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相关论文: P-N junctions dynamics in graphene channel induced…

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We show that an electrostatically created n-p junction separating the electron and hole gas regions in a graphene monolayer transmits only those quasiparticles that approach it almost perpendicularly to the n-p interface. Such a selective…

介观与纳米尺度物理 · 物理学 2007-05-23 Vadim V. Cheianov , Vladimir I. Fal'ko

Electrons in graphene follow unconventional trajectories at PN junctions, driven by their pseudospintronic degree of freedom. Significant is the prominent angular dependence of transmission, capturing the chiral nature of the electrons and…

介观与纳米尺度物理 · 物理学 2013-05-30 Redwan N. Sajjad , S. Sutar , J. U. Lee , Avik W. Ghosh

Conductance of zigzag interfaces between graphene sheet and normal metal is investigated in the tight-binding approximation. Boundary conditions, valid for a variety of scattering problems, are constructed and applied to the normal metal --…

介观与纳米尺度物理 · 物理学 2009-11-11 Ya. M. Blanter , Ivar Martin

The electronic transport of graphene p-n junctions under perpendicular magnetic field is investigated in theory. Under low magnetic field, the transport is determined by the resonant tunneling of Landau levels and conductance versus…

介观与纳米尺度物理 · 物理学 2018-05-11 Shu-Guang Cheng

Transport through potential barriers in graphene is investigated using a set of metallic gates capacitively coupled to graphene to modulate the potential landscape. When a gate-induced potential step is steep enough, disorder becomes less…

介观与纳米尺度物理 · 物理学 2009-01-18 N. Stander , B. Huard , D. Goldhaber-Gordon

We calculated a spin-polarized conductance in the almost unexplored nanostructure "high temperature ferromagnetic insulator/ graphene/ ferroelectric film" with a special attention to the impact of electric polarization rotation in a…

材料科学 · 物理学 2020-09-02 Eugene A. Eliseev , Anna N. Morozovska , Maksym V. Strikha

The conductance of ballistic graphene at the neutrality point is due to coherent electron tunneling between the leads, the so called pseudodiffusive regime. The conductance scales as function of the sample dimensions in the same way as in a…

介观与纳米尺度物理 · 物理学 2014-09-17 F. Guinea , M. I. Katsnelson

The problem of electrostatic screening of a charged line by undoped or weakly doped graphene is treated beyond the linear-response theory. The induced electron density is found to be approximately doping independent, n(x)~(log x)^2/x^2, at…

介观与纳米尺度物理 · 物理学 2015-06-24 Bor-Yuan Jiang , Michael M. Fogler

We study the magnetization dynamics in a ferromagnet-insulator-superconductor tunnel junction and the associated buildup of the electrical polarization. We show that for an open circuit, the induced voltage varies strongly and…

介观与纳米尺度物理 · 物理学 2013-09-02 Mircea Trif , Yaroslav Tserkovnyak

High quality epitaxial graphene films can be applied as templates for tailoring graphene-substrate interfaces that allow for precise control of the charge carrier behavior in graphene through doping and many-body effects. By combining…

In this work we present a theoretical study of transport properties of a double crossbar junction composed by segments of graphene ribbons with different widths forming a graphene quantum dot structure. The systems are described by a…

介观与纳米尺度物理 · 物理学 2011-04-29 Jhon W. Gonzalez , Monica Pacheco , Luis Rosales , Pedro Orellana

We investigate charge transport in pentacene-graphene nanojunctions employing density functional theory (DFT) electronic structure calculations and the Landauer transport formalism. The results show that the unique electronic properties of…

介观与纳米尺度物理 · 物理学 2013-02-26 Ivan A. Pshenichnyuk , Pedro B. Coto , Susanne Leitherer , Michael Thoss

We developed a multi-level lithography process to fabricate graphene p-n-p junctions with the novel geometry of contactless, suspended top gates. This fabrication procedure minimizes damage or doping to the single atomic layer, which is…

介观与纳米尺度物理 · 物理学 2009-12-18 Gang Liu , Jairo Valesco , Wenzhong Bao , Chun Ning Lau

Negative differential conductance (NDC), characterized by the decreasing current with increasing voltage, has attracted continuous attention for its various novel applications. The NDC typically exists in a certain range of bias voltages…

介观与纳米尺度物理 · 物理学 2018-04-04 Si-Yu Li , Haiwen Liu , Jia-Bin Qiao , Hua Jiang , Lin He

Graphene p-n junctions offer a potentially powerful approach towards controlling electron trajectories via collimation and focusing in ballistic solid-state devices. The ability of p-n junctions to control electron trajectories depends…

We show simultaneous p and n type carrier injection in bilayer graphene channel by varying the longitudinal bias across the channel and the top gate voltage. The top gate is applied electrochemically using solid polymer electrolyte and the…

介观与纳米尺度物理 · 物理学 2009-09-08 Biswanath Chakraborty , Anindya Das , A. K. Sood

Graphene holds great potential for superconductivity due to its pure two-dimensional nature, the ability to tune its carrier density through electrostatic gating, and its unique, relativistic-like electronic properties. At present, we are…

It has been shown in a recent study [Nguyen et al., Nanotechnol. \textbf{25}, 165201 (2014)] that unstrained/strained graphene junctions are promising candidates to improve the performance of graphene transistors that is usually hindered by…

介观与纳米尺度物理 · 物理学 2014-10-07 Mai Chung Nguyen , Viet Hung Nguyen , Huy-Viet Nguyen , Philippe Dollfus

The remarkable electrical, optical and mechanical properties of graphene make it a desirable material for electronics, optoelectronics and quantum applications. A fundamental understanding of the electrical conductivity of graphene across a…

We provide a semiclassical description of the electronic transport through graphene n-p junctions in the quantum Hall regime. A semiclassical approximation for the conductance is derived in terms of the various snake-like trajectories at…

介观与纳米尺度物理 · 物理学 2010-06-21 Pierre Carmier , Caio Lewenkopf , Denis Ullmo