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相关论文: Stacking-dependent electronic structure of trilaye…

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In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric field dependent electronic properties. However, a direct and well-resolved experimental visualization of its band structure has not yet been…

The crystallographic stacking order in multilayer graphene plays an important role in determining its electronic properties. It has been predicted that a rhombohedral (ABC) stacking displays a conducting surface state with flat electronic…

Stacking order plays a crucial role in determining the crystal symmetry and has significant impacts on electronic, optical, magnetic, and topological properties. Electron-phonon coupling, which is central to a wide range of intriguing…

The stacking order degree of freedom in trilayer graphene plays a critical role in determining the existence of an electric field tunable band gap. We present spatially-resolved tunneling spectroscopy measurements of dual gated Bernal (ABA)…

介观与纳米尺度物理 · 物理学 2014-07-31 Matthew Yankowitz , Fenglin Wang , Chun Ning Lau , Brian J. LeRoy

The electronic structure of few-layer graphene (FLG) samples with crystalline order was investigated experimentally by infrared absorption spectroscopy for photon energies ranging from 0.2 - 1 eV. Distinct optical conductivity spectra were…

材料科学 · 物理学 2015-05-18 Kin Fai Mak , Jie Shan , Tony F. Heinz

A striking feature of bilayer graphene is the induction of a significant band gap in the electronic states by the application of a perpendicular electric field. Thicker graphene layers are also highly attractive materials. The ability to…

介观与纳米尺度物理 · 物理学 2012-02-21 Chun Hung Lui , Zhiqiang Li , Kin Fai Mak , Emmanuele Cappelluti , Tony F. Heinz

In tetralayer graphene, three inequivalent layer stackings should exist, however, only rhombohedral (ABCA) and Bernal (ABAB) stacking have so far been observed. The three stacking sequences differ in their electronic structure, with the…

The ABC-stacked N-layer-graphene family of two-dimensional electron systems is described at low energies by two remarkably flat bands with Bloch states that have strongly momentum-dependent phase differences between carbon pi-orbital…

材料科学 · 物理学 2010-07-12 Fan Zhang , Bhagawan Sahu , Hongki Min , Allan H. MacDonald

Graphene layers are known to stack in two stable configurations, namely ABA or ABC stacking, with drastically distinct electronic properties. Unlike the ABA stacking, little has been done to experimentally investigate the electronic…

介观与纳米尺度物理 · 物理学 2017-03-31 Y. Henni , H. P. Ojeda Collado , K. Nogajewski , M. R. Molas , G. Usaj , C. A. Balseiro , M. Orlita , M. Potemski , C. Faugeras

The extrinsic stacking sequence based on intrinsic crystal symmetry in multilayer two-dimensional materials plays a significant role in determining their electronic and optical properties. Compared with Bernal-stacked (ABA) multilayer…

介观与纳米尺度物理 · 物理学 2024-08-20 Zuo Feng , Wenxuan Wang , Yilong You , Yifei Chen , Kenji Watanabe , Takashi Taniguchi , Chang Liu , Kaihui Liu , Xiaobo Lu

Stackings in graphene have a pivotal role in properties to be discussed in the future, as seen in the recently found superconductivity of twisted bilayer graphene. Beyond bilayer graphene, the stacking order of multilayer graphene can be…

介观与纳米尺度物理 · 物理学 2022-12-12 Raúl Guerrero-Avilés , Marta Pelc , Fabian Geisenhof , Thomas Weitz , Andrés Ayuela

Small-twist-angle bilayer graphene supports strongly correlated insulating states and superconductivity. Twisted few-layer graphene systems are likely to open up new directions for strong correlation physics in moir\'e superlattices. We…

材料科学 · 物理学 2019-07-30 Xiao Li , Fengcheng Wu , Allan H. MacDonald

The effect of different stacking order of graphene multilayers on the electric field induced band gap is investigated. We considered a positively charged top and a negatively charged back gate in order to independently tune the band gap and…

介观与纳米尺度物理 · 物理学 2015-05-18 A. A. Avetisyan , B. Partoens , F. M. Peeters

The growth, atomic structure, and electronic property of trilayer graphene (TLG) on Ru(0001) were studied by low temperature scanning tunneling microscopy and spectroscopy in combined with tight-binding approximation (TBA) calculations. TLG…

材料科学 · 物理学 2026-04-14 Yande Que , Wende Xiao , Hui Chen , Dongfei Wang , Shixuan Du , Hong-Jun Gao

Graphene, defined as a single atomic plane of graphite, is a semimetal with small overlap between the valence and the conduction bands. The stacking of graphene up to several atomic layers can produce diverse physical properties, depending…

材料科学 · 物理学 2019-02-08 Jiliang Zhang , Guangcun Shan

Crystal symmetry plays a central role in governing a wide range of fundamental physical phenomena. One example is the nonlinear optical second harmonic generation (SHG), which requires inversion symmetry breaking. Here we report a unique…

介观与纳米尺度物理 · 物理学 2019-11-27 Yuwei Shan , Yingguo Li , Di Huang , Qingjun Tong , Wang Yao , Wei-Tao Liu , Shiwei Wu

We study the electronic structure of multilayer graphenes with a mixture of Bernal and rhombohedral stacking and propose a general scheme to understand the electronic band structure of an arbitrary configuration. The system can be viewed as…

介观与纳米尺度物理 · 物理学 2015-06-12 Mikito Koshino , Edward McCann

Hexagonal boron nitride (hBN) is the supporting substrate of choice for two-dimensional material devices because it is atomically flat and chemically inert. However, due to the small size of mechanically exfoliated hBN flakes, electronic…

Few-layer graphene (FLG) has been predicted to exist in various crystallographic stacking sequences, which can strongly influence the electronic properties of FLG. We demonstrate an accurate and efficient method to characterize stacking…

材料科学 · 物理学 2011-02-01 Chun Hung Lui , Zhiqiang Li , Zheyuan Chen , Paul V. Klimov , Louis E. Brus , Tony F. Heinz

The crystal structure of a material plays an important role in determining its electronic properties. Changing from one crystal structure to another involves a phase transition which is usually controlled by a state variable such as…

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