相关论文: Spin relaxation 1/f noise in graphene

We develop a two-channel resistor model for simulating spin transport with general applicability. Using this model, for the case of graphene as a prototypical material, we calculate the spin signal consistent with experimental values. Using…

We study the spin relaxation in a single-electron bilayer graphene quantum dot due to the spin-orbit coupling. The spin relaxation is assisted by the emission of acoustic phonons via the bond-length change and deformation potential…

Spin transport experiments in graphene, a single layer of carbon atoms, indicate spin relaxation times that are significantly shorter than the theoretical predictions. We investigate experimentally whether these short spin relaxation times…

The nature of the low-frequency current fluctuations, i.e. carrier number vs. mobility, defines the strategies for noise reduction in electronic devices. While the 1/f noise in metals has been attributed to the electron mobility…

Low-frequency noise with a spectral density that depends inversely on frequency (f) has been observed in a wide variety of systems including current fluctuations in resistors, intensity fluctuations in music and signals in human cognition.…

The elimination of extrinsic sources of spin relaxation is key in realizing the exceptional intrinsic spin transport performance of graphene. Towards this, we study charge and spin transport in bilayer graphene-based spin valve devices…

The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states has led to the observation of new electronic transport phenomena such as anomalously quantized…

We consider two mechanisms of spin relaxation in disordered graphene. i) Spin relaxation due to curvature spin orbit coupling caused by ripples. ii) Spin relaxation due to the interaction of the electronic spin with localized magnetic…

We performed spin transport measurements on boron nitride based single layer graphene devices with mobilities up to 40 000 cm${^2}$V$^{-1}$s$^{-1}$. We could observe spin transport over lengths up to 20 {\mu}m at room temperature, the…

A principal motivation to develop graphene for future devices has been its promise for quantum spintronics. Hyperfine and spin-orbit interactions are expected to be negligible in single-layer graphene. Spin transport experiments, on the…

Low frequency resistance variations due to mobility fluctuations is one of the key factors of $1/f$ noise in metallic conductors. According to theory, such noise in a two-dimensional (2D) device can be suppressed to zero at small magnetic…

Graphene is an attractive material for spintronics due to theoretical predictions of long spin lifetimes arising from low spin-orbit and hyperfine couplings. In experiments, however, spin lifetimes in single layer graphene (SLG) measured…

We study decoherence of an electron spin qubit in a quantum dot due to charge noise. We find that at the lowest order, the pure dephasing channel is suppressed for both $1/f$ charge noise and Johnson noise, so that charge noise leads to a…

First-principles calculations enable accurate predictions of electronic interactions and dynamics. However, computing the electron spin dynamics remains challenging. The spin-orbit interaction causes various dynamical phenomena that couple…

We measure spin transport in high mobility suspended graphene (\mu ~ 10^5 cm^2/Vs), obtaining a (spin) diffusion coefficient of 0.1 m^2/s and giving a lower bound on the spin relaxation time (\tau_s ~ 150 ps) and spin relaxation length…

We demonstrate graphene thickness-graded transistors with high electron mobility and low 1/f noise (f is a frequency). The device channel is implemented with few-layer graphene with the thickness varied from a single layer in the middle to…

Transport measurements on few layer graphene (FLG) are important as they interpolate between the properties of single layer graphene (SLG) as a true 2-dimensional material and the 3-dimensional bulk properties of graphite. In this article…

The unusual electronic properties of single-layer graphene make it a promising material system for fundamental advances in physics, and an attractive platform for new device technologies. Graphene's spin transport properties are expected to…

In this review we discuss spin and charge transport properties in graphene-based single-layer and few-layer spin-valve devices. We give an overview of challenges and recent advances in the field of device fabrication and discuss two of our…

The quantum indeterminacy caused by non-commutativity of observables at different times sets a lower bound on the voltage noise power spectrum in any conducting material. This bound is calculated explicitly in the case of monolayer…