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We study the electronic band structure in the K/K' valleys of the Brillouin zone of monolayer WSe2 and MoSe2 by optical reflection and photoluminescence spectroscopy on dual-gated field-effect devices. Our experiment reveals the distinct…

介观与纳米尺度物理 · 物理学 2017-02-21 Zefang Wang , Liang Zhao , Kin Fai Mak , Jie Shan

We report scanning tunneling microscopy (STM) and spectroscopy (STS) measurements of monolayer and bilayer WSe$_2$. We measure a band gap of 2.21 $\pm$ 0.08 eV in monolayer WSe$_2$, which is much larger than the energy of the…

介观与纳米尺度物理 · 物理学 2015-10-28 Matthew Yankowitz , Devin McKenzie , Brian J. LeRoy

The success of isolating small flakes of atomically thin layers through mechanical exfoliation has triggered enormous research interest in graphene and other two-dimensional materials. For device applications, however, controlled large-area…

材料科学 · 物理学 2014-07-17 Yingnan Liu , Rudresh Ghosh , Di Wu , Ariel Ismach , Rodney Ruoff , Keji Lai

The remarkable properties of (1T-)TiSe$_2$ among the transition metal dichalcogenides have attracted the attention of many researchers due to its peculiar behavior during the charge density wave (CDW) transition. Therefore, it is highly…

材料科学 · 物理学 2024-02-08 Shin-ichiro Tanaka , Shigemasa Suga , Keiji Ueno , Keisuke Fukutani , Fumihiko Matsui

The variation of the electronic structure normal to 1D defects in quasi-freestanding MoS$_2$, grown by molecular beam epitaxy, is investigated through high resolution scanning tunneling spectroscopy at $5$K. Strong upwards bending of…

Two-dimensional (2D) materials with puckered layer morphology are promising candidates for next-generation opto-electronics devices owing to their anisotropic response to external perturbations and wide band gap tunability with the number…

材料科学 · 物理学 2021-09-14 M. Cattelan , C. J. Sayers , D. Wolverson , E. Carpene

Atomically thin two-dimensional (2D) layered semiconductors such as transition metal dichalcogenides (TMDs) have attracted considerable attention due to their tunable band gap, intriguing spin-valley physics, piezoelectric effects and…

SrCuO2 has long been considered a near-archetypal realization of a quasi one dimensional (1D) system of interacting electrons with short-range interactions. Within this framework, experimental observations - interpreted through the lens of…

超导电性 · 物理学 2025-10-20 Dimitar Pashov , Casey Eichstaedt , Swagata Acharya , Mark van Schilfgaarde

Single spin defects in 2D transition-metal dichalcogenides are natural spin-photon interfaces for quantum applications. Here we report high-field magneto-photoluminescence spectroscopy from three emission lines (Q1, Q2 and Q*) of He-ion…

We study the conduction band spin splitting that arises in transition metal dichalcogenide (TMD) semiconductor monolayers such as MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$ due to the combination of spin-orbit coupling and lack of inversion…

材料科学 · 物理学 2014-01-01 K. Kośmider , J. W. González , J. Fernández-Rossier

The recent advances in angle resolved photoemission techniques allowed the unambiguous experimental confirmation of spin charge decoupling in quasi one dimensional (1D) Mott insulators. This opportunity stimulates a quantitative analysis of…

强关联电子 · 物理学 2015-05-14 Valeria Lante , Alberto Parola

The emergence of transition metal dichalcogenides (TMDs) as 2D electronic materials has stimulated proposals of novel electronic and photonic devices based on TMD heterostructures. Here we report the determination of band offsets in TMD…

Spins confined to atomically-thin semiconductors are being actively explored as quantum information carriers. In transition metal dichalcogenides (TMDCs), the hexagonal crystal lattice gives rise to an additional valley degree of freedom…

介观与纳米尺度物理 · 物理学 2023-06-29 Radha Krishnan , Sangram Biswas , Yu-Ling Hsueh , Hongyang Ma , Rajib Rahman , Bent Weber

Monolayers of semiconducting transition metal dichalcogenides are a strongly emergent platform for exploring quantum phenomena in condensed matter, building novel opto-electronic devices with enhanced functionalities. Due to their atomic…

Transition metal dichalcogenides have attracted much attention recently due to their potential applications in spintronics and photonics as a result of the indirect to direct band gap transition and the emergence of the spin-valley coupling…

We have investigated atomic and electronic structure of grain boundaries in monolayer MoS2, where relative angles between two different grains are 0 and 60 degree. The grain boundaries with specific relative angle have been formed with…

Moir\'e heterobilayers exhibiting spatially varying band alignment and electron and hole localization that can be precisely controlled through the twist angle have emerged as exciting platforms for studying complex quantum phenomena. While…

${\gamma}$-GeSe is a new type of layered bulk material that was recently successfully synthesized. By means of density functional theory first-principles calculations, we systematically studied the physical properties of two-dimensional…

材料科学 · 物理学 2023-07-05 Shuyi Shi , Kuan-Rong Hao , Xing-Yu Ma , Qing-Bo Yan , Gang Su

Typical Raman spectra of transition metal dichalcogenides (TMDs) display two prominent peaks, E2g and A1g, that are well separated from each other. We find that these modes are degenerate in bulk WSe2 yielding one single Raman peak. As the…

材料科学 · 物理学 2013-04-10 H. Sahin , S. Tongay , S. Horzum , W. Fan , J. Zhou , J. Li , J. Wu , F. M. Peeters

Combining monolayers of different two-dimensional (2D) semiconductors into heterostructures opens up a wealth of possibilities for novel electronic and optical functionalities. Exploiting them hinges on accurate measurements of the band…

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