相关论文: A thermodynamic theory of filamentary resistive sw…

The equilibrium ON and OFF states of resistive random access memory (RRAM) are due to formation and destruction of a conducting filament. The laws of thermodynamics dictate that these states correspond to the minimum of free energy. Here,…

Resistive Random Access Memories (RRAMs) are being studied by the industry and academia because it is widely accepted that they are promising candidates for the next generation of high density nonvolatile memories. Taking into account the…

Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but there still lacks a rational physical basis to be relied on to design scalable…

We present a theory of second phase conductive filaments in phase transformable systems; applications include threshold switches, phase change memory, and shunting in thin film structures. We show that the average filament parameters can be…

Memory has always been a building block element for information technology. Emerging technologies such as artificial intelligence, big data, the internet of things, etc., require a novel kind of memory technology that can be energy…

Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device…

We report on an experimental study of current induced switching in perpendicular magnetic random access memory (MRAM) cells with variable resistance-area products (RAs). Our results show that in addition to spin transfer torque (STT),…

Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching…

The necessity of having an electronic device working in relevant biological time scales with a small footprint boosted the research of a new class of emerging memories. Ag-based volatile resistive switching memories (RRAMs) feature a…

Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…

The growing energy demands of information and communication technologies, driven by data-intensive computing and the von Neumann bottleneck, underscore the need for energy-efficient alternatives. Resistive random-access memory (RRAM)…

The ramp-reversal memory (RRM) effect in metal-insulator transition metal oxides (TMOs), a non-volatile resistance change induced by repeated temperature cycling, has attracted considerable interest in neuromorphic computing and…

The morphological evolution of the conducting filament (CF) predominantly controls the electric response of the resistive random access memory (ReRAM) devices. However, the parameters -- in terms of the material and the processing -- which…

Resistance switching random access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND (NAND) flash memory. Such…

Resistive RAM (RRAM) devices are candidates for neuromorphic computing devices in which the functionality lies in the formation and reversible rupture and gap-closing of conducting filaments in insulating layers. To explore the thermal…

A critical issue affecting filamentary resistive random access memory (RRAM) cells is the requirement of high voltages during electroforming. Reducing the magnitude of these voltages is of significant interest, as it ensures compatibility…

Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of $HfO_x$-based conventional RRAM often yields only two stable…

We present atomistic simulations of conductive bridging random access memory (CBRAM) cells from first-principles combining density-functional theory and the Non-equilibrium Green's Function formalism. Realistic device structures with an…

A dynamic systems model is proposed describing memory resistors which include a filament conductive bridge. In this model the system state is defined by both a dynamic tunneling barrier (associated with the filament-electrode gap) and a…

Resistive random access memory (RRAM) is very well known for its potential application in in-memory and neural computing. However, they often have different types of device-to-device and cycle-to-cycle variability. This makes it harder to…