrate. Films grown with the largest bias voltages contained cubic TiN…

The use of highly efficient and solarblind GaN photocathodes as part of multichannel plate UV detectors for applications in astronomy would strongly benefit from the direct growth of GaN on typical window materials with high transmission…

Cracking of thick GaN films on sapphire substrates during the cooling down after the growth was studied. The cracking was suppressed by increasing the film-to-substrate thickness ratio and by using an intermediate carbon buffer layer, that…

Tin Selenide (SnSe) thin films were grown onto glass and alumina substrates by Chemical Vapor Deposition (CVD) method. The structural, micro-structural and morphological characterizations of the as grown thin films were investigated using…

Here we report the evolution of Ni stress in electroplated Ni films and investigate its origins as a function of electroplating time. First, low stress 200-nm-thick Ti / 200-nm thick Ni seed layers are deposited onto Si (100) wafers via…

In this work, a very high, locally applied electric field was used to induce whisker nucleation on an Sn film. The field was generated by using a conductive AFM tip and applying a voltage bias between the sample and the conductive…

Orthorhombic II-IV nitride semiconductors offer an expanded and more tunable material set with unique properties, while maintaining close compatibility with the wurtzite crystal structure of the III-nitrides. In particular, MgSiN2, a II-IV…

Si-doped GaN films were grown on $\textit{c}$-sapphire by rf magnetron reactive co-sputtering of GaAs and Si at various partial pressures of N$_2$ in Ar-N2 growth atmosphere and their epitaxial character was ascertained by phi-scans. Energy…

Tin selenide (SnSe) is a van der Waals (vdW) layered post-transition metal monochalcogenide compound which is promising for a wide range of device applications when its thickness is reduced to a few layers. Hence, developing a mature…

We present the experimental study of ultrafast optical excitation of magnetostatic surface spin wave (MSSW) packets and their spectral properties in thin films of pure iron. As the packets leave the excitation area and propagate in space,…

Dynamics of bending of NaCl whisker is studied with use of high speed camera VFU-1 synchronized with high power electron accelerator GIN-600. The dynamics of bending turns to be non-monotonous and quite complicated. The figures of etching…