相关论文: Titanium dioxide hole-blocking layer in ultra-thin…
This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical and structural properties of annealed Ni and Ti/Al/Ni…
Transition metal oxides (TMOs) like MoOx are increasingly explored as hole transport layers for perovskite-based solar cells. Due to their large work function, the hole collection mechanism of such solar cells are fundamentally different…
The hybrid metal-dielectric nanostructures (HMDN) are promising candidates to address the ohmic loss by conventional nanostructures in photovoltaic applications by strong confinement and high scattering directivity. In this study, we…
A solar cell design using the combination of titanium dioxide and graphite as active photon absorbing materials were proposed. The titanium dioxide absorbs photons of nearly ultraviolet wavelengths to produce electron hole pairs, while…
Passivated, hole-selective contacts play important role in reducing surface recombination by lowering the concentration of electrons in the rear side of a solar cell. However, parasitic optical losses in these contacts can still limit the…
We demonstrate a novel type of solar cell, one that uses fixed negative charges, formed at the interface of n-Si with Al2O3, to generate strong inversion at the Si surface by electrostatic repulsion. Built-in voltages of up to 755 mV are…
Multijunction solar cells in a tandem configuration could further lower the costs of electricity if crystalline Si (c-Si) is used as bottom cell. However, for direct monolithic integration on c-Si, only a restricted number of top and bottom…
Titanium silicide is a key contact material in advanced three-dimensional semiconductor device architectures. Here, we examine the formation of ultrathin Ti-silicide on Si(100) using a combination of non-destructive in-situ and ex-situ ion…
Following the recent success of monolithically integrated Perovskite/Si tandem solar cells, great interest has been raised in searching for alternative wide bandgap top-cell materials with prospects of a fully earth-abundant, stable and…
Beta gallium oxide ($\beta$-Ga$_2$O$_3$) shows significant promise in the high-temperature, high-power, and sensing electronics applications. However, long-term stable metallization layers for Ohmic contacts at high temperature present…
It is known that silicon is an indirect band gap material, reducing its efficiency in photovoltaic applications. Using surface plasmons in metallic nanoparticles embedded in a solar cell has recently been proposed as a way to increase the…
We propose an efficient plasmonic structure consisting of metal strips and thin-film silicon for solar energy absorption. We numerically demonstrate the absorption enhancement in symmetrical structure based on the mode coupling between the…
Reducing the thickness of Cu(In,Ga)Se2 solar cells is a key objective in order to reduce production cost and to improve sustainability. The major challenge for sub-micron Cu(In,Ga)Se2 cells is the recombination at the backside. In standard…
In recent years, considerable efforts have been devoted to developing novel electron-selective materials for crystalline Si (c-Si) solar cells with the attempts to simplify the fabrication process and improve efficiency. In this study,…
The design and fabrication of a metal-dielectric-metal absorber that achieves strong absorption from the ultraviolet (UV) to the near-infrared (near-IR) spectrum are presented. The proposed nanostructure consists of a periodic titanium (Ti)…
The deposition of a thin oxide layer at metal/semiconductor interfaces has been previously reported as a means of reducing contact resistance in 2D electronics. Using X-ray photoelectron spectroscopy with in-situ Ti deposition, we fabricate…
There is evidence that interface recombination in Cu2ZnSnS4 solar cells contributes to the open-circuit voltage deficit. Our hybrid density functional theory calculations suggest that electron-hole recombination at the Cu2ZnSnS4/CdS…
Radiative and non-radiative charge carrier recombination in thin-film diodes plays a key role in determining the efficiency of electronic devices made of next generation semiconductors such as organic, perovskite and nanocrystals. In this…
Understanding metal-semiconductor interfaces is critical to the advancement of photocatalysis and sub-bandgap solar energy harvesting where sub-bandgap photons can be excited and extracted into the semiconductor. In this work, we compare…
The monolithic tandem integration of third-generation solar energy materials on silicon holds great promise for photoelectrochemistry and photovoltaics. However, this can be challenging when it involves high-temperature reactive processes,…