相关论文: Power nano- and picosecond optoelectronic switches…

Energy efficiency of optoelectronic switches based on high-voltage silicon photodiodes, phototransistors or photothyristors and triggered-on by picosecond laser pulses has been studied for the first time. For given values of resistive load,…

An analytical theory of high voltage reverse-biased p+-n-n+-structures picosecond switching into conducting state by pulsed lighting has been developed and a numerical simulation of this process has been performed. Combining the results of…

Self-heating effects of picosecond optoelectronic switches based on vertical high-voltage structures with p-n-junctions (VPSS) operating in a high-frequency mode were theoretically studied for the first time. It is shown that strong…

A simple analytical theory of high-voltage overvolting p+-i-n+-structures picosecond switching into conducting state by pulsed lighting has been developed. Relationship between parameters of structure, light pulse, external circuit and the…

We describe an electro-optical switch based on a commercial electro-optic modulator (modified for high-speed operation) and a 340V pulser having a rise time of 2.2ns (at 250V). It can produce arbitrary pulse patterns with an average…

The efficiency of photo-conductive switches, which continue to be used for the generation and detection of THz waves, has been overlooked for a long time. The so far 'optics-dominated' devices are making their way through to new and…

We propose a time-dependent photonic structure, in which the carrier frequency of an optical pulse is shifted without changing its shape. The efficiency of the device takes advantage of slow group velocities of light attainable in periodic…

Achieving ultrafast all-optical switching in a silicon waveguide geometry is a key milestone on the way to an integrated platform capable of handling the increasing demands for higher speed and higher capacity for information transfer.…

Optically generated electron-hole plasma in high-index dielectric nanostructures was demonstrated as a means of tuning of their optical properties. However, until now an ultrafast operation regime of such plasma driven nanostructures has…

The interpretation of the electronic kinetic processes in the quantum zero dimensional nanostructures is considered. The main mechanism of the processes is supposed to be the interaction of electrons with the optical phonons. An emphasis is…

Reducing energy dissipation while increasing speed in computation and memory is a long-standing challenge for spintronics research. In the last 20 years, femtosecond lasers have emerged as a tool to control the magnetization in specific…

We utilize cross-phase modulation to observe all-optical switching in microring resonators fabricated with hydrogenated amorphous silicon (a-Si:H). Using 2.7-ps pulses from a mode-locked fiber laser in the telecom C-band, we observe optical…

The ability to control high-voltage actuator arrays relies, to date, on expensive microelectronic processes or on individual wiring of each actuator to a single off-chip high-voltage switch. Here we present an alternative approach that uses…

We have measured the critical phase change conditions induced by electrical pulses in Ge2Sb2Te5 nanopillar phase change memory devices by constructing a comprehensive resistance map as a function of pulse parameters (width, amplitude and…

Ultrafast all-optical logic devices based on nonlinear light-matter interactions hold the promise to overcome the speed limitations of conventional electronic devices. Strong coupling of excitons and photons inside an optical resonator…

Many advanced concepts for high-efficiency photovoltaic devices exploit the peculiar optoelectronic properties of semiconductor nanostructures such as quantum wells, wires and dots. While the optics of such devices is only modestly affected…

All optical switches offer advanced control over the properties of light at ultrafast timescales using optical pulses as both the signal and the control. Limited only by material response times, these switches can operate at terahertz…

Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as…

The paper presents new results in the field of super high-speed and multi-valued signal processing. Writting digital information into spatial structures (topological charts) of electromagnetic field pulses allows to use passive circuits for…

Vertical structures of SiO$_{2}$ sandwiched between a top tungsten electrode and conducting non-metal substrate were fabricated by dry and wet etching methods. Both structures exhibit similar voltage-controlled memory behaviors, in which…