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Vanadium dioxide (VO2) exhibits a hysteretic insulator-to-metal transition near room temperature, forming the foundation for various forms of resistive switching devices. Usually, these are realized in the form of two-terminal bridge-like…

Electric current has been experimentally demonstrated to be able to drive the insulator-to-metal transition (IMT) in VO$_2$. The main mechanisms involved are believed to be the Joule heating effect and the strong electron-correlation…

材料科学 · 物理学 2019-02-04 Yin Shi , Long-Qing Chen

We discuss the emergence of a spontaneous temperature and critical current spatial modulation in current-carrying high temperature superconducting wire. The modulation of the critical current along the wire on a scale of 3 - 10 mm forces a…

超导电性 · 物理学 2015-05-13 G. A. Levin , P. N. Barnes , J. P. Rodriguez , J. A. Connors , J. S. Bulmer

Using fluorescent microthermal imaging we have investigated the origin of "two-step" behavior in I-V curves for a current-carrying YBa_2Cu_3O_x superconducting bridge. High resolution temperature maps reveal that as the applied current…

We have investigated the resistive response of high Tc thin films submitted to a high density of current. For this purpose, current pulses were applied into bridges made of Nd(1.15)Ba(1.85)Cu3O7 and Bi2Sr2CaCu2O8. By recording the time…

超导电性 · 物理学 2009-11-07 S. Reymond , L. Antognazza , M. Decroux , E. Koller , P. Reinert , O. Fischer

An electrical study of thin $VO_{2}$ films in the vicinity of the structural phase transition at $68^{0}C$ shows (a) that the electrical resistance $R$ follows $log (R)$ $\propto$ $-T$ over the $T$-range, $20 < T < 80 ^{0}C$ covering both…

介观与纳米尺度物理 · 物理学 2009-11-13 R. G. Mani , S. Ramanathan

The transition voltage of an abrupt metal-insulator transition (MIT), observed by applying an electric field to two-terminal devices fabricated on a Mott insulator VO_2 film, decreases with increasing temperature up to 334K. The abrupt…

强关联电子 · 物理学 2007-05-23 Hyun-Tak Kim , B. G. Chae , D. H. Youn , S. L. Maeng , K. Y. Kang

Strongly correlated insulators, such as Mott or charge-transfer insulators, exhibit a strong temperature dependence in their resistivity. Consequently, self-heating effects can lead to electrothermal instabilities in planar thin film…

Nonequilibrium systems driven by external energy sources host unexplored physics; yet phase transitions beyond thermal equilibrium remain elusive. Here, we demonstrate that electric current induces structural phase transitions in…

Vanadium dioxide (VO2) has drawn significant attention for its near room temperature insulator to metal transition and associated structural phase transition. The underlying Physics behind the temperature induced insulator to metal and…

材料科学 · 物理学 2023-04-19 S. R. Sahu , S. S. Majid , A. Ahad , A. Tripathy , K. Dey , S. Pal , B. K. De , Wen-Pin Hsieh , R. Rawat , V. G. Sathe , D. K. Shukla

The metal insulator transition of nano-scaled $VO_2$ devices is drastically different from the smooth transport curves generally reported. The temperature driven transition occurs through a series of resistance jumps ranging over 2 decades…

介观与纳米尺度物理 · 物理学 2008-10-31 Amos Sharoni , Juan Gabriel Ramírez , Ivan K. Schuller

Thin films of VO$_2$ on different substrates, Al$_2$O$_3$ and SiO$_2$/Si, have been prepared and characterized from room temperature up to 360 K. From the band structure in the rutile metallic phase and in the monoclinic insulating phase…

强关联电子 · 物理学 2016-09-21 Tobias Peterseim , Martin Dressel , Marc Dietrich , Angelika Polity

Ultrafast phase transitions induced by femtosecond light pulses present a new opportunity for manipulating the properties of materials. Understanding how these transient states are different from, or similar to, their thermal counterparts…

Resistive-switching -- the current-/voltage-induced electrical resistance change -- is at the core of memristive devices, which play an essential role in the emerging field of neuromorphic computing. This study is about resistive switching…

A system of two coplanar superconducting films seamlessly connected by a bridge is studied. We observe two distinct resistive transitions as the temperature is reduced. The first one, occurring in the films, shows some properties of the…

超导电性 · 物理学 2009-11-10 Sang L. Chu , A. T. Bollinger , A. Bezryadin

The temperature dependence of the Mott metal-insulator transition (MIT) is studied with a VO_2-based two-terminal device. When a constant voltage is applied to the device, an abrupt current jump is observed with temperature. With increasing…

强关联电子 · 物理学 2015-06-25 Bong-Jun Kim , Yong Wook Lee , Byung-Gyu Chae , Sun Jin Yun , Soo-Young Oh , Young-Sik Lim , Hyun-Tak Kim

The spectacular metal-to-insulator transition of V2O3 can be progressively suppressed in thin film samples. Evidence for phase separation was observed using microbridges as a mesoscopic probe of transport properties where the same film…

材料科学 · 物理学 2009-11-13 C. Grygiel , A. Pautrat , W. C. Sheets , W. Prellier , B. Mercey , L. Mechin

1T-TaS$_2$ exhibits several resistivity phases due to the modulation of charge density wave (CDW). The fact that such phase transition can be driven electrically has attracted a lot of attention in the recent past towards…

材料科学 · 物理学 2023-07-21 Mehak Mahajan , Kausik Majumdar

In this study, we performed highly resolved large-eddy simulations (LES) to investigate the influence of variable properties on the forced turbulent convection in a channel. The constant heat flux boundary condition permits wall temperature…

流体动力学 · 物理学 2023-01-11 Himani Garg , Lei Wang

To probe the quenching mechanisms under high current densities, current-voltage curves have been measured in YBa2Cu3O7-delta thin film microbridges with widths lower than the thermal diffusion length. This condition was obtained by using…

超导电性 · 物理学 2013-05-29 Mauricio Ruibal , Gonzalo Ferro , Manuel R. Osorio , Jesus Maza , Jose A. Veira , Felix Vidal
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