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相关论文: Energy Dissipation in Monolayer MoS$_2$ Electronic…

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Two-dimensional (2D) Transition Metal Dichalcogenide semiconductor (TMDs) nanocircuits are deterministically engineered over large-scale substrates. The original approach combines large-area physical growth of 2D TMDs layer with high…

介观与纳米尺度物理 · 物理学 2022-09-23 Maria Caterina Giordano , Giorgio Zambito , Matteo Gardella , Francesco Buatier de Mongeot

Dislocations in crystalline materials are widely exploited to tailor the thermal conductivity of semiconductors and thermoelectrics, yet a critical gap persists: direct measurement of local thermal resistance at individual buried…

The nature of the interface in lateral heterostructures of 2D monolayer semiconductors including its composition, size, and heterogeneity critically impacts the functionalities it engenders on the 2D system for next-generation…

When transistor gate insulators have nanometer-scale equivalent oxide thickness (EOT), the gate capacitance ($C_\textrm{G}$) becomes smaller than the oxide capacitance ($C_\textrm{ox}$) due to the quantum capacitance and charge centroid…

介观与纳米尺度物理 · 物理学 2023-02-15 Robert K. A. Bennett , Eric Pop

Transition-metal dichalcogenides (TMDCs) are important class of two-dimensional (2D) layered materials for electronic and optoelectronic applications, due to their ultimate body thickness, sizable and tunable bandgap, and decent theoretical…

材料科学 · 物理学 2017-01-10 Zhihao Yu , Zhun-Yong Ong , Songlin Li , Jian-Bin Xu , Gang Zhang , Yong-Wei Zhang , Yi Shi , Xinran Wang

Understanding energy dissipation and transport in nanoscale structures is of great importance for the design of energy-efficient circuits and energy-conversion systems. This is also a rich domain for fundamental discoveries at the…

介观与纳米尺度物理 · 物理学 2010-03-23 Eric Pop

Monolayers (ML) of Group-6 transition-metal dichalcogenides (TMDs) are semiconducting two-dimensional materials with direct bandgap, showing promising applications in various fields of science and technology, such as nanoelectronics and…

We report Raman spectra measurements on a MoS2 monolayer supported on SiO2 as a function of temperature. Unlike in previous studies, the positions of the two main Raman modes, E2g1 and A1g exhibited nonlinear temperature dependence.…

介观与纳米尺度物理 · 物理学 2014-06-13 Andrzej Taube , Jarosław Judek , Cezariusz Jastrzębski , Anna Duzynska , Krzysztof Świtkowski , Mariusz Zdrojek

We study the photoresponse of single-layer MoS2 field-effect transistors by scanning photocurrent microscopy. We find that, unlike in many other semiconductors, the photocurrent generation in single-layer MoS2 is dominated by the…

介观与纳米尺度物理 · 物理学 2013-02-07 Michele Buscema , Maria Barkelid , Val Zwiller , Herre S. J. van der Zant , Gary A. Steele , Andres Castellanos-Gomez

Using nonequilibrium Monte Carlo simulations of the phonon Boltzmann transport equation, we study transient heat transfer in five indium-based two-dimensional monolayers: Janus monolayers In$_2$SeTe and In$_2$SSe, pristine InSe, and InSe…

应用物理 · 物理学 2025-06-11 Seyedeh Ameneh Bahadori , Zahra Shomali , Reza Asgari

Dissipationless charge transport is one of the defining properties of superconductors (SC). The interplay between dimensionality and disorder in determining the onset of dissipation in SCs remains an open theoretical and experimental…

介观与纳米尺度物理 · 物理学 2020-04-27 A. Benyamini , E. J. Telford , D. M. Kennes , D. Wang , A. Williams , K. Watanabe , T. Taniguchi , J. Hone , C. R. Dean , A. J. Millis , A. N. Pasupathy

The present work refers to a simulation study on nanoconfined polymers in polymer-MoS 2 nanocomposites as a function of MoS 2 -MoS 2 interlayer separation. We indeed apply reverse nonequlibrium molecular dynamics simulations (RNEMD) to…

软凝聚态物质 · 物理学 2021-08-10 Mohammad Reza Gharib-Zahedi , Amin Koochaki , Mohammad Alaghemandi

We report, for CVD-grown monolayer MoS2, the very first results on temporal degradation of material and device performance under electrical stress. Both low and high field regimes of operation are explored at different temperatures, gate…

应用物理 · 物理学 2020-07-01 Ansh , Jeevesh Kumar , Gaurav Sheoran , Mayank Shrivastava

Through advanced quantum mechanical simulations combining electron and phonon transport from first-principles self-heating effects are investigated in n-type transistors with a single-layer MoS2, WS2, and black phosphorus as channel…

介观与纳米尺度物理 · 物理学 2018-12-06 Christian Stieger , Aron Szabo , Teute Bunjaku , Mathieu Luisier

Thermal properties have an outsized impact on efficiency and sensitivity of devices with nanoscale structures, such as in integrated electronic circuits. A number of thermal conductivity measurements for semiconductor nanostructures exist,…

Atomically thin two-dimensional (2D) semiconductors such as molybdenum disulphide (MoS2) hold great promise in electrical, optical, and mechanical devices and display novel physical phenomena such as coupled spin-valley physics and the…

Future electronics require aggressive scaling of channel material thickness while maintaining device performance. Two-dimensional (2D) semiconductors are promising candidates, but despite over two decades of research, experimental…

The effect of electron irradiation on 2D materials is an important topic, both for the correct interpretation of electron microscopy experiments and for possible applications in electron lithography. After the importance of including…

材料科学 · 物理学 2025-01-16 Carsten Speckmann , Kimmo Mustonen , Diana Propst , Clemens Mangler , Jani Kotakoski

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present…

The operation of resistive and phase-change memory (RRAM and PCM) is controlled by highly localized self-heating effects, yet detailed studies of their temperature are rare due to challenges of nanoscale thermometry. Here we show that the…