相关论文: Pumping laser excited spins through MgO barriers
We have studied the effect of magnetic field on a non-stoichiometric Heusler alloy Ni$_{50}$Mn$_{35}$In$_{15}$ that undergoes a martensitic as well as a magnetic transition near room temperature. Temperature dependent magnetization…
The Seebeck coefficient (S) of a serially coupled quantum dot (SCQD) junction system is theoretically studied via a two-level Anderson model. A change of sign in S with respect to temperature is found, which arises from the competition…
We have studied the underlayer thickness and temperature dependences of the current induced effective field in CoFeB|MgO heterostructures with Ta based underlayers. The underlayer thickness at which the effective field saturates is found to…
The Seebeck and Peltier effects have been widely studied and used in various thermoelectric technologies, including thermal energy harvesting and solid-state heat pumps. However, basic and applied studies on the Thomson effect, another…
Using a quantum theory including spin-splitting effect in diluted magnetic semiconductors, we study the dependence of tunneling magnetoresistance (TMR) on barrier thickness, temperature and applied voltage in GaMnAs/GaAs/GaMnAs…
We report on the observation of the spin Seebeck effect in antiferromagnetic MnF$_2$. A device scale on-chip heater is deposited on a bilayer of Pt (4 nm)/MnF$_2$ (110) (30 nm) grown by molecular beam epitaxy on a MgF$_2$ (110) substrate.…
Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal by an ultrashort laser pulse is extremely important. We demonstrate…
We have studied the crossover between thermally assisted and pure quantum tunneling in single crystals of high spin (S=10) uniaxial single molecule magnet Mn12-acetate using micro-Hall effect magnetometry. Magnetic hysteresis experiments…
In the past few years the phenomenon of spin dependent tunneling (SDT) in magnetic tunnel junctions (MTJs) has aroused enormous interest and has developed into a vigorous field of research. The large tunneling magnetoresistance (TMR)…
Spinel MgAl2O4 and family oxides are emerging barrier materials useful for magnetic tunnel junctions (MTJs). We report large tunnel magnetoresistance (TMR) ratios up to 429% at room temperature (RT) and 1,034% at 10 K in a…
The spin Seebeck effect is a spin-motive force generated by a temperature gradient in a ferromagnet that can be detected via normal metal contacts through the inverse spin Hall effect [K. Uchida {\it et al.}, Nature {\bf 455}, 778-781…
Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy and small cell size below 10nm. Here we study perpendicular…
The atomic variations of electronic wavefunctions at the surface and electron scattering near a defect have been detected unprecedentedly by tracing thermoelectric voltages given a temperature bias [Cho et al., Nature Mater. 12, 913…
We studied the displacement of magnetic domains under temperature gradients in perpendicularly magnetized Ta/[Pt/Co$_{68}$B$_{32}$/Ir]$_{\times 10}$/Pt multilayer tracks with microfabricated Pt heaters/thermometers by magnetic force…
It has recently been proposed and experimentally demonstrated that it is possible to generate large thermoelectric effects in ferromagnet/superconductor structures due to a spin-dependent particle-hole asymmetry. Here, we theoretically show…
Finite temperature effects in electromagnetic transitions in nuclei contribute to many aspects of nuclear structure and astrophysically relevant nuclear reactions. While electric dipole transitions have already been extensively studied, the…
Magnetic Tunnel Junction (MTJ) based Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is poised to replace embedded Flash for advanced applications such as automotive microcontroller units. To achieve deeper technological…
Thin film trilayer junction of La$%_{0.67}$Sr$_{0.33}$MnO$_3$ - SrTiO$_3$ - La$_{0.67}$Sr$_{0.33}$MnO$_3$ shows a factor of 9.7 change in resistance, in a magnetic field around 100 Oe at 14K. The junction magnetoresistance is bias and…
Thermal switching by magnetic fields is one of the important functionalities in thermal management technologies. In low-temperature devices, superconducting states can be used as a magneto-thermal-switching (MTS) component, because carrier…
We demonstrate theoretically that the thermal Hall effect of magnons in collinear antiferromagnetic insulators is an indicator of magnetic and topological phase transitions in the magnon spectrum. The transversal heat current of magnons…