相关论文: InGaN Metal-IN Solar Cell: optimized efficiency an…

White light emitting diodes based on III-nitride InGaN/GaN quantum wells currently offer the highest overall efficiency for solid state lighting applications. Although current phosphor-converted white LEDs have high electricity-to-light…

Sulfide chalcopyrite, Cu(In,Ga)S2, having wide bandgap (larger than 1.5 eV), favorable optoelectronic properties, and high stability, is a promising top-cell absorber for tandem applications. Adapting device structures optimized for 1.0 -…

We investigate the performance of thermoradiative (TR) cells using the III-V group of semiconductors, which include GaAs, GaSb, InAs, and InP, with the aim of determining their efficiency and finding the best TR cell materials among the…

We investigate the electronic structure and defect properties of Sn- and Ge- doped ZnTe by first-principles calculations within the DFT+$GW$ formalism. We find that $(\text{Sn}_\text{Zn})$ and $(\text{Ge}_\text{Zn})$ introduce isolated…

The photovoltaic cell based on p-GaN film/n-ZnO micro rods quasi array heterojunction was fabricated. According to the scanning electron microscopy data, the ZnO array consisted of the tightly packed vertical micro rods with a diameter of…

Silicon photonics has thrived in telecommunications over recent decades, and its extension to the mid-infrared range has the potential to unlock valuable opportunities for sensing, imaging, and free-space communications. With this…

Reducing the thickness of Cu(In,Ga)Se2 solar cells is a key objective in order to reduce production cost and to improve sustainability. The major challenge for sub-micron Cu(In,Ga)Se2 cells is the recombination at the backside. In standard…

Zinc Phosphide ($Zn_3P_2$) could be the basis for cheap and highly efficient solar cells. Its use in this regard is limited by the difficulty in n-type doping the material. In an effort to understand the mechanism behind this, the…

Selenium has resurged as a promising photovoltaic material in solar cell research due to its wide direct bandgap of 1.95 eV, making it a suitable candidate for a top cell in tandem photovoltaic devices. However, the optoelectronic quality…

Advances in opto-electronics are often led by discovery and development of materials featuring unique properties. Recently the material class of transparent conductive oxides (TCO) has attracted attention for active photonic devices…

Tandem solar cells are at the forefront of extending the efficiency limits of solar cell technology. Among two-terminal tandems, current-matched (CM) tandem solar cells are of particular interest, owing to their relative ease of…

We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sputtering. The poor junction band alignment and the presence of…

A design tool was formulated for optimizing the efficiency of inorganic, thin-film, photovoltaic solar cells. The solar cell can have multiple semiconductor layers in addition to antireflection coatings, passivation layers, and buffer…

Sub-micrometer thin films are promising platforms for emerging flexible photovoltaic devices. Although the current market already produces efficient solar cells, the average wafer thickness of these devices remains far from the…

Thin-film solar cells that are considered as the second generation of solar cells are known for their low cost and acceptable efficiency. In this technology, semiconductor layers with a thickness of micrometer are deposited on thick enough…

It is currently possible to fabricate crystalline silicon solar cells with the absorber thickness ranging from a few hundreds of micrometers (conventional wafer-based cells) to devices as thin as $1\,\mu\mathrm{m}$. In this work, we use a…

The hybrid metal-dielectric nanostructures (HMDN) are promising candidates to address the ohmic loss by conventional nanostructures in photovoltaic applications by strong confinement and high scattering directivity. In this study, we…

ZnSnN2 is an Earth-abundant analog to the III-Nitrides with potential as a solar absorber due to its direct bandgap, steep absorption onset, and disorder-driven bandgap tunability. Despite these desirable properties, discrepancies in the…

Solar cells with the structure ITO-PEDOT:PSS-Ag:SnS-Al were fabricated with the active layer of tin sulphide with silver nano-particles (Ag:SnS) grown by thermal co-evaporation. To understand the influence of the silver nanoparticles on the…

Following letter introduces a theoretical approach to investigate the effect of two-step GaN barrier layer growth methodology on the performance of InGaN/GaN MQW solar cell, in which a lower temperature GaN cap layer was grown on top of…