Aging and memory in a two-dimensional electron system in Si
Strongly Correlated Electrons
2015-05-14 v1 Disordered Systems and Neural Networks
Abstract
The relaxations of conductivity after a temporary change of carrier density n_s during the waiting time t_w have been studied in a strongly disordered two-dimensional electron system in Si. At low enough n_s < n_g (n_g - the glass transition density), the nonexponential relaxations exhibit aging and memory effects at low temperatures T. The aging properties change abruptly at the critical density for the metal-insulator transition n_c < n_g. The observed complex dynamics of the electronic transport is strikingly similar to that of other systems that are far from equilibrium.
Cite
@article{arxiv.0911.1343,
title = {Aging and memory in a two-dimensional electron system in Si},
author = {J. Jaroszynski and Dragana Popovic},
journal= {arXiv preprint arXiv:0911.1343},
year = {2015}
}
Comments
Proceedings of ECRYS-2008