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Owing to the small energy differences between its polymorphs, MoTe2 can access a full spectrum of electronic states, from the 2H semiconducting state to the 1T semimetallic state, and from the Td Weyl semimetallic state to the…

We report growth characteristics of epitaxial $\beta$-Na$_{0.6}$CoO$_{2}$ and $\gamma$-Na$_{0.7}$CoO$_{2}$ thin films on (001) sapphire substrates grown by pulsed-laser deposition. Reduction of deposition rate could change structure of…

材料科学 · 物理学 2009-11-11 J. Y. Son , Bog G. Kim , J. H. Cho

2H MoS2 has been intensively studied because of layer-dependent electronic structures and novel physical properties. Though the metastable 1T MoS2 with the [MoS6] octahedron was observed from the microscopic area, the true crystal structure…

Transition metal dichalcogenides (TMDs) have recently attracted attention due to their interesting electronic and optical properties. Fabrication of these materials in a reliable and facile method is important for future applications, as…

We report for the first time the direct growth of Molybdenum disulfide (MoS$_2$) monolayers on nanostructured silicon-on-insulator waveguides. Our results indicate the possibility of utilizing the Chemical Vapour Deposition (CVD) on…

Single crystals of MgB2 with a size up to 1.5x0.9x0.2 mm3 have been grown with a high pressure cubic anvil technique. The crystal growth process is very peculiar and involves an intermediate nitride, namely MgNB9. Single crystals of BN and…

We directly monitor exciton propagation in freestanding and SiO2-supported WS2 monolayers through spatially- and time-resolved micro-photoluminescence under ambient conditions. We find highly nonlinear behavior with characteristic,…

Reflectance and magneto-reflectance experiments together with theoretical modelling based on the $\mathbf{k\cdot p}$ approach have been employed to study the evolution of direct bandgap excitons in MoS$_2$ layers with a thickness ranging…

介观与纳米尺度物理 · 物理学 2019-03-01 A. O. Slobodeniuk , Ł. Bala , M. Koperski , M. R. Molas , P. Kossacki , K. Nogajewski , M. Bartos , K. Watanabe , T. Taniguchi , C. Faugeras , M. Potemski

Strain induced through fabrication, both by patterning and capping, can be used to change the properties of two-dimensional (2D) materials or other thin films. Here, we explore how capping layers impart strain to monolayer MoS$_{2}$ using…

We study photoluminescence (PL) spectra and exciton dynamics of MoS$_2$ monolayer (ML) grown by the chemical vapor deposition technique. In addition to the usual direct A-exciton line we observe a low-energy line of bound excitons…

介观与纳米尺度物理 · 物理学 2021-09-14 M. A. Akmaev , M. M. Glazov , M. V. Kochiev , P. V. Vinokurov , S. A. Smagulova , V. V. Belykh

Since de discovery of graphene, the family of 2-dimensional materials has attracted much recent attention. In this work, the nonlinear optical properties of few-layer MoS2 two-dimensional crystals are studied using femtosecond laser pulses.…

介观与纳米尺度物理 · 物理学 2013-06-20 Leandro M. Malard , Thonimar V. Alencar , Ana Paula M. Barboza , Kin Fai Mak , Ana M. de Paula

Synthesis of monolayer MoS2 is essential for fulfilling the potential of MoS2 in catalysis, optoelectronics and valleytronics, etc. Herein, we report for the first time the scalable growth of high quality, domain size tunable (edge length…

Single-layer MoS2 is a direct-gap semiconductor whose electronic band structure strongly depends on the strain applied to its crystal lattice. While uniaxial strain can be easily applied in a controlled way, e.g., by bending of a flexible…

介观与纳米尺度物理 · 物理学 2015-10-01 G. Plechinger , A. Castellanos-Gomez , M. Buscema , H. S. J. van der Zant , G. A. Steele , A. Kuc , T. Heine , C. Schüller , T. Korn

We calculate the excitation spectrum of single-layer MoS$_2$ at several hydrogen coverages by using a method based on first-principles Density-Matrix Time-Dependent Density-Functional Theory (TDDFT). Our results show that the fully…

材料科学 · 物理学 2020-12-30 Naseem Ud Din , Volodymyr Turkowski , Talat S. Rahman

Here, we report the full-fledged journey towards the material synthesis and characterization of few-layered/thin WSe$_2$ using sputtered W-films on SiO$_2$/Si substrates followed by electrical studies under dark and illumination conditions.…

The optical emission efficiency of two dimensional layered transition metal dichalcogenides (TMDs) is one of the most important parameter that affects their optoelectronic performance. Optimization of growth parameters of chemical vapor…

材料科学 · 物理学 2017-06-13 Amina Zafar , Haiyan Nan , Zainab Zafar , Zhangting Wu , Jie Jiang , Yumeng You , Zhenhua Ni

Two-dimensional (2D) materials have received extensive research attentions over the past two decades due to their intriguing physical properties (such as the ultrahigh mobility and strong light-matter interaction at atomic thickness) and a…

We present a photoluminescence study of freestanding and Si/SiO2 supported single- and few-layer MoS2. The single-layer exciton peak (A) is only observed in freestanding MoS2. The photoluminescence of supported single-layer MoS2 is instead…

Here we report the growth of sub-millimeter MgB2 single crystals of various shapes under high pressure in Mg-B-N system. Structure refinement using a single-crystal X-ray diffraction analysis gives lattice parameters a=3.0851(5) A and…

超导电性 · 物理学 2009-11-07 S. Lee , H. Mori , T. Masui , Yu. Eltsev , A. Yamamoto , S. Tajima

Industrial upscaling frequently results in a different coating microstructure than the laboratory prototypes presented in the literature. Here, we investigate the wear behavior of physical vapor deposited (PVD) MoS2 coatings: A dense,…