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The emergence of glassy behavior of electrons is investigated for systems close to the disorder and/or interaction-driven metal-insulator transitions. Our results indicate that Anderson localization effects strongly stabilize such glassy…

无序系统与神经网络 · 物理学 2009-11-07 V. Dobrosavljevic , D. Tanaskovic , A. A. Pastor

This study investigates the molecular beam epitaxial (MBE) growth of titanium nitride (TiN) thin films, achieving a high residual resistivity ratio (RRR) of 15.8. We observed a strong correlation between growth temperature and crystalline…

We report transport studies on (Bi,Sb)2Te3 topological insulator thin films with tunable electronic band structure. We find a doping and temperature regime in which the Hall coefficient is negative indicative of electron-type carriers,…

The relaxations of conductivity after a temporary change of carrier density n_s during the waiting time t_w have been studied in a strongly disordered two-dimensional electron system in Si. At low enough n_s < n_g (n_g - the glass…

强关联电子 · 物理学 2015-05-14 J. Jaroszynski , Dragana Popovic

We present a theoretical study of electronic and thermal transport in polycrystalline heterostructures combining graphene (G) and hexagonal boron nitride (hBN) grains of varying size and distribution. By increasing the hBN grain density…

介观与纳米尺度物理 · 物理学 2025-06-06 J. E. Barrios Vargas , B. Mortazavi , A. W. Cummings , R. Martinez-Gordillo , M. Pruneda , L. Colombo , T. Rabczuk , S. Roche

The electrons and phonons in metal films after ultra-short pulse laser heating are in highly non-equilibrium states not only between the electron sub-system and the phonon sub-system but also within the electron sub-system. An…

材料科学 · 物理学 2014-08-05 Jun Zhou , Nianbei Li , Ronggui Yang

We measured the complex conductivity, $\sigma$, of FeSe$_{1-x}$Te$_x$ ($x=0-0.5$) films in the superconducting state which show a drastic increase of the superconducting transition temperature, $T_\textrm{c}$, when the nematic order…

超导电性 · 物理学 2021-07-28 H. Kurokawa , S. Nakamura , J. Zhao , N. Shikama , Y. Sakishita , Y. Sun , F. Nabeshima , Y. Imai , H. Kitano , A. Maeda

Under irradiation of amorphous $As_{x}Se_{100-x}$ films by band-gap light, it was observed that lateral mass transport of the film material changed the direction of movement in the region (4 < x < 5 at%.) of topological structural…

材料科学 · 物理学 2018-05-11 M. L. Trunov , P. M. Lytvyn

The breaking of spatial inversion symmetry in condensed matter gives rise to intriguing physical properties, such as ferroelectricity, piezoelectricity, spin-momentum locking, and nonreciprocal responses. Here we propose that a…

Cluster-assembled metallic films show interesting electrical properties, both in the near-to-percolation regime, when deposited clusters do not form a complete layer yet, and when the film thickness is well above the electrical percolation…

介观与纳米尺度物理 · 物理学 2021-12-20 Miquel López-Suárez , Claudio Melis , Luciano Colombo , Walter Tarantino

We calculate the nonequilibrium conductance through a molecule or a quantum dot in which the occupation of the relevant electronic level is coupled with intensity $\lambda$ to a phonon mode, and also to two conducting leads. The system is…

强关联电子 · 物理学 2015-06-15 P. Roura-Bas , L. Tosi , A. A. Aligia

Electrolyte gating is a powerful technique for accumulating large carrier densities in surface two-dimensional electron systems (2DES). Yet this approach suffers from significant sources of disorder: electrochemical reactions can damage or…

Thermal transport by phonons in films with thicknesses of less than 10 nm is investigated in a soft system (Lennard-Jones argon) and a stiff system (Tersoff silicon) using two-dimensional lattice dynamics calculations and the Boltzmann…

介观与纳米尺度物理 · 物理学 2020-01-22 Bo Fu , Kevin D. Parrish , Hyun-Young Kim , Guihua Tang , Alan J. H. McGaughey

Optical spectroscopy was used to study the electrodynamics and hidden transport properties of a BaFe$_{1.91}$Ni$_{0.09}$As$_{2}$ thin superconducting film. We analyzed the normal state data using a Drude-Lorentz model with two Drude…

超导电性 · 物理学 2020-12-04 Yu. A. Aleshchenko , A. V. Muratov , G. A. Ummarino , S. Richter , A. Anna Thomas , R. Hühne

High-entropy perovskite thin films, as the prototypical representative of the high-entropy oxides with novel electrical and magnetic features, have recently attracted great attention. Here, we reported the electronic structure and charge…

材料科学 · 物理学 2021-04-08 Yuqi Liang , Bingcheng Luo , Huijuan Dong , Danyang Wang

We report the effect of germanium as n-type dopant on the electrical and optical properties of AlxGa1-xN layers grown by plasma assisted molecular-beam epitaxy. The Al content has been varied from x = 0 to 0.66, confirmed by Rutherford…

材料科学 · 物理学 2019-02-12 R. Blasco , A. Ajay , E. Robin , C. Bougerol , K. Lorentz , L. C. Alves , I. Mouton , L. Amichi , A. Grenier , E. Monroy

We study coherent quantum transport through a superconducting film connected to normal-metal electrodes. Simple expressions for the differential conductance and the local density of states are obtained in the clean limit and for transparent…

超导电性 · 物理学 2009-11-07 M. Bozovic , Z. Pajovic , Z. Radovic

We comparatively investigated the transport properties for S- and Te-substituted FeSe thin films under magnetic fields to clarify the origin of the contrasting behavior of the superconducting transition temperature in S and Te substitution.…

超导电性 · 物理学 2020-05-27 Fuyuki Nabeshima , Tomoya Ishikawa , Naoki Shikama , Atsutaka Maeda

We have systematically investigated the electrical transport properties of polycrystalline TaN$_x$ ($0.83$$\lesssim$$x$$\lesssim$1.32) films with rocksalt structure from 300 down to 2 K. It is found that the conductivity varies linearly…

介观与纳米尺度物理 · 物理学 2018-07-04 Ran Li , Xiu-Zhi Duan , Xin Zhu , Yang Yang , Ding-Bang Zhou , Zhi-Qing Li

We report low-temperature electronic transport measurements performed in two multi-terminal Corbino samples formed in GaAs/Al-GaAs two-dimensional electron gases (2DEG) with both ultra-high electron mobility ($\gtrsim 20\times 10^6$…