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相关论文: Directional Interlayer Spin-Valley Transfer in Two…

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The interlayer coupling in van der Waals heterostructures governs a variety of optical and electronic properties. The intrinsic dipole moment of Janus transition metal dichalcogenides (TMDs) offers a simple and versatile approach to tune…

Two-dimensional crystals stack together through weak van der Waals (vdW) forces, offering unlimited possibilities to play with layer number, order and twist angle in vdW heterostructures (HSs). The realisation of high-performance…

Spintronics aims to exploit the spin degree of freedom in solid state devices for data storage and information processing technologies. The fundamental spintronic device concepts such as creation, manipulation and detection of spin…

介观与纳米尺度物理 · 物理学 2016-10-21 André Dankert , Saroj P. Dash

Stacking monolayer semiconductors into heterostructures allows for control of their optical and electronic properties, offering advantages for nanoscale electronics, optoelectronics, and photonics. Specifically, adding a thin spacer between…

介观与纳米尺度物理 · 物理学 2025-09-15 Sara A. Elrafei , Tom T. C. Sistermans , Alberto G. Curto

Two-dimensional van der Waals heterostructures are potential game changers both in understanding the fundamental physics and in the realization of various devices that exploit magnetism at the nanoscale. Multiferroic heterostructures…

材料科学 · 物理学 2024-12-12 Himangshu Sekhar Sarma , Subhradip Ghosh

Manipulation of spin and valley degrees of freedom is a key step towards realizing novel quantum technologies, for which atomically thin transition metal dichalcogenides (TMDCs) have been established as promising candidates. In monolayer…

Van der Waals heterostructures made of graphene and transition metal dichalcogenides (TMD) are an emerging platform for opto-electronic, -spintronic and -valleytronic devices that could benefit from (i) strong light-matter interactions and…

For the past few years, 2D ferroelectric materials have attracted strong interest for their potential in future nanoelectronics devices. The recent discovery of 2D ferroelectricity in twisted layers of insulating hexagonal boron nitride,…

Van der Waals semiconductor heterostructures could be a platform to harness hot photoexcited carriers in the next generation of optoelectronic and photovoltaic devices. The internal quantum efficiency of hot-carrier devices is determined by…

介观与纳米尺度物理 · 物理学 2020-10-14 Dinesh Yadav , Maxim Trushin , Fabian Pauly

Van der Waals heterostructures give access to a wide variety of new phenomena that emerge thanks to the combination of properties brought in by the constituent layered materials. We show here that owing to an enhanced interaction cross…

van der Waals (vdW) heterojunctions formed by two-dimensional (2D) materials have attracted tremendous attention due to their excellent electrical/optical properties and device applications. However, current 2D heterojunctions are largely…

In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides…

The science and applications of electronics and optoelectronics have been driven for decades by progress in growth of semiconducting heterostructures. Many applications in the infrared and terahertz frequency range exploit transitions…

Vertical and lateral heterostructures of van der Waals materials provide tremendous flexibility for band structure engineering. Since electronic bands are sensitively affected by defects, strain, and interlayer coupling, the edge and…

We investigate the excitonic species in WS$_{2}$ monolayers transferred onto III-V semiconductor substrates with different surface treatments. When the III-V substrates were covered with amorphous native oxides, negatively charged excitons…

Van der Waals heterostructures formed by stacking of various two-dimensional materials are promising in electronic applications. However, the performances of most reported electronic devices based on van der Waals heterostructures are far…

介观与纳米尺度物理 · 物理学 2019-04-04 Wei Li , Xiang Xiao , Huilong Xu

Stacking atomic monolayers of semiconducting transition metal dichalcogenides (TMDs) has emerged as an effective way to engineer their properties. In principle, the staggered band alignment of TMD heterostructures should result in the…

We investigate the electronic transport property of lateral heterojunctions of semiconducting and metallic transition-metal dichalcogenide monolayers, MoSe$_2$ and NbSe$_2$, respectively. We calculate the electronic transmission probability…

介观与纳米尺度物理 · 物理学 2019-09-26 Tetsuro Habe

Van der Waals materials enable the construction of atomically sharp interfaces between compounds with distinct crystal and electronic properties. This is dramatically exploited in moir\'e systems, where a lattice mismatch or twist between…

Quantum confinement has made it possible to detect and manipulate single-electron charge and spin states. The recent focus on two-dimensional (2D) materials has attracted significant interests on possible applications to quantum devices,…