中文
相关论文

相关论文: Charge-spin mutual entanglement: A case study by e…

200 篇论文

In contrast to the conventional von Neumann bipartite entanglement entropy (bEE), we show that a more appropriate description of the one-dimensional doped Mott insulator is a new kind of mutual entanglement entropy (mEE) between the charge…

强关联电子 · 物理学 2020-04-28 Wayne Zheng , Zheng-Yu Weng

A central issue of Mott physics, with symmetries being fully retained in the spin background, concerns the charge excitation. In a two-leg spin ladder with spin gap, an injected hole can exhibit either a Bloch wave or a density wave by…

强关联电子 · 物理学 2018-07-25 Zheng Zhu , D. N. Sheng , Zheng-Yu Weng

We investigate the interaction-driven reorganization of spin and charge correlations in finite Hubbard clusters using exact diagonalization. Focusing on half-filled and lightly doped square lattices, we analyze spin-resolved charge-gaps,…

强关联电子 · 物理学 2026-02-25 Md Fahad Equbal , M. A. H. Ahsan

For the $t$-$J$ model, variational wave functions can generally be constructed based on an accurate description of antiferromagnetism (AFM) at half-filling and an exact phase-string sign structure under doping. The single-hole-doped and…

强关联电子 · 物理学 2026-02-25 Can Cui , Jing-Yu Zhao , Zheng-Yu Weng

We consider a new quantum gate mechanism based on electron spins in coupled semiconductor quantum dots. Such gates provide a general source of spin entanglement and can be used for quantum computers. We determine the exchange coupling J in…

介观与纳米尺度物理 · 物理学 2009-10-31 Guido Burkard , Daniel Loss , David P. DiVincenzo

We investigate the nature of doped Mott insulators using exact diagonalization and density matrix renormalization group methods. Persistent spin currents are revealed in the ground state, which are concomitant with a nonzero total momentum…

强关联电子 · 物理学 2018-10-22 Wayne Zheng , Zheng Zhu , D. N. Sheng , Zheng-Yu Weng

Injecting a single hole into a one-dimensional Heisenberg spin chain is probably the simplest case of doping a Mott insulator. The motion of such a single hole will generally induce a many-body phase shift, which can be identified by an…

强关联电子 · 物理学 2016-01-06 Zheng Zhu , Qing-Rui Wang , D. N. Sheng , Zheng-Yu Weng

The fate of an injected hole in a Mott antiferromagnet is an outstanding issue of strongly correlated physics. It provides important insights into doped Mott insulators closely related to high-temperature superconductivity in cuprates.…

强关联电子 · 物理学 2013-11-22 Zheng Zhu , Hong-Chen Jiang , Yang Qi , Chu-Shun Tian , Zheng-Yu Weng

Strongly correlated materials often undergo a Mott metal-insulator transition, which is tipically first-order, as a function of control parameters like pressure. Upon doping, rich phase diagrams with competing instabilities are found. Yet,…

Understanding the doped Mott insulator is a central challenge in condensed matter physics. In this work, we first explicitly identify a new sign structure in the $t$-$t'$-$J$ model on the square lattice that replaces the conventional Fermi…

强关联电子 · 物理学 2024-10-15 Xin Lu , Jia-Xin Zhang , Shou-Shu Gong , D. N. Sheng , Zheng-Yu Weng

Cooper pairing instability in a Fermi liquid is well understood by the BCS theory, but pairing mechanism for doped Mott insulators still remains elusive. Previously it has been shown by density matrix renormalization group (DMRG) method…

强关联电子 · 物理学 2014-08-28 Zheng Zhu , Hong-Chen Jiang , Dong-Ning Sheng , Zheng-Yu Weng

We study a ground-state ansatz for the single-hole doped $t$-$J$ model in two dimensions via a variational Monte Carlo (VMC) method. Such a single-hole wave function possesses finite angular momenta generated by hidden spin currents, which…

强关联电子 · 物理学 2019-07-04 Shuai Chen , Qing-Rui Wang , Yang Qi , D. N. Sheng , Zheng-Yu Weng

A single-hole ground state Ansatz for the two-dimensional t-J model has been recently studied by the variational Monte Carlo (VMC) method. Such a doped hole behaves like a "twisted" non-Landau quasiparticle characterized by an emergent…

强关联电子 · 物理学 2022-04-01 Jing-Yu Zhao , Shuai A. Chen , Hao-Kai Zhang , Zheng-Yu Weng

We study the phase diagram of a one-dimensional extended Hubbard model with antiferromagnetic exchange interaction analytically and numerically. The bosonization and transfer-matrix renormalization group methods are used in the…

强关联电子 · 物理学 2009-11-10 Jianhui Dai , Xiaoyong Feng , Tao Xiang , Yue Yu

In this paper, we study the entanglement properties of a spin-1 model the exact ground state of which is given by a Matrix Product state. The model exhibits a critical point transition at a parameter value a=0. The longitudinal and…

强关联电子 · 物理学 2015-06-25 Amit Tribedi , Indrani Bose

The spin and charge excitations of the t--J ladder are studied by exact diagonalization techniques for several electron densities. The various modes are classified according to their spin (singlet or triplet excitations) and their parity…

凝聚态物理 · 物理学 2016-08-31 D. Poilblanc , D. J. Scalapino , W. Hanke

We studied the real space structure of states in twisted bilayer graphene at the `magic angle' $\theta = 1.08^\circ$. The flat bands close to charge neutrality are composed of a mix of `ring' and `center' orbitals around the AA stacking…

强关联电子 · 物理学 2019-01-02 Louk Rademaker , Paula Mellado

We study the effects of doping a Mott insulator on the honeycomb lattice where spins interact via direction dependent Kitaev couplings J_K, and weak antiferromagnetic Heisenberg couplings J. This model is known to have a spin liquid ground…

强关联电子 · 物理学 2012-08-30 Yi-Zhuang You , Itamar Kimchi , Ashvin Vishwanath

How the ground state nature can be dramatically changed by the distinct underlying spin correlation is a central issue of doped Mott insulators. The two-leg XXZ ladder provides a prototypical spin background, which can be tuned from a…

强关联电子 · 物理学 2020-07-14 Rong-Yang Sun , Zheng Zhu , Zheng-Yu Weng

It is generally accepted that doped Mott insulators can be well characterized by the t-J model. In the t-J model, the electron fractionalization is dictated by the phase string effect. We found that in the underdoped regime, the…

强关联电子 · 物理学 2012-01-18 Peng Ye , Chu-Shun Tian , Xiao-Liang Qi , Zheng-Yu Weng
‹ 上一页 1 2 3 10 下一页 ›